Nanoscale surface electrical properties of indium–tin–oxide films for organic light emitting diodes investigated by conducting atomic force microscopy

2001 ◽  
Vol 89 (7) ◽  
pp. 3976-3979 ◽  
Author(s):  
Heh-Nan Lin ◽  
Sy-Hann Chen ◽  
Gung-Yeong Perng ◽  
Show-An Chen
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Force Microscopy ◽  
Atomic Force ◽  
Organic Light ◽  
Tin Oxide Films

Highly oriented indium tin oxide films for high efficiency organic light-emitting diodes

2002 ◽  
Vol 91 (8) ◽  
pp. 5371-5376 ◽  
Author(s):  
H. Kim ◽  
J. S. Horwitz ◽  
W. H. Kim ◽  
Z. H. Kafafi ◽  
D. B. Chrisey
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Oxide Films ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light ◽  
Tin Oxide Films

Fabrication and Measurement of Electroluminescence and Electrical Properties of Organic Light-Emitting Diodes Containing Mott Insulator Nanocrystals

2016 ◽  
Vol 16 (4) ◽  
pp. 3398-3401
Author(s):  
Soichiro Nozoe ◽  
Nobuaki Kinoshita ◽  
Masaki Matsuda
Keyword(s):  
Electrical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Mott Insulator ◽  
Organic Light Emitting Diodes ◽  
Hole Injection ◽  
Light Emitting ◽  
Organic Light ◽  
Short Time

By using the short-time electrocrystallization technique, phthalocyanine (Pc)-based Mott insulator Co(Pc)(CN)2·2CHCl3 nanocrystals were fabricated and applied to organic light-emiting diodes (OLEDs). The fabricated device having the configuration ITO/Co(Pc)(CN)2·2CHCl3/Alq3/Al, in which ITO is indium-tin oxide and Alq3 is tris(8-hydroxyquinolinato)aluminum, showed clear emission from Alq3, suggesting the Mott insulator Co(Pc)(CN)2·2CHCl3 can work as useful hole-injection and transport material in OLEDs.

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