Electrical transport properties of NiSi2 layers synthesized by metal vapor vacuum-arc ion implantation: Temperature dependence and two-band model

2002 ◽  
Vol 80 (2) ◽  
pp. 249-251 ◽  
Author(s):  
X. W. Zhang ◽  
S. P. Wong ◽  
W. Y. Cheung ◽  
F. Zhang
Keyword(s):  
Ion Implantation ◽  
Temperature Dependence ◽  
Transport Properties ◽  
Electrical Transport ◽  
Metal Vapor ◽  
Vacuum Arc ◽  
Band Model ◽  
Electrical Transport Properties ◽  
Implantation Temperature ◽  
Two Band Model

Formation and Electrical Transport Properties of Nickel Silicide Synthesized by Metal Vapor Vacuum Arc Ion Implantation

2000 ◽  
Vol 611 ◽  
Author(s):  
X. W. Zhang ◽  
S. P. Wong ◽  
W. Y. Cheung ◽  
F. Zhang
Keyword(s):  
Ion Implantation ◽  
Transport Properties ◽  
Electrical Transport ◽  
Metal Vapor ◽  
Nickel Silicide ◽  
Ion Source ◽  
Vacuum Arc ◽  
Band Model ◽  
Electrical Transport Properties ◽  
Nickel Ion

ABSTRACTNickel disilicide layers were prepared by nickel ion implantation into silicon substrates using a metal vapor vacuum arc ion source at various beam current densities to an ion dose of 6×1017 cm−2. Characterization of the as-implanted and annealed samples was performed using Rutherford backscattering spectrometry, x-ray diffraction, electrical resistivity and Hall effect measurements. The temperature dependence of the sheet resistivity and the Hall mobility from 30 to 400 K showed peculiar peak and valley features varying from sample to sample. A two-band model was proposed to explain the observed electrical transport properties.

Temperature dependence of electrical transport properties of La4BaCu5−xCoxO13+δconducting oxide thin films

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EJ08
Author(s):  
Akihiro Tsuruta ◽  
Yusuke Tsujioka ◽  
Yutaka Yoshida ◽  
Ichiro Terasaki ◽  
Norimitsu Murayama ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Transport Properties ◽  
Electrical Transport ◽  
Oxide Thin Films ◽  
Electrical Transport Properties

Temperature dependence of electrical transport properties ofn‐type solar grade polycrystalline silicon

1983 ◽  
Vol 54 (7) ◽  
pp. 3913-3920 ◽  
Author(s):  
P. C. Mathur ◽  
R. P. Sharma ◽  
Renuka Shrivastava ◽  
P. Saxena ◽  
R. K. Kotnala
Keyword(s):  
Temperature Dependence ◽  
Transport Properties ◽  
Electrical Transport ◽  
Polycrystalline Silicon ◽  
Electrical Transport Properties

The Thermal and Electrical Transport Properties of Carbon Micro-Coil

2011 ◽  
Vol 239-242 ◽  
pp. 972-975 ◽  
Author(s):  
Fa Yu Wu ◽  
Yi Yong Wang ◽  
Jun Wei Zhang ◽  
Zhi Ying Wang ◽  
Yan Wen Zhou
Keyword(s):  
Temperature Dependence ◽  
Transport Properties ◽  
Electrical Transport ◽  
Industrial Design ◽  
Electrical Transport Properties ◽  
Load Bearing ◽  
High Efficient

The thermal and electrical transport properties of carbon micro-coils under the condition of common use were measured and discussed. The temperature-dependence, the load-bearing stability, the explicit and implicit values of those properties were brought forward to provide the references for their reliable industrial design and high efficient service.

Transport Properties of NbSe2

1974 ◽  
Vol 52 (10) ◽  
pp. 861-867 ◽  
Author(s):  
D. J. Huntley ◽  
R. F. Frindt
Keyword(s):  
Large Deviations ◽  
Phase Change ◽  
Temperature Dependence ◽  
Transport Properties ◽  
Thermoelectric Power ◽  
Hall Coefficient ◽  
Band Model ◽  
Crystal Orientations ◽  
Two Band Model

The Hall coefficient, magnetoresistance, and thermoelectric power of several specimens of NbSe2 have been measured as a function of temperature for various crystal orientations. A range of behaviour of the Hall coefficient has been observed varying from a reversal at 27 K for the purest specimen to no temperature dependence for the most impure. The magnetoresistance shows large deviations from Kohler's rule which are correlated with the Hall reversal. The results are discussed in terms of a possible phase change or a two-band model.

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