Role of oxygen in the film growth and giant magnetoresistance of Co/Cu multilayers

2001 ◽  
Vol 89 (11) ◽  
pp. 6308-6313 ◽  
Author(s):  
Satoshi Miura ◽  
Masakiyo Tsunoda ◽  
Migaku Takahashi
Keyword(s):  
Giant Magnetoresistance ◽  
Film Growth

Retarded Growth of Sputtered HfO2 Films on Germanium

2004 ◽  
Vol 811 ◽  
Author(s):  
Koji Kita ◽  
Masashi Sasagawa ◽  
Masahiro Toyama ◽  
Kentaro Kyuno ◽  
Akira Toriumi
Keyword(s):  
Film Growth ◽  
Early Stage ◽  
Gate Oxide ◽  
Interface Layer ◽  
Film Deposition ◽  
Si Substrate ◽  
Equivalent Thickness ◽  
Ternary Compounds ◽  
Si Substrates

ABSTRACTHfO2 films were deposited by reactive sputtering on Ge and Si substrates simultaneously, and we found not only the interface layer but the HfO2 film was thinner on Ge substrate compared with that on Si substrate. A metallic Hf layer has a crucial role for the thickness differences of both interface layer and HfO2 film, since those thickness differences were observed only when an ultrathin metallic Hf layer was predeposited before HfO2 film deposition. The role of metallic Hf is understandable by assuming a formation of volatile Hf-Ge-O ternary compounds at the early stage of film growth. These results show an advantage of HfO2/Ge over HfO2/Si systems from the viewpoint of further scaling of electrical equivalent thickness of the gate oxide films.

Observation of the CdTe-GaAs Interface by High Resolution Electron Microscopy

1984 ◽  
Vol 37 ◽  
Author(s):  
N. Otsuka ◽  
L. A. Kolodziejski ◽  
R. L. Gunshor ◽  
S. Datta ◽  
R. N. Bicknell ◽  
...  
Keyword(s):  
High Resolution ◽  
Film Growth ◽  
Substrate Surface ◽  
High Resolution Electron Microscopy ◽  
Gaas Substrates ◽  
Resolution Electron ◽  
Interfacial Structures ◽  
Substrate Preheating ◽  
High Resolution Electron Microscope

AbstractCdTe films have been grown on GaAs substrates with two types of interfaces - one with the epitaxial relation (111)CdTe║ (100)GaAs and the other with (100)CdTe║ (100)GaAs,. High resolution electron microscope observation of the two types of interfaces was carried out in order to determine the role of the substrate surface microstructure in determining the epitaxy. The interface of the former type shows a direct contact between the CdTe and GaAs crystals, while the interface of the latter type has a very thin oxide layer (∼10 Å in thickness) between the two crystals. These observations suggest that details of the substrate preheating cycle prior to film growth is the principle factor in determining which epitaxial relation occurs in this system. The relation between interfacial structures and the origin of the two epitaxial relations is discussed.

Dominant role of the size effect for saturation resistivity and giant magnetoresistance in Co/Cu multilayers

2001 ◽  
Vol 89 (11) ◽  
pp. 7118-7120 ◽  
Author(s):  
D. Elefant ◽  
D. Tietjen ◽  
L. van Loyen ◽  
I. Moench ◽  
C. M. Schneider
Keyword(s):  
Size Effect ◽  
Giant Magnetoresistance ◽  
Dominant Role

The role of spin‐dependent impurity scattering in Fe/Cr giant magnetoresistance multilayers

1991 ◽  
Vol 69 (8) ◽  
pp. 4792-4794 ◽  
Author(s):  
Peter Baumgart ◽  
Bruce A. Gurney ◽  
Dennis R. Wilhoit ◽  
Thao Nguyen ◽  
Bernard Dieny ◽  
...  
Keyword(s):  
Giant Magnetoresistance ◽  
Impurity Scattering

scholarly journals Deposition of Al Thin Film on Steel Substrate: The Role of Thickness on Crystallization and Grain Growth

Metals ◽  
2018 ◽  
Vol 9 (1) ◽  
pp. 12 ◽  
Author(s):  
Hayk Khachatryan ◽  
Sung-Nam Lee ◽  
Kyoung-Bo Kim ◽  
Moojin Kim
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Film Thickness ◽  
Grain Growth ◽  
Growth Process ◽  
Film Growth ◽  
Specular Reflection ◽  
Steel Substrate ◽  
Al Thin Film

In this study, we deposited aluminum (Al) films of different thicknesses on steel substrate and examined their phase, microstructure, and film growth process. We estimated that films of up to 30 nm thickness were mainly amorphous in nature. When the film thickness exceeded 30 nm, crystallization was observed. The further increase in film thickness triggered grain growth, and the formation of grains up to 40 nm occurred. In such cases, the Al film had a cross-grained structure with well-developed primary grains networks that were filled with small secondary grains. We demonstrated that the microstructure played a key role in optical properties. The films below 30 nm showed higher specular reflection, whereas thicker films showed higher diffuse reflections.

Low Temperature Deposited Highly-Conductive N-type SiC Thin Films

1997 ◽  
Vol 472 ◽  
Author(s):  
Kuan-Lun Cheng ◽  
Huang-Chung Cheng ◽  
Wen-Horng Lee ◽  
Chiapyng Lee ◽  
Tri-Rung Yew
Keyword(s):  
Low Temperature ◽  
Film Growth ◽  
Thin Film Transistor ◽  
Impurity Scattering ◽  
Gas Analyzer ◽  
Flow Rates ◽  
Sic Film ◽  
Dopant Source ◽  
Sic Films

ABSTRACTLow-temperature deposited highly-conductive SiC films has long been a goal for many researchers involved in hetero-junction bipolar transistor, thin-film transistor, solar cell.… etc. Here in this paper, we study the influences of the diluted PH3 flow rates on SiC film quality as well as electrical properties. PH+ was determined from residual gas analyzer to be the main dopant source. Phosphorous atoms will play a role of enhancing the SiC grain growth and resulting in a smaller film growth rate. Carrier concentrations increase monotonically with the diluted PH3 flow rates. While Hall mobility first increases than decreases with it due to a combination effect of the impurity scattering and a film quality improvement which dominates when the 1% PH3/H2 flow rate is above or below 40 seem, respectively.

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