High-dielectric-constant Ta2O5/n-GaN metal-oxide-semiconductor structure

2000 ◽  
Vol 77 (23) ◽  
pp. 3788-3790 ◽  
Author(s):  
L. W. Tu ◽  
W. C. Kuo ◽  
K. H. Lee ◽  
P. H. Tsao ◽  
C. M. Lai ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Metal Oxide ◽  
High Dielectric Constant ◽  
Metal Oxide Semiconductor ◽  
Semiconductor Structure ◽  
Oxide Semiconductor ◽  
High Dielectric ◽  
Metal Oxide Semiconductor Structure

scholarly journals STRUCTURAL AND ELECTRICAL PROPERTIES OF TANTALUM PENTAOXIDE (Ta2O5) THIN FILMS – A REVIEW

2013 ◽  
Vol 22 ◽  
pp. 564-569
Author(s):  
KANTA RATHEE ◽  
B. P. MALIK
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Metal Oxide ◽  
High Dielectric Constant ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Structural And Electrical Properties ◽  
High Dielectric ◽  
Deposited Films

Down scaling of complementary metal oxide semiconductor transistors has put limitations on silicon dioxide to be used as an effective dielectric. It is necessary to replace the SiO 2 with a physically thicker layer of oxides of high dielectric constant. Thus high k dielectrics are used to suppress the existing challenges for CMOS scaling. Many new oxides are being evaluated as gate dielectrics such as Ta2O5 , HfO2 , ZrO2 , La2O3 , HfO2 , TiO2 , Al2O3 , Y2O3 etc but it was soon found that these oxides in many respects have inferior electronic properties to SiO2 . But the the choice alone of suitable metal oxide with high dielectric constant is not sufficient to overcome the scaling challenges. The various deposition techniques and the conditions under which the thin films are deposited plays important role in deciding the structural and electrical properties of the deposited films. This paper discusses in brief the various deposition conditions which are employed to improve the structural and electrical properties of the deposited films.

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