Optical and electrical properties of Al1−xInxN films grown by plasma source molecular-beam epitaxy

2001 ◽  
Vol 79 (5) ◽  
pp. 632-634 ◽  
Author(s):  
M. J. Lukitsch ◽  
Y. V. Danylyuk ◽  
V. M. Naik ◽  
C. Huang ◽  
G. W. Auner ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Plasma Source ◽  
Optical And Electrical Properties

scholarly journals Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy

2018 ◽  
Vol 123 (19) ◽  
pp. 195301 ◽  
Author(s):  
Melanie Budde ◽  
Carsten Tschammer ◽  
Philipp Franz ◽  
Johannes Feldl ◽  
Manfred Ramsteiner ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical And Electrical Properties

Optical and electrical properties of rare earth (Yb,Er) doped GaAs grown by molecular beam epitaxy

1994 ◽  
Vol 75 (8) ◽  
pp. 4171-4175 ◽  
Author(s):  
D. Seghier ◽  
T. Benyattou ◽  
A. Kalboussi ◽  
S. Moneger ◽  
G. Marrakchi ◽  
...  
Keyword(s):  
Rare Earth ◽  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical And Electrical Properties ◽  
Er Doped

Molecular-beam epitaxy-grown Si whisker structures: morphological, optical and electrical properties

2008 ◽  
Vol 19 (22) ◽  
pp. 225708 ◽  
Author(s):  
O V Naumova ◽  
Yu V Nastaushev ◽  
S N Svitasheva ◽  
L V Sokolov ◽  
N D Zakharov ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical And Electrical Properties

Properties of Modulation-Doped HgCdTe Superlattices

1989 ◽  
Vol 161 ◽  
Author(s):  
S. Hwang ◽  
Z. Yang ◽  
Y. Lansari ◽  
J.W. Han ◽  
J.W. Cook ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Optical And Electrical Properties ◽  
Mbe Growth ◽  
Quantum Well Structures ◽  
P Type ◽  
Growth Experiments

ABSTRACTPhotoassisted molecular beam epitaxy has been employed to successfully prepare p-type and n-type modulation-doped HgCdTe superlattices. The samples were grown at 170°C. In this paper, we report details of the MBE growth experiments and describe the optical and electrical properties that these new multilayered quantum well structures of HgCdTe possess.

As4to Ga flux ratio dependence of the optical and electrical properties of Ge‐doped GaAs grown by molecular‐beam epitaxy

1989 ◽  
Vol 65 (1) ◽  
pp. 248-251 ◽  
Author(s):  
Yunosuke Makita ◽  
Hideki Tanaka ◽  
Masahiko Mori ◽  
Nobukazu Ohnishi ◽  
Paul Phelan ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Optical And Electrical Properties ◽  
Ratio Dependence
Sign in / Sign up

Export Citation Format

Share Document