Is noise a crucial factor in rate equation modeling of nonlinear dynamics in laser diodes?

2000 ◽  
Vol 77 (22) ◽  
pp. 3493-3495 ◽  
Author(s):  
C. G. Lim ◽  
S. Iezekiel ◽  
C. M. Snowden
2009 ◽  
Vol 156-158 ◽  
pp. 211-216 ◽  
Author(s):  
G. Kissinger ◽  
J. Dabrowski ◽  
V.D. Akhmetov ◽  
Andreas Sattler ◽  
D. Kot ◽  
...  

The results of highly sensitive FTIR investigation, ab initio calculations and rate equation modeling of the early stages of oxide precipitation are compared. The attachment of interstitial oxygen to VOn is energetically more favorable than the attachment to On for n  6. For higher n the energy gain is comparable. The point defect species which were detected by highly sensitive FTIR in high oxygen Czochralski silicon wafers are O1, O2, O3, and VO4. Rate equation modeling for I, V, On and VOn with n = (1..4) also yields O1, O2, O3 to appear with decreasing concentration and VO4 as that one of the VOn species which would appear in the highest concentration after RTA.


1995 ◽  
Vol 142 (3) ◽  
pp. 157-161 ◽  
Author(s):  
L.N. Langley ◽  
K.A. Shore ◽  
S.I. Turovets

1989 ◽  
Vol 7 (3) ◽  
pp. 2180-2185 ◽  
Author(s):  
C. E. Aumann ◽  
R. Kariotis ◽  
M. G. Lagally

2020 ◽  
Vol 12 (4) ◽  
pp. 1-14
Author(s):  
Ana Quirce ◽  
Alejandro Rosado ◽  
Jaime Diez ◽  
Angel Valle ◽  
Antonio Perez-Serrano ◽  
...  

2004 ◽  
Author(s):  
Silvia Ortin ◽  
Luis Pesquera ◽  
Antonio Cofino ◽  
Angel Valle ◽  
Jose M. Gutierrez

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