Effect of buffer layers and stacking faults on the reduction of threading dislocation density in GaN overlayers grown by metalorganic chemical vapor deposition

2001 ◽  
Vol 89 (5) ◽  
pp. 2617-2621 ◽  
Author(s):  
Hyung Koun Cho ◽  
Jeong Yong Lee ◽  
Ki Soo Kim ◽  
Gye Mo Yang ◽  
Jae Ho Song ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Dislocation Density ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Threading Dislocation ◽  
Threading Dislocation Density ◽  
Metalorganic Chemical

A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: a complete depth-resolved investigation

CrystEngComm ◽  
2020 ◽  
Vol 22 (1) ◽  
pp. 130-141
Author(s):  
Prerna Chauhan ◽  
S. Hasenöhrl ◽  
Ľ. Vančo ◽  
P. Šiffalovič ◽  
E. Dobročka ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Memory Effect ◽  
Systematic Study ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Molar Fraction ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Mocvd Reactor ◽  
Metalorganic Chemical

Thick InAlN layers (In-molar fraction >0.37) on GaN buffer layers were prepared using a close-coupled showerhead metalorganic chemical vapor deposition (MOCVD) reactor.

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