Direct measurement of piezoelectric field in In[sub 0.23]Ga[sub 0.77]N/GaN multiple quantum wells by electrotransmission spectroscopy

2002 ◽  
Vol 91 (1) ◽  
pp. 531 ◽  
Author(s):  
C. Y. Lai ◽  
T. M. Hsu ◽  
W.-H. Chang ◽  
K.-U. Tseng ◽  
C.-M. Lee ◽  
...  
2001 ◽  
Vol 78 (7) ◽  
pp. 928-930 ◽  
Author(s):  
Yin-Chieh Huang ◽  
Jian-Chin Liang ◽  
Chi-Kuang Sun ◽  
Amber Abare ◽  
Steven P. DenBaars

2010 ◽  
Vol 31 (8) ◽  
pp. 842-844 ◽  
Author(s):  
Sang-Mook Kim ◽  
Hwa Sub Oh ◽  
Jong Hyeob Baek ◽  
Kwang-Ho Lee ◽  
Gun Young Jung ◽  
...  

1998 ◽  
Vol 537 ◽  
Author(s):  
H. S. Kim ◽  
Y. Lin ◽  
H. X. Jiang ◽  
W. W. Chow ◽  
A. Botchkarev ◽  
...  

AbstractPiezoelectric effects in GaN/AlGaN multiple quantum wells (MQWs) have been directly probed by picosecond time-resolved photoluminescence (PL) spectroscopy. The time-resolved PL spectra of the 40 Å well MQWs reveal that the PL transition peak position is in fact blueshifted at early delay times due to the collective effects of quantum confinement of carriers, piezoelectric field, and Coulomb screening. However, the spectral peak position shifts toward lower energies as the delay time increases and becomes redshifted at longer delay times. By comparing experimental and calculation results, we have obtained a low limit of the piezoelectric field strength to be about 560 kV/cm in the 40 Å well GaN/Al0.15Ga0.85N MQWs.


1999 ◽  
Vol 4 (S1) ◽  
pp. 130-135
Author(s):  
H. S. Kim ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
W. W. Chow ◽  
A. Botchkarev ◽  
...  

Piezoelectric effects in GaN/AlGaN multiple quantum wells (MQWs) have been directly probed by picosecond time-resolved photoluminescence (PL) spectroscopy. The time-resolved PL spectra of the 40 Å well MQWs reveal that the PL transition peak position is in fact blueshifted at early delay times due to the collective effects of quantum confinement of carriers, piezoelectric field, and Coulomb screening. However, the spectral peak position shifts toward lower energies as the delay time increases and becomes redshifted at longer delay times. By comparing experimental and calculation results, we have obtained a low limit of the piezoelectric field strength to be about 560 kV/cm in the 40 Å well GaN/Al0.15Ga0.85N MQWs.


1996 ◽  
Vol 19 (1) ◽  
pp. 39-45 ◽  
Author(s):  
Alex Harwit ◽  
R. Fernandez ◽  
W.D. Eades ◽  
D.K. Kinell ◽  
R.L. Whitney

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