Electron-beam enhancement of ion charge state fractions in the metal-vapor vacuum-arc ion source

2001 ◽  
Vol 79 (7) ◽  
pp. 919-921 ◽  
Author(s):  
Alexey Bugaev ◽  
Vasily Gushenets ◽  
George Yushkov ◽  
Efim Oks ◽  
Timur Kulevoy ◽  
...  
Keyword(s):  
Electron Beam ◽  
Charge State ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc

Electron-beam enhancement of the metal vapor vacuum arc ion source

2002 ◽  
Vol 92 (5) ◽  
pp. 2884-2889 ◽  
Author(s):  
V. A. Batalin ◽  
A. S. Bugaev ◽  
V. I. Gushenets ◽  
A. Hershcovitch ◽  
B. M. Johnson ◽  
...  
Keyword(s):  
Electron Beam ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc

scholarly journals Charge state distribution studies of the metal vapor vacuum arc ion source

1990 ◽  
Vol 61 (1) ◽  
pp. 583-585 ◽  
Author(s):  
James E. Galvin ◽  
Ian. G. Brown ◽  
Robert A. MacGill
Keyword(s):  
Charge State ◽  
Charge State Distribution ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
State Distribution ◽  
Distribution Studies

scholarly journals Two approaches to electron beam enhancement of the metal vapor vacuum arc ion source

2003 ◽  
Vol 21 (1) ◽  
pp. 103-108
Author(s):  
B.M. JOHNSON ◽  
A. HERSHCOVITCH ◽  
A.S. BUGAEV ◽  
V.I. GUSHENETS ◽  
E.M. OKS ◽  
...  
Keyword(s):  
Electron Beam ◽  
National Laboratory ◽  
Metal Vapor ◽  
Brookhaven National Laboratory ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Current Electronics ◽  
Experimental Physics ◽  
Internal Electron ◽  
Charge States

Conclusive demonstration of electron-beam enhancement of ion charge states for the Metal Vapor Vacuum Arc (MEVVA) ion source was recently achieved using an external electron beam (E-MEVVA) in experiments performed jointly among the Institute for Theoretical and Experimental Physics (ITEP), Moscow, Russia, the High Current Electronics Institute (HCEI), Tomsk, Russia, and Brookhaven National Laboratory (BNL), USA. The E-MEVVA experiments were performed in Moscow and Tomsk with nearly the same design of ion sources. Results for lead and bismuth cathodes yielded maximum ion charge states of Pb7+ and Bi8+ for E-MEVVA, as compared to Pb2+ and Bi2+ for conventional MEVVA operation. Additional encouraging results were also obtained using a Z-discharge to produce an internal electron-beam (Z-MEVVA and LIZ-MEV).

Low jitter metal vapor vacuum arc ion source for electron beam ion trap injections

2005 ◽  
Vol 76 (7) ◽  
pp. 073304 ◽  
Author(s):  
Glenn E. Holland ◽  
Craig N. Boyer ◽  
John F. Seely ◽  
J. N. Tan ◽  
J. M. Pomeroy ◽  
...  
Keyword(s):  
Electron Beam ◽  
Ion Trap ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
Electron Beam Ion Trap ◽  
Low Jitter

Performance of a high‐current metal vapor vacuum arc ion source

1990 ◽  
Vol 61 (12) ◽  
pp. 3775-3782 ◽  
Author(s):  
Hiroshi Shiraishi ◽  
Ian G. Brown
Keyword(s):  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Current

Study on the Dopedβ-FeSi 2 Obtained by Metal Vapor Vacuum Arc Ion Source Implantation and Post-Annealing

2002 ◽  
Vol 730 ◽  
Author(s):  
Shuangbao Wang ◽  
Hong Liang ◽  
Peiran Zhu
Keyword(s):  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
Post Annealing ◽  
Strong Current ◽  
Xrd Patterns ◽  
Fe Ions

Abstractβ-FeSi2 was firstly formed by implanting Si wafers with Fe ions at 50 kV to a dose of 5×1017/cm2in a strong current Metal Vapor Vacuum Arc (MEVVA) implanter. Secondly, Ti implantation was performed on these Fe as-implanted samples. The Fe + Ti implanted samples were furnace annealed in vacuum at temperatures ranging from 650 to 975°C. The XRD patterns of the annealed samples correspond to β-FeSi2 structure (namely β-Fe(Ti)Si2). When annealing was done above 1050°C, the β-Fe(Ti)Si2 transformed into α-Fe(Ti)Si2. This implies that introducing Ti stabilizes the β-FeSi2 phase. Resistance measurements were also performed.

scholarly journals Formation of Buried Epitaxial Si-Ge Alloy Layers in Si Crystal by High Dose Ge ION Implantation

1991 ◽  
Vol 235 ◽  
Author(s):  
Kin Man Yu ◽  
Ian G. Brown ◽  
Seongil Im
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Lattice Mismatch ◽  
Solid Phase ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Ion Channeling

ABSTRACTWe have synthesized single crystal Si1−xGex alloy layers in Si <100> crystals by high dose Ge ion implantation and solid phase epitaxy. The implantation was performed using the metal vapor vacuum arc (Mevva) ion source. Ge ions at mean energies of 70 and 100 keV and with doses ranging from 1×1016 to to 7×1016 ions/cm2 were implanted into Si <100> crystals at room temperature, resulting in the formation of Si1−xGex alloy layers with peak Ge concentrations of 4 to 13 atomic %. Epitaxial regrowth of the amorphous layers was initiated by thermal annealing at temperatures higher than 500°C. The solid phase epitaxy process, the crystal quality, microstructures, interface morphology and defect structures were characterized by ion channeling and transmission electron microscopy. Compositionally graded single crystal Si1−xGex layers with full width at half maximum ∼100nm were formed under a ∼30nm Si layer after annealing at 600°C for 15 min. A high density of defects was found in the layers as well as in the substrate Si just below the original amorphous/crystalline interface. The concentration of these defects was significantly reduced after annealing at 900°C. The kinetics of the regrowth process, the crystalline quality of the alloy layers, the annealing characteristics of the defects, and the strains due to the lattice mismatch between the alloy and the substrate are discussed.

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