InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy

2002 ◽  
Vol 80 (4) ◽  
pp. 535-537 ◽  
Author(s):  
Nien-Tze Yeh ◽  
Wei-Sheng Liu ◽  
Shu-Han Chen ◽  
Pe-Chin Chiu ◽  
Jen-Inn Chyi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Quantum Dot Lasers ◽  
Cladding Layer ◽  
Gaas Quantum Dot

InAs/GaAs quantum dot lasers with GaP strain-compensation layers grown by molecular beam epitaxy

2016 ◽  
Vol 213 (4) ◽  
pp. 958-964 ◽  
Author(s):  
Takeo Kageyama ◽  
Katsuyuki Watanabe ◽  
Quoc Huy Vo ◽  
Keizo Takemasa ◽  
Mitsuru Sugawara ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Quantum Dot Lasers ◽  
Strain Compensation ◽  
Gaas Quantum Dot

1.3μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy

2001 ◽  
Vol 227-228 ◽  
pp. 1155-1161 ◽  
Author(s):  
V.M Ustinov ◽  
A.E Zhukov ◽  
N.A Maleev ◽  
A.R Kovsh ◽  
S.S Mikhrin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Quantum Dot Lasers ◽  
Gaas Quantum Dot

InAs/GaAs quantum dot lasers grown by gas-source molecular-beam epitaxy

2010 ◽  
Vol 312 (23) ◽  
pp. 3451-3454 ◽  
Author(s):  
H.D. Yang ◽  
Q. Gong ◽  
S.G. Li ◽  
C.F. Cao ◽  
C.F. Xu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Quantum Dot Lasers ◽  
Gas Source ◽  
Gaas Quantum Dot

Carrier Dynamics in Self-Assembled InAs QD Laser Structures and Broad-Area InAs QD Lasers Grown by Molecular Beam Epitaxy

2014 ◽  
Vol 1635 ◽  
pp. 43-48 ◽  
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
William Lotshaw ◽  
Steven C. Moss
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
High Power ◽  
Molecular Beam ◽  
Carrier Dynamics ◽  
Quantum Dot Lasers ◽  
Broad Area ◽  
Time Resolved ◽  
Quantum Dot Laser ◽  
Gaas Quantum Dot

ABSTRACTWe investigated carrier dynamics in both proton-irradiated InAs-GaAs quantum dot laser structures and in high power broad-area InAs-GaAs quantum dot lasers with windowed n-contacts using time-resolved PL (TR-PL) techniques.

High Characteristic Temperature 1.3 μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy

2010 ◽  
Vol 27 (2) ◽  
pp. 027801 ◽  
Author(s):  
Ji Hai-Ming ◽  
Yang Tao ◽  
Cao Yu-Lian ◽  
Xu Peng-Fei ◽  
Gu Yong-Xian ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Characteristic Temperature ◽  
Quantum Dot Lasers ◽  
Gaas Quantum Dot

Room-Temperature Operation of In0.5Ga0.5As Quantum Dot Lasers Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy

1999 ◽  
Vol 38 (Part 1, No. 1B) ◽  
pp. 605-607 ◽  
Author(s):  
Tzer-En Nee ◽  
Nien-Tze Yeh ◽  
Po-Wen Shiao ◽  
Jen-Inn Chyi ◽  
Ching-Ting Lee
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Room Temperature ◽  
Molecular Beam ◽  
Quantum Dot Lasers ◽  
Gaas Substrates ◽  
Room Temperature Operation
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