Size control of silicon nanocrystals in silicon nitride film deposited by catalytic chemical vapor deposition at a low temperature (⩽200°C)

2009 ◽  
Vol 60 (8) ◽  
pp. 703-705 ◽  
Author(s):  
Kyoung-Min Lee ◽  
Tae-Hwan Kim ◽  
Jae-Dam Hwang ◽  
Seunghun Jang ◽  
Kiyoung Jeong ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Silicon Nanocrystals ◽  
Size Control ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Catalytic Chemical Vapor Deposition

Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride Film from Hexachloro-Disilane and Hydrazine

1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 1509-1512 ◽  
Author(s):  
Wen-Chang Yeh ◽  
Ryoichi Ishihara ◽  
Shunsuke Morishita ◽  
Masakiyo Matsumura
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Silicon Nitride Film

Plasma-enhanced chemical-vapor deposition of silicon nitride film for high resistance to potential-induced degradation

2015 ◽  
Vol 54 (8S1) ◽  
pp. 08KD12 ◽  
Author(s):  
Ken Mishina ◽  
Atsufumi Ogishi ◽  
Kiyoshi Ueno ◽  
Sachiko Jonai ◽  
Norihiro Ikeno ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
High Resistance ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Silicon Nitride Film

In Situ Contamination Control Investigation of Silicon Nitride Low Pressure Chemical Vapor Deposition Process in Vertical Thermal Reactors

1992 ◽  
Vol 259 ◽  
Author(s):  
Mansour Moinpour ◽  
K. Bohannan ◽  
M. Shenasa ◽  
A. Sharif ◽  
G. Guzzo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Contamination Control ◽  
Pressure Chemical

ABSTRACTA contamination control study of a Silicon Valley Group Thermco Systems Vertical Thermal Reactor(VTR) is presented. Trace elements of contaminants such as water vapor and oxygen have been shown to significantly affect the integrity of the silicon nitride film deposited by the low pressure chemical vapor deposition (LPCVD) process. This study documented the effects of process parameters on gaseous contamination levels, i.e., O2 and H2O vapor. Starting with a baseline process, the effects of an excursion of pre-deposition temperature ramp-up and stabilization condition, wafer load/unload and various post deposition conditions were explored. An axial profile of moisture and oxygen levels along the wafer load was obtained using Linde's Low Pressure Reactor Analysis(LPRAS) methodology. In addition, other process parameters such as gas flow rates during load and unload of wafers, pre-deposition N2 purge and process tube exposure time to ambient environment were- investigated. The wafers were analyzed for contaminants on the wafer surface or in the deposited silicon nitride film using FTIR and Auger spectroscopy techniques. They showed low levels of Si-O and no measurable Si-H or N-H bonds.

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