Effect of ions and radicals on formation of silicon nitride gate dielectric films using plasma chemical vapor deposition

2001 ◽  
Vol 89 (9) ◽  
pp. 5083-5087 ◽  
Author(s):  
Hiroyuki Ohta ◽  
Atsushi Nagashima ◽  
Masaru Hori ◽  
Toshio Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Dielectric Films ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Preparation of Plasma Chemical Vapor Deposition Silicon Nitride Films from SiH2F2and NH3Source Gases

1991 ◽  
Vol 30 (Part 2, No. 4A) ◽  
pp. L619-L621 ◽  
Author(s):  
Nobuaki Watanabe ◽  
Mamoru Yoshida ◽  
Yi-Chao Jiang ◽  
Tutomu Nomoto ◽  
Ichimatsu Abiko
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Silicon Nitride Films

Optical properties of silicon nitride films formed by plasma-chemical vapor deposition

2013 ◽  
Vol 80 (1) ◽  
pp. 89-92 ◽  
Author(s):  
L. A. Vlasukova ◽  
F. F. Komarov ◽  
I. N. Parkhomenko ◽  
O. V. Milchanin ◽  
A. V. Leont’ev ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Silicon Nitride Films
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