Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure

2000 ◽  
Vol 88 (11) ◽  
pp. 6583-6588 ◽  
Author(s):  
S. Elhamri ◽  
A. Saxler ◽  
W. C. Mitchel ◽  
C. R. Elsass ◽  
I. P. Smorchkova ◽  
...  
Keyword(s):  
High Mobility ◽  
Persistent Photoconductivity ◽  
Gan Heterostructure

Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure

2000 ◽  
Vol 639 ◽  
Author(s):  
S. Elhamri ◽  
A. Saxler ◽  
D. Cull ◽  
W. C. Mitchel ◽  
C.R. Elsass ◽  
...  
Keyword(s):  
Carrier Density ◽  
Light Emitting Diode ◽  
High Mobility ◽  
Initial Increase ◽  
Persistent Photoconductivity ◽  
Light Emitting ◽  
Alloy Scattering ◽  
Temperature Variable ◽  
Dimensional Electron Gas ◽  
Gan Heterostructure

ABSTRACTTemperature-variable Hall and Shubnikov- de Haas effects have been used to study persistent photoconductivity in an AlGaN/GaN heterojunction. At liquid helium temperatures, the mobility in this structure was close to 55000 cm2/Vs. A blue GaN-based light emitting diode was used to illuminate the sample. This illumination resulted in a persistent photocurrent, which allowed us to vary the carrier density and study the dependence of the mobility on the carrier concentration. Exposing the sample to this light resulted in an increase in the carrier density. For small increases in the density, the mobility also increased. However, unlike in previous reports by other authors, extended illumination resulted in an increase in the density and a decrease in the mobility. The initial increase in the mobility is attributed to increased screening due to the increase in the carrier density, while the decrease in the mobility may be attributed to alloy scattering.

Characterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity

2008 ◽  
Vol 5 (6) ◽  
pp. 1892-1894 ◽  
Author(s):  
B. K. Li ◽  
K. J. Chen ◽  
K. M. Lau ◽  
W. K. Ge ◽  
J. N. Wang
Keyword(s):  
Persistent Photoconductivity ◽  
Deep Centers ◽  
Gan Heterostructure

Suppression of persistent photoconductivity AlGaN/GaN heterostructure photodetectors using pulsed heating

2019 ◽  
Vol 12 (12) ◽  
pp. 122007 ◽  
Author(s):  
Jianwen Sun ◽  
Teng Zhan ◽  
Zewen Liu ◽  
Junxi Wang ◽  
Xiaoyan Yi ◽  
...  
Keyword(s):  
Persistent Photoconductivity ◽  
Pulsed Heating ◽  
Gan Heterostructure

scholarly journals Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells

2007 ◽  
Vol 91 (14) ◽  
pp. 142120 ◽  
Author(s):  
S. Dasgupta ◽  
C. Knaak ◽  
J. Moser ◽  
M. Bichler ◽  
S. F. Roth ◽  
...  
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
High Mobility ◽  
Persistent Photoconductivity ◽  
Thermally Activated ◽  
Donor Binding Energy

Persistent Photoconductivity in p-Type GaN Epilayers and n-Type AlGaN/GaN Heterostructures

1996 ◽  
Vol 449 ◽  
Author(s):  
J. Z. Li ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
M. A. Khan ◽  
Q. Chen ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Persistent Photoconductivity ◽  
Dimensional Electron ◽  
Metal Organic ◽  
Dimensional Electron Gas ◽  
Gan Heterostructure ◽  
P Type ◽  
Organic Chemical Vapor Deposition

ABSTRACTPersistent photoconductivity (PPC) effect has been observed in p-type GaN epilayers grown both by metal-organic chemical vapor deposition (MOCVD) and reactive molecular beam epitaxy (MBE) as well as in a two-dimensional electron gas (2DEG) system formed by an AlGaN/GaN heterostructure grown by MOCVD. Its properties have been investigated at different conditions.

Phase diagram for the quantum Hall effect in a high-mobility AlGaN/GaN heterostructure

2001 ◽  
Vol 13 (8) ◽  
pp. L175-L181
Author(s):  
J J Harris ◽  
K J Lee ◽  
D K Maude ◽  
J-C Portal ◽  
T Wang ◽  
...  
Keyword(s):  
Phase Diagram ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
High Mobility ◽  
Gan Heterostructure

Persistent Photoconductivity in High-mobility AlxGa1−xN/AlN/GaN Heterostructures Grown by Metal-organic Vapor-phase Epitaxy

2006 ◽  
Vol 955 ◽  
Author(s):  
Necmi Biyikli ◽  
Umit Ozgur ◽  
Xianfeng Ni ◽  
Yi Fu ◽  
Hadis Morkoc ◽  
...  
Keyword(s):  
Strong Dependence ◽  
Electron Gas ◽  
High Mobility ◽  
Cryogenic Temperatures ◽  
Persistent Photoconductivity ◽  
Dimensional Electron ◽  
Organic Vapor ◽  
Metal Organic ◽  
Illumination Wavelength ◽  
Dimensional Electron Gas

ABSTRACTWe report on the persistent photoconductivity (PPC) effect in AlxGa1−xN/AlN/GaN heterostructures with two different Al compositions (x=0.15 and 0.25). The two-dimensional electron gas (2DEG) was characterized by Shubnikov-de Haas and Hall measurements. At cryogenic temperatures under optical illumination, the 2DEG carrier density and mobility was enhanced. The persistent photocurrent in both samples exhibited a strong dependence on illumination wavelength.

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