Catalyzed growth of carbon nanoparticles by microwave plasma chemical vapor deposition and their field emission properties

2002 ◽  
Vol 91 (1) ◽  
pp. 433 ◽  
Author(s):  
J. Yu ◽  
J. Ahn ◽  
Q. Zhang ◽  
S. F. Yoon ◽  
Rusli ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Field Emission ◽  
Vapor Deposition ◽  
Carbon Nanoparticles ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Emission Properties ◽  
Plasma Chemical Vapor Deposition ◽  
Field Emission Properties

scholarly journals The Field Emission Properties of Graphene Aggregates Films Deposited on Fe-Cr-Ni alloy Substrates

2010 ◽  
Vol 2010 ◽  
pp. 1-4 ◽  
Author(s):  
Zhanling Lu ◽  
Wanjie Wang ◽  
Xiaotian Ma ◽  
Ning Yao ◽  
Lan Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Field Emission ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Raman Scattering Spectroscopy ◽  
Emission Properties ◽  
Plasma Chemical Vapor Deposition ◽  
Field Emission Properties ◽  
Ni Alloy

The graphene aggregates films were fabricated directly on Fe-Cr-Ni alloy substrates by microwave plasma chemical vapor deposition system (MPCVD). The source gas was a mixture of and with flow rates of 100 sccm and 12 sccm, respectively. The micro- and nanostructures of the samples were characterized by Raman scattering spectroscopy, field emission scanning electron microscopy (SEM), and transparent electron microscopy (TEM). The field emission properties of the films were measured using a diode structure in a vacuum chamber. The turn-on field was about 1.0 V/m. The current density of 2.1 mA/ at electric field of 2.4 V/m was obtained.

Field Emission Properties of Nanocrystalline and Amorphous Silicon Carbon Nitride Prepared from Microwave Plasma Chemical Vapor Deposition

2005 ◽  
Vol 480-481 ◽  
pp. 65-70 ◽  
Author(s):  
Wen Juan Cheng ◽  
Jin Chun Jiang ◽  
Yang Zhang ◽  
De Zhong Shen ◽  
He Sun Zhu
Keyword(s):  
Chemical Vapor Deposition ◽  
Field Emission ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Carbon Nitride ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Silicon Carbon

Silicon carbon nitride (SiCN) films have been deposited on silicon wafers by microwave plasma chemical vapor deposition (MPCVD). Gas mixture of H2, CH4, N2, and SiH4 was used as precursors, in which the flow rate of N2 was changed. X-ray photoelectron spectroscopy (XPS) and micro-Raman spectroscopy were employed to characterize the composition and bonding structures, while field-emission scanning electron microscopy were used to investigate the microstructure of the films. With increasing the flow rate of N2 from 50 sccm to 300 sccm, the SiCN films changed from amorphous to nanocrystalline. Characteristic current-voltage measurements indicate a low turn-on field of 10.8 V/µm. Field emission current density of 4.5 mA/cm2 has been observed at 20 V/µm.

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