Direct observation of longitudinal spatial hole burning in semiconductor optical amplifiers with injection

2001 ◽  
Vol 78 (26) ◽  
pp. 4079-4081 ◽  
Author(s):  
J.-N. Fehr ◽  
M.-A. Dupertuis ◽  
T. P. Hessler ◽  
L. Kappei ◽  
D. Marti ◽  
...  
Keyword(s):  
Direct Observation ◽  
Optical Amplifiers ◽  
Semiconductor Optical Amplifiers ◽  
Hole Burning ◽  
Spatial Hole Burning

Longitudinal spatial hole burning and associated nonlinear gain in gain-clamped semiconductor optical amplifiers

1998 ◽  
Vol 34 (5) ◽  
pp. 879-886 ◽  
Author(s):  
J.L. Pleumeekers ◽  
M.-A. Dupertuis ◽  
T. Hessler ◽  
P.E. Selbmann ◽  
S. Haacke ◽  
...  
Keyword(s):  
Optical Amplifiers ◽  
Semiconductor Optical Amplifiers ◽  
Hole Burning ◽  
Nonlinear Gain ◽  
Spatial Hole Burning

GAIN DYNAMICS AND ASSOCIATED NONLINEARITIES IN SEMICONDUCTOR OPTICAL AMPLIFIERS

1996 ◽  
Vol 07 (01) ◽  
pp. 179-222 ◽  
Author(s):  
J. M. WIESENFELD
Keyword(s):  
Carrier Transport ◽  
Wavelength Conversion ◽  
Optical Amplifiers ◽  
Semiconductor Optical Amplifiers ◽  
Optical Amplifier ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Carrier Distribution ◽  
Dynamical Processes ◽  
Carrier Heating

A rich variety of dynamical processes underlie the operation of active semiconductor light-emitting devices, such as semiconductor optical amplifiers. These processes include interband and intraband carrier dynamics. Interband processes comprise spontaneous recombination, both radiative and Auger, stimulated radiative recombination, and carrier transport. Intraband processes comprise carrier heating and cooling and spectral hole-burning, among others. The dynamical processes affect both the gain and refractive index of the semiconductor optical amplifier. In this article, these dynamic processes and their physical origins are reviewed. Under conditions of large, time-varying changes in carrier density or intraband carrier distribution, nonlinear gain and refraction becomes significant. For applications requiring linear amplification, such nonlinearities are deleterious. However, for many applications such nonlinearities can be the basis for useful device functions. In particular, the nonlinearities of cross-gain modulation, cross-phase modulation, and four-wave mixing in semiconductor optical amplifiers have been applied for the functions of wavelength conversion, optical time-demultiplexing, clock recovery, and trans-multiplexing. Such nonlinear devices based on semiconductor optical amplifiers and their effects on propagating optical signals are also reviewed.

scholarly journals Dynamics and its Effects on Saturation Region in Semiconductor Optical Amplifiers

2021 ◽  
Vol 34 (4) ◽  
pp. 26-34
Author(s):  
Adnan H. Mohammed ◽  
Muna M. Jassem
Keyword(s):  
Recovery Time ◽  
Optical Amplifiers ◽  
Short Pulse ◽  
Semiconductor Optical Amplifiers ◽  
Current Injection ◽  
Hole Burning ◽  
Carrier Heating ◽  
Saturation Region ◽  
Bulk Semiconductor

We focus on studying the dynamics of bulk semiconductor optical amplifiers and their effects on the saturation region for short pulse that differ, however there is the same unsaturated gain for both dynamics. Parameters like current injection, fast dynamics present by carrier heating (CH), and spectra hole burning (SHB) are studied for regions that occur a response to certain dynamics. The behavior of the saturation region is found to be responsible for phenomena such as recovery time and chirp for the pulse under study.

COMPARISON BETWEEN ULTRAFAST GAIN AND PHASE DYNAMICS IN SEMICONDUCTOR OPTICAL AMPLIFIERS

2010 ◽  
Vol 19 (02) ◽  
pp. 319-325
Author(s):  
LI WANG ◽  
ZHI WANG ◽  
WEI-PING HUANG
Keyword(s):  
Optical Amplifiers ◽  
Broad Band ◽  
Semiconductor Optical Amplifiers ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Ultrafast Dynamics ◽  
Carrier Heating ◽  
Phase Dynamics ◽  
Spectral Hole ◽  
Bulk Semiconductor

The ultrafast dynamics of gain and phase in bulk semiconductor optical amplifiers are numerically investigated over a broad band of about 200 nm based on the semiclassical method of density matrix equations. The gain dynamics and phase dynamics are compared in four different bands for 200 fs Gaussian pump pulse. It is predicted that the recovery time of phase may be longer or shorter than that of gain depending on probe wavelengths. Furthermore, phase recovery overshoot may appear at wavelengths shorter than the pump wavelength. These interesting features result from the competition between spectral-hole burning and carrier heating over the whole band.

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