Photoemission study of energy band alignment and gap state density distribution for high-k gate dielectrics

Author(s):  
Seiichi Miyazaki
2003 ◽  
Vol 786 ◽  
Author(s):  
A.A. Demkov ◽  
L.R.C. Fonseca ◽  
J. Tomfohr ◽  
O.F. Sankey

ABSTRACTWe investigate the use of the complex band structure of high-k gate dielectrics to estimate their charge neutrality levels, and compute band offsets to Si. Results of these model calculations are then compared to those obtained with direct electronic structure methods and available experiment. It appears that charge neutrality levels thus obtained indeed provide a consistent picture. However, the uncertainty in the conduction band position inherent in the local density approximation may render the theory inadequate for the engineering support. Despite this limitation, linear re-scaling of the charge neutrality levels based on the experimental band gaps has shown excellent agreement with experimental data.


2006 ◽  
Vol 911 ◽  
Author(s):  
Karsten Henkel ◽  
Mohamed Torche ◽  
Rakesh Sohal ◽  
Carola Schwiertz ◽  
Patrick Hoffmann ◽  
...  

AbstractWe combine high-k dielectrics with wide band gap semiconductors for new possibilities for high frequency and high power applications. We investigate the dielectric properties of Praseodymium based oxides and silicates by preparing MIS structures consisting of metal layer (M), PrOx (praseodymium oxide) as a high-k insulating layer (I), and silicon (Si) or silicon carbide (SiC) as semiconductor substrates (S). Our approach consists both, electrical measurements and spectroscopic characterization to analyze properties of the various interfaces within the stacks.For the electrical measurements we produce PrOx layers in the thickness range of 10nm to 240nm. We use capacitance-voltage analysis and determine permittivity values of 8 to 20 depending on physical thickness resulting in an equivalent oxide thickness (EOT) down to 5nm. These data are consistent with the formation of a Pr-silicate between Si and PrOx.In order to prevent interface reactions and to improve the band alignment an interfacial layer is introduced into the stack between the semiconductor and the high-k material. We find aluminum oxynitride (AlON) as a suitable layer which reduces the interface state density to a mean value of 5E11cm2/Vs and the leakage current (1V above flat band) below 1E-5A/cm2.


2008 ◽  
Vol 93 (9) ◽  
pp. 092907 ◽  
Author(s):  
Kuo-Hsing Kao ◽  
Shiow-Huey Chuang ◽  
Woei-Cherng Wu ◽  
Tien-Sheng Chao ◽  
Jian-Hao Chen ◽  
...  

2010 ◽  
Vol 87 (11) ◽  
pp. 2234-2240 ◽  
Author(s):  
S. Mallik ◽  
C. Mahata ◽  
M.K. Hota ◽  
G.K. Dalapati ◽  
D.Z. Chi ◽  
...  

2014 ◽  
Vol 23 (11) ◽  
pp. 117702 ◽  
Author(s):  
Kai Han ◽  
Xiao-Lei Wang ◽  
Yong-Gui Xu ◽  
Hong Yang ◽  
Wen-Wu Wang

1995 ◽  
Vol 02 (02) ◽  
pp. 147-152 ◽  
Author(s):  
RAINER HEISE ◽  
RALF COURTHS

Electronic structure effects induced by potassium adsorption up to one monolayer (ML) on a nearly stoichiometric TiO 2(110) surface has been studied by means of angle-resolved photoemission spectroscopy (ARUPS and ARXPS) from valence states and core levels. In agreement with the observations on K/TiO 2(100) [P.J. Hardman et al., Surf. Sci.269/270, 677 (1992)], potassium adsorption at room temperature leads—due to K-to-substrate charge transfer—to the reduction of surface Ti ions (to nominally Ti 3+ ions), evidenced by lowered Ti 2p core-level binding energy (ΔBE=–1.6 eV ) and occupation of Ti 3d-like band-gap states centered at 0.9 eV BE. The gap-state intensity exhibits a pronounced maximum at 0.37 ML coverage, where the work function has a weak minimum. This behavior is in agreement with a ionic-to-neutral transition of the K-substrate bonding with increasing K coverage, as suggested recently [Souda et al., Surf. Sci.285, 265 (1993)]. Annealing of a surface precovered with 0.27 ML potassium up to 1000 K results in metallization of the surface, evidenced by (i) the occupation of a second gap-state centered at 0.4 BE and with a considerable state-density at the Fermi energy, and (ii) Ti 2p core-levels lowered by 3.2 eV in BE (nominally “ Ti 2+” ions). This dramatic reduction of the surface is healed out with complete desorption of potassium. A discussion in terms of desorption of KO x species and oxygen diffusion from the bulk to the surface is given.


2010 ◽  
Vol 96 (4) ◽  
pp. 042903 ◽  
Author(s):  
Rahul Suri ◽  
Casey J. Kirkpatrick ◽  
Daniel J. Lichtenwalner ◽  
Veena Misra

2004 ◽  
Vol 85 (25) ◽  
pp. 6155-6157 ◽  
Author(s):  
Q. Li ◽  
S. J. Wang ◽  
K. B. Li ◽  
A. C. H. Huan ◽  
J. W. Chai ◽  
...  

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