Transient and steady state simulations of internal temperature profiles in high-power semi-insulating GaAs photoconductive switches

2001 ◽  
Vol 89 (2) ◽  
pp. 1411-1417 ◽  
Author(s):  
P. Kayasit ◽  
R. P. Joshi ◽  
N. E. Islam ◽  
E. Schamiloglu ◽  
J. Gaudet
Keyword(s):  
Steady State ◽  
High Power ◽  
Temperature Profiles ◽  
Internal Temperature ◽  
Photoconductive Switches ◽  
Transient And Steady State

scholarly journals A New Dynamic Model to Predict Transient and Steady State PV Temperatures Taking into Account the Environmental Conditions

Energies ◽  
2018 ◽  
Vol 12 (1) ◽  
pp. 2 ◽  
Author(s):  
Socrates Kaplanis ◽  
Eleni Kaplani
Keyword(s):  
Steady State ◽  
Environmental Conditions ◽  
Solar Irradiance ◽  
Model Performance ◽  
Transient Temperature ◽  
Temperature Profiles ◽  
Time Constants ◽  
Proposed Model ◽  
Pv Cell ◽  
Transient And Steady State

Photovoltaic (PV) cell and module temperature profiles, Tc and Tpv, respectively, developed under solar irradiance were predicted and measured both at transient and steady state conditions. The predicted and measured Tc or Tpv covered both a bare c-Si PV cell, by SOLARTEC, at laboratory conditions using a solar light simulator, as well as various c-Si and pc-Si modules (SM55, Bioenergy 195W, Energy Solutions 125W) operating in field conditions. The time constants, τ, of the Tc and Tpv profiles were determined by the proposed model and calculated using the experimentally obtained profiles for both the bare PV cell and PV modules. For model validation, the predicted steady state and transient temperature profiles were compared with experimental ones and also with those generated from other models. The effect of the ambient temperature, Ta, wind speed, vw, and the solar irradiance, IT, on the model performance, as well as of the mounting geometries, was investigated and incorporated in the prediction model. The predicted temperatures had the best matching to the measured ones in comparison to those from six other models. The model developed is applicable to any geographical site and environmental conditions.

High-speed isotachophoresis. Analytical aspects of the steady-state longitudinal temperature profiles

1979 ◽  
Vol 44 (3) ◽  
pp. 841-853 ◽  
Author(s):  
Zbyněk Ryšlavý ◽  
Petr Boček ◽  
Miroslav Deml ◽  
Jaroslav Janák
Keyword(s):  
Steady State ◽  
Temperature Distribution ◽  
Electric Field ◽  
Field Intensity ◽  
Electric Field Intensity ◽  
Minor Component ◽  
Physical Models ◽  
Temperature Profiles ◽  
Longitudinal Temperature ◽  
Continuous Character

The problem of the longitudinal temperature distribution was solved and the bearing of the temperature profiles on the qualitative characteristics of the zones and on the interpretation of the record of the separation obtained from a universal detector was considered. Two approximative physical models were applied to the solution: in the first model, the temperature dependences of the mobilities are taken into account, the continuous character of the electric field intensity at the boundary being neglected; in the other model, the continuous character of the electric field intensity is allowed for. From a comparison of the two models it follows that in practice, the variations of the mobilities with the temperature are the principal factor affecting the shape of the temperature profiles, the assumption of a discontinuous jump of the electric field intensity at the boundary being a good approximation to the reality. It was deduced theoretically and verified experimentally that the longitudinal profiles can appreciably affect the longitudinal variation of the effective mobilities in the zone, with an infavourable influence upon the qualitative interpretation of the record. Pronounced effects can appear during the analyses of the minor components, where in the corresponding short zone a temperature distribution occurs due to the influence of the temperatures of the neighbouring zones such that the temperature in the zone of interest in fact does not attain a constant value in axial direction. The minor component does not possess the steady-state mobility throughout the zone, which makes the identification of the zone rather difficult.

Modeling of assembly systems with complex structures for throughput analysis during transients

2019 ◽  
Vol 39 (2) ◽  
pp. 262-271
Author(s):  
Yukan Hou ◽  
Yuan Li ◽  
Yuntian Ge ◽  
Jie Zhang ◽  
Shoushan Jiang
Keyword(s):  
Steady State ◽  
Fixed Point Theory ◽  
Point Theory ◽  
Assembly Systems ◽  
Complex Structures ◽  
Throughput Performance ◽  
Throughput Analysis ◽  
Content Type ◽  
Serial Production Lines ◽  
Transient And Steady State

Purpose The purpose of this paper is to present an analytical method for throughput analysis of assembly systems with complex structures during transients. Design/methodology/approach Among the existing studies on the performance evaluation of assembly systems, most focus on the system performance in steady state. Inspired by the transient analysis of serial production lines, the state transition matrix is derived considering the characteristics of merging structure in assembly systems. The system behavior during transients is described by an ergodic Markov chain, with the states being the occupancy of all buffers. The dynamic model for the throughput analysis is solved using the fixed-point theory. Findings This method can be used to predict and evaluate the throughput performance of assembly systems in both transient and steady state. By comparing the model calculation results with the simulation results, this method is proved to be accurate. Originality/value This proposed modeling method can depict the throughput performance of assembly systems in both transient and steady state, whereas most exiting methods can be used for only steady-state analysis. In addition, this method shows the potential for the analysis of complex structured assembly systems owing to the low computational complexity.

Analysis of high voltage operation of gallium arsenide photoconductive switches used in high power applications

1999 ◽  
Vol 86 (3) ◽  
pp. 1754-1758 ◽  
Author(s):  
N. E. Islam ◽  
E. Schamiloglu ◽  
C. B. Fleddermann ◽  
J. S. H. Schoenberg ◽  
R. P. Joshi
Keyword(s):  
Gallium Arsenide ◽  
High Voltage ◽  
High Power ◽  
Photoconductive Switches
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