Ultrathin silicon nitride gate dielectrics prepared by catalytic chemical vapor deposition at low temperatures

2000 ◽  
Vol 77 (17) ◽  
pp. 2752-2754 ◽  
Author(s):  
Hidekazu Sato ◽  
Akira Izumi ◽  
Hideki Matsumura
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Low Temperatures ◽  
Gate Dielectrics ◽  
Chemical Vapor ◽  
Catalytic Chemical Vapor Deposition

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

The Use of Disordered Interlayers to Enhance Nucleation of Silicon Nitride During Chemical Vapor Deposition

1995 ◽  
Vol 403 ◽  
Author(s):  
Rachel E. Boekenhauer ◽  
Frederick S. Lauten ◽  
Brian W. Sheldon
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Low Temperatures ◽  
Chemical Vapor ◽  
Crystalline Material ◽  
Sem And Tem ◽  
Crystalline Films ◽  
Favorable Conditions

AbstractThin, disordered interlayers were used to enhance the nucleation of Si3N4. Continuous crystalline films were formed at relatively low temperatures (<1250°C) by using an amorphous, Sirich interlayer. The interlayer was produced by varying the CVD conditions (i.e., by using multistep processing). Samples were characterized with XPS, SEM, and TEM with concurrent EELS. The results indicate that the nucleation of crystalline material is very sensitive to the structure and composition of the disordered interlayers. Also, the structure and composition of the interlayers evolve during growth, such that crystalline material only nucleates when the interlayer provides favorable conditions.

scholarly journals Catalytic Chemical Vapor Deposition of Single-Wall Carbon Nanotubes at Low Temperatures

Nano Letters ◽  
2006 ◽  
Vol 6 (6) ◽  
pp. 1107-1112 ◽  
Author(s):  
Mirco Cantoro ◽  
Stephan Hofmann ◽  
Simone Pisana ◽  
Vittorio Scardaci ◽  
Atlus Parvez ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Low Temperatures ◽  
Chemical Vapor ◽  
Single Wall Carbon Nanotubes ◽  
Single Wall Carbon ◽  
Catalytic Chemical Vapor Deposition
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