Vertically faceted lateral overgrowth of GaN on SiC with conducting buffer layers using pulsed metalorganic chemical vapor deposition

2000 ◽  
Vol 77 (15) ◽  
pp. 2343-2345 ◽  
Author(s):  
R. S. Qhalid Fareed ◽  
J. W. Yang ◽  
Jianping Zhang ◽  
Vinod Adivarahan ◽  
Vinamra Chaturvedi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Lateral Overgrowth ◽  
Metalorganic Chemical

A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: a complete depth-resolved investigation

CrystEngComm ◽  
2020 ◽  
Vol 22 (1) ◽  
pp. 130-141
Author(s):  
Prerna Chauhan ◽  
S. Hasenöhrl ◽  
Ľ. Vančo ◽  
P. Šiffalovič ◽  
E. Dobročka ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Memory Effect ◽  
Systematic Study ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Molar Fraction ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Mocvd Reactor ◽  
Metalorganic Chemical

Thick InAlN layers (In-molar fraction >0.37) on GaN buffer layers were prepared using a close-coupled showerhead metalorganic chemical vapor deposition (MOCVD) reactor.

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