Investigation of the cut location in hydrogen implantation induced silicon surface layer exfoliation

2001 ◽  
Vol 89 (11) ◽  
pp. 5980-5990 ◽  
Author(s):  
T. Höchbauer ◽  
A. Misra ◽  
M. Nastasi ◽  
J. W. Mayer
Keyword(s):  
Surface Layer ◽  
Silicon Surface ◽  
Hydrogen Implantation

Hydrogen-implantation induced silicon surface layer exfoliation

2000 ◽  
Vol 80 (11) ◽  
pp. 1921-1931 ◽  
Author(s):  
T. Hochbauert ◽  
A. Misra ◽  
R. Verda ◽  
M. Nastasi ◽  
J. W. Mayer ◽  
...  
Keyword(s):  
Surface Layer ◽  
Silicon Surface ◽  
Hydrogen Implantation

Hydrogen-implantation induced silicon surface layer exfoliation

2000 ◽  
Vol 80 (11) ◽  
pp. 1921-1931 ◽  
Author(s):  
T. Hochbauer, A. Misra, R. Verda, M. N
Keyword(s):  
Surface Layer ◽  
Silicon Surface ◽  
Hydrogen Implantation

Direct UHV-TEM Observation of Palladium Clusters on a Silicon Surface

2004 ◽  
Vol 10 (1) ◽  
pp. 134-138 ◽  
Author(s):  
Masaki Takeguchi ◽  
Kazutaka Mitsuishi ◽  
Miyoko Tanaka ◽  
Kazuo Furuya
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Surface Layer ◽  
Silicon Surface ◽  
Lattice Structure ◽  
Plan View ◽  
Palladium Clusters ◽  
Transmission Electron ◽  
Pd Clusters

About 1 monolayer of palladium was deposited onto a silicon (111) 7 × 7 surface at a temperature of about 550 K inside an ultrahigh vacuum transmission electron microscope, resulting in formation of Pd2Si nanoislands and a 1 × 1 surface layer. Pd clusters created from an excess of Pd atoms on the 1 × 1 surface layer were directly observed byin situplan view high-resolution transmission electron microscopy. When an objective aperture was introduced so that electron diffractions less than 0.20 nm were filtered out, the lattice structure of the 1 × 1 surface with 0.33 nm spacing and the Pd clusters with a trimer shape were visualized. It was found that image contrast of the 1 × 1 lattice on the specific height terraces disappeared, and thereby an atomic structure of the Pd clusters was clearly observed. The appearance and disappearance of the 1 × 1 lattice was explained by the effect of the kinematical diffraction. It was identified that a Pd cluster was composed of three Pd atoms without a centered Si atom, which is consistent with the model proposed previously. The feature of the Pd clusters stuck at the surface step was also described.

The simulation of epitaxy, sublimation, and annealing processes in a 3D silicon surface layer

2001 ◽  
Vol 35 (9) ◽  
pp. 1022-1029 ◽  
Author(s):  
A. V. Zverev ◽  
I. G. Neizvestnyi ◽  
N. L. Shvarts ◽  
Z. Sh. Yanovitskaya
Keyword(s):  
Surface Layer ◽  
Silicon Surface

scholarly journals Применение селективного контакта MoO-=SUB=-x-=/SUB=-/p-Si для оценки деградации приповерхностной области кремния

2020 ◽  
Vol 46 (24) ◽  
pp. 37
Author(s):  
Д.А. Кудряшов ◽  
А.С. Гудовских ◽  
А.А. Максимова ◽  
А.И. Баранов ◽  
А.В. Уваров ◽  
...  
Keyword(s):  
Surface Layer ◽  
Magnetron Sputtering ◽  
Silicon Surface ◽  
Silicon Oxide ◽  
Near Surface ◽  
Type Silicon ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Degree Of Damage ◽  
P Type

The possibility of evaluation the degree of damage to the near-surface layer of p-type silicon using a selective contact based on MoOx/p-Si is shown. A strong sensitivity of the current-voltage characteristics to the states on the silicon surface formed during the deposition of silicon oxide by magnetron sputtering is demonstrated.

DONOR GENERATION IN PLASMA TREATED SILICON

1989 ◽  
Vol 03 (06) ◽  
pp. 485-488
Author(s):  
O.E. KUSMARTSEVA ◽  
F.D. SENCHUKOV
Keyword(s):  
Surface Layer ◽  
Plasma Treatment ◽  
Silicon Surface ◽  
Discharge Plasma ◽  
Gas Discharge ◽  
Donor Center ◽  
Treatment Regimes ◽  
Donor Behavior ◽  
Conduction Type ◽  
Gas Discharge Plasma

An inversion of the conduction type of the p-silicon surface layer by gas discharge plasma treatment was observed. It was found that this conduction inversion was conditioned by donor center formation. Donor behavior are discussed. Some plasma treatment regimes to induce the donor centers in silicon are reported.

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