Quantifying the efficiency of electrodes for positive carrier injection into poly(9,9-dioctylfluorene) and representative copolymers

2001 ◽  
Vol 89 (6) ◽  
pp. 3343-3351 ◽  
Author(s):  
Alasdair J. Campbell ◽  
Donal D. C. Bradley ◽  
Homer Antoniadis
Keyword(s):  
Carrier Injection ◽  
Positive Carrier

Investigation of spin-polarized carrier injection effect in|YBa2Cu3O7/SrTiO3/La0.67/Sr0.33MnO3 and YBa2Cu3O7/La0.67Sr0.33MnO3 heterostructures

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-53-Pr11-57
Author(s):  
B. Vengalis ◽  
V. Plausinaitiene ◽  
A. Abrutis ◽  
Z. Saltyte ◽  
R. Butkute ◽  
...  
Keyword(s):  
Carrier Injection ◽  
Spin Polarized ◽  
Injection Effect

Injecting Inter-Layers and the Built-in Potential of Blue Polymer Light-Emitting Diodes

2000 ◽  
Vol 660 ◽  
Author(s):  
Thomas M. Brown ◽  
Ian S. Millard ◽  
David J. Lacey ◽  
Jeremy H. Burroughes ◽  
Richard H. Friend ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Basic Structure ◽  
Thin Layers ◽  
Carrier Injection ◽  
Semiconducting Polymer ◽  
Light Emitting ◽  
Physical Mechanisms ◽  
Organic Solid ◽  
Polymer Light Emitting Diodes

ABSTRACTThe semiconducting-polymer/injecting-electrode heterojunction plays a crucial part in the operation of organic solid state devices. In polymer light-emitting diodes (LEDs), a common fundamental structure employed is Indium-Tin-Oxide/Polymer/Al. However, in order to fabricate efficient devices, alterations to this basic structure have to be carried out. The insertion of thin layers, between the electrodes and the emitting polymer, has been shown to greatly enhance LED performance, although the physical mechanisms underlying this effect remain unclear. Here, we use electro-absorption measurements of the built-in potential to monitor shifts in the barrier height at the electrode/polymer interface. We demonstrate that the main advantage brought about by inter-layers, such as poly(ethylenedioxythiophene)/poly(styrene sulphonic acid) (PEDOT:PSS) at the anode and Ca, LiF and CsF at the cathode, is a marked reduction of the barrier to carrier injection. The electro- absorption results also correlate with the electroluminescent characteristics of the LEDs.

Controlled Injection of Holes into ALQ3 Based Oleds by Means of An Oxidized Transport Layer

2001 ◽  
Vol 708 ◽  
Author(s):  
Mathew K. Mathai ◽  
Keith A. Higginson ◽  
Bing R. Hsieh ◽  
Fotios Papadimitrakopoulos
Keyword(s):  
Indium Tin Oxide ◽  
Oxidative Degradation ◽  
Transport Layer ◽  
Hole Injection ◽  
Carrier Injection ◽  
Salt Loading ◽  
Light Emitting ◽  
Hole Transporting ◽  
Intrinsic Degradation ◽  
Variable Conductivity

ABSTRACTIn this paper we report a method for tuning the extent of hole injection into the active light emitting tris- (8-hydroxyquinoline) aluminum (Alq3) layer in organic light emitting diodes (OLEDs). This is made possible by modifying the indium tin oxide (ITO) anode with an oxidized transport layer (OTL) comprising a hole transporting polycarbonate of N,N'-bis(3-hydroxymethyl)-N,N'-bis(phenyl) benzidine and diethylene glycol (PC-TPB-DEG) doped with varying concentrations of antimonium hexafluoride salt of N,N,N',N'-tetra-p-tolyl-4,4'-biphenyldiamine (TMTPD+ SbF6-). The conductivity of the OTL can be changed over three orders of magnitude depending on salt loading. The analysis of hole and electron current variations in these devices indicates that optimizing the conductivity of the OTL enables the modulation of hole injection into the Alq3 layer. The bipolar charge transport properties for OLEDs in which the interfacial carrier injection barriers have been minimized, are governed by the conductivities of the respective layers and in this case it is shown that the variable conductivity of the OTL does allow for better control of the same. Accordingly, varying the concentration of holes in the device indicates that beyond an optimum concentration of holes, further hole injection results in the formation of light quenching cationic species and the initiation of oxidative degradation processes in the Alq3 layer, thus accelerating the intrinsic degradation of these devices. The variable conductivity of the OTL can hence be used to minimize the occurrence of these processes.

Analysis of Hot Carrier Injection According to Gate Length

2019 ◽  
Vol 19 (10) ◽  
pp. 6746-6749 ◽  
Author(s):  
Taejin Jang ◽  
Myung-Hyun Baek ◽  
Min-Woo Kwon ◽  
Sungmin Hwang ◽  
Jeesoo Chang ◽  
...  
Keyword(s):  
Gate Length ◽  
Carrier Injection ◽  
Hot Carrier ◽  
Hot Carrier Injection

Energy Efficiency Analysis of Comb Source Carrier-Injection Ring-Based Silicon Photonic Link

2020 ◽  
Vol 26 (2) ◽  
pp. 1-13 ◽  
Author(s):  
Yanir London ◽  
Thomas Van Vaerenbergh ◽  
Anthony J. Rizzo ◽  
Peng Sun ◽  
Jared Hulme ◽  
...  
Keyword(s):  
Energy Efficiency ◽  
Efficiency Analysis ◽  
Carrier Injection ◽  
Silicon Photonic ◽  
Energy Efficiency Analysis

Tuning superconductivity by carrier injection

2010 ◽  
Vol 96 (8) ◽  
pp. 082507 ◽  
Author(s):  
Yuri Koval ◽  
Xiaoyue Jin ◽  
Christoph Bergmann ◽  
Yilmaz Simsek ◽  
Lütfi Özyüzer ◽  
...  
Keyword(s):  
Carrier Injection

scholarly journals 125 Gbit/s carrier-injection-based silicon micro-ring silicon modulators

2007 ◽  
Vol 15 (2) ◽  
pp. 430 ◽  
Author(s):  
Qianfan Xu ◽  
Sasikanth Manipatruni ◽  
Brad Schmidt ◽  
Jagat Shakya ◽  
Michal Lipson
Keyword(s):  
Carrier Injection
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