Room-temperature visible electroluminescence of Al-doped silicon oxide films

2001 ◽  
Vol 78 (26) ◽  
pp. 4121-4123 ◽  
Author(s):  
X. M. Wu ◽  
Y. M. Dong ◽  
L. J. Zhuge ◽  
C. N. Ye ◽  
N. Y. Tang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Doped Silicon

Thermally Stable Carbon-Doped Silicon Oxide Films Deposited at Room Temperature

2006 ◽  
Author(s):  
Keisuke Yamaoka ◽  
Hideaki Kato ◽  
Daisuke Tsukiyama ◽  
Yuji Yoshizako ◽  
Yoshikazu Terai ◽  
...  
Keyword(s):  
Room Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Thermally Stable ◽  
Stable Carbon ◽  
Carbon Doped ◽  
Doped Silicon

Long Luminescence Lifetime of 1.54 μ m Er3+ Luminescence from Erbium Doped Silicon Rich Silicon Oxide and its Origin

1998 ◽  
Vol 536 ◽  
Author(s):  
Se-Young Seo ◽  
Jung H. Shin ◽  
Choochon Lee
Keyword(s):  
Room Temperature ◽  
Radiative Decay ◽  
Silicon Oxide ◽  
Silicon Nanoclusters ◽  
Excitation Rate ◽  
Carrier Recombination ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Almost All ◽  
Er Doped

AbstractThe photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated. The silicon content of SRSO was varied from 43 to 33 at. % and Er concentration was 0.4–0.7 at. % in all cases. We observe strong 1.54 μ m luminescence due to 4I13/2⇒4I15/2 Er3+ 4f transition, excited via energy transfer from carrier recombination in silicon nanoclusters to Er 4f shells. The luminescent lifetimes at the room temperature are found to be 4–7 msec, which is longer than that reported from Er in any semiconducting host material, and comparable to that of Er doped SiO2 and A12O3. The dependence of the Er3+ luminescent intensities and lifetimes on temperature, pump power and on background illumination shows that by using SRSO, almost all non-radiative decay paths of excited Er3+ can be effectively suppressed, and that such suppression is more important than increasing excitation rate of Er3+. A planar waveguide using Er doped SRSO is also demonstrated.

Er3+Photoluminescence from Er-doped Silicon-Rich Silicon Oxide Films Deposited by Laser Ablation of a Si:Er Target in an Oxygen Atmosphere

2004 ◽  
Vol 43 (4A) ◽  
pp. 1541-1544 ◽  
Author(s):  
Jeong Sook Ha ◽  
Young Rae Jang ◽  
Keon Ho Yoo ◽  
Chang Hyun Bae ◽  
Sang Hwan Nam ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Oxygen Atmosphere ◽  
Doped Silicon ◽  
Er Doped

Investigation of silicon oxide films prepared by room-temperature ion plating

1998 ◽  
Vol 83 (2) ◽  
pp. 1107-1113 ◽  
Author(s):  
Ching-Fa Yeh ◽  
Tai-Ju Chen ◽  
Ching-Lin Fan ◽  
Jiann-Shiun Kao
Keyword(s):  
Room Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Ion Plating

Light Emission from Intrinsic and Doped Silicon-Rich Silicon Oxide: from the Visible to 1.6 ΜM

1996 ◽  
Vol 452 ◽  
Author(s):  
L. Tsybeskov ◽  
K. L. Moore ◽  
P. M. Fauchet ◽  
D. G. Hall
Keyword(s):  
Rare Earth ◽  
External Quantum Efficiency ◽  
Room Temperature ◽  
Structural Modification ◽  
Silicon Oxide ◽  
Light Emission ◽  
Crystalline Silicon ◽  
Light Emitting ◽  
Infra Red ◽  
Doped Silicon

AbstractSilicon-rich silicon oxide (SRSO) films were prepared by thermal oxidation (700°C-950°C) of electrochemically etched crystalline silicon (c-Si). The annealing-oxidation conditions are responsible for the chemical and structural modification of SRSO as well as for the intrinsic light-emission in the visible and near infra-red spectral regions (2.0–1.8 eV, 1.6 eV and 1.1 eV). The extrinsic photoluminescence (PL) is produced by doping (via electroplating or ion implantation) with rare-earth (R-E) ions (Nd at 1.06 μm, Er at 1.5 μm) and chalcogens (S at ∼1.6 μm). The impurities can be localized within the Si grains (S), in the SiO matrix (Nd, Er) or at the Si-SiO interface (Er). The Er-related PL in SRSO was studied in detail: the maximum PL external quantum efficiency (EQE) of 0.01–0.1% was found in samples annealed at 900°C in diluted oxygen (∼ 10% in N2). The integrated PL temperature dependence is weak from 12K to 300K. Light emitting diodes (LEDs) with an active layer made of an intrinsic and doped SRSO are manufactured and studied: room temperature electroluminescence (EL) from the visible to 1.6 μmhas been demonstrated.

Correlation of efficient luminescence with crystal structures of y-Er2Si2O7 and α-Er2Si2O7 in Er-doped silicon oxide films

2019 ◽  
Vol 54 (19) ◽  
pp. 12668-12675 ◽  
Author(s):  
Yuhan Gao ◽  
Qianyu Fu ◽  
Hao Shen ◽  
Dongsheng Li ◽  
Deren Yang
Keyword(s):  
Crystal Structures ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Doped Silicon ◽  
Er Doped

Behavior of Various Organosilicon Molecules in PECVD Processes for Hydrocarbon-Doped Silicon Oxide Films

2007 ◽  
Vol 124-126 ◽  
pp. 347-350 ◽  
Author(s):  
Yong Sup Yun ◽  
Takanori Yoshida ◽  
Norifumi Shimazu ◽  
Yasushi Inoue ◽  
Nagahiro Saito ◽  
...  
Keyword(s):  
Chemical Bonding ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Optical Emission ◽  
Deposition Process ◽  
Doped Silicon ◽  
Oxygen Atoms

Plasma diagnosis was performed by means of optical emission spectroscopy in the plasma-enhanced chemical vapor deposition process for preparation of hydrocarbon-doped silicon oxide films. The chemical bonding states were characterized by a fourier-transform infrared spectrometer. Based on the results of the diagnosis in organosilane plasma and the chemical bonding states, a reaction model for the formation process of hydrocarbon-doped silicon oxide films was discussed. From the results of optical emission spectroscopy, we found that the oxygen atoms of methoxy groups in TMMOS molecules can be dissociated easily in the plasma and behave as a kind of oxidizing agent. Siloxane bondings in HMDSO, on the other hand, hardly expel oxygen atoms.

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