Measurement of silicon surface recombination velocity using ultrafast pump–probe reflectivity in the near infrared

2000 ◽  
Vol 88 (11) ◽  
pp. 6954-6956 ◽  
Author(s):  
A. J. Sabbah ◽  
D. M. Riffe
Keyword(s):  
Silicon Surface ◽  
Near Infrared ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Pump Probe ◽  
Recombination Velocity

scholarly journals Quinhydrone Chemical Passivation of a Silicon Surface for Minority Carrier Bulk-Lifetime Measurements

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
M. Solcansky ◽  
J. Vanek ◽  
A. Poruba
Keyword(s):  
Silicon Surface ◽  
Surface Passivation ◽  
Minority Carrier ◽  
Surface Recombination ◽  
Optimal Solution ◽  
Surface Recombination Velocity ◽  
Start Up ◽  
Chemical Passivation ◽  
Recombination Velocity

For the measurement of the minority carrier bulk-lifetime the characterization method MW-PCD is used, where the result of measurement is the effective carrier lifetime, which is very dependent on the surface recombination velocity and therefore on the quality of a silicon surface passivation. This work deals with an examination of a different solution types for the chemical passivation of a silicon surface. Various solutions are tested on silicon wafers for their consequent comparison. The main purpose is to find optimal solution, which suits the requirements of a time stability and start-up velocity of passivation, reproducibility of the measurements and a possibility of a perfect cleaning of a passivating solution remains from a silicon surface, so that the parameters of a measured silicon wafer will not worsen and there will not be any contamination of the other wafers series in the production after a repetitive return of the measured wafer into the production process. The cleaning process itself is also a subject of a development.

scholarly journals Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films

2014 ◽  
Vol 16 (39) ◽  
pp. 21804-21811 ◽  
Author(s):  
Vandana Vandana ◽  
Neha Batra ◽  
Jhuma Gope ◽  
Rajbir Singh ◽  
Jagannath Panigrahi ◽  
...  
Keyword(s):  
Silicon Surface ◽  
Surface Passivation ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Thermal Budget ◽  
Fixed Charges ◽  
Short Annealing ◽  
Recombination Velocity ◽  
Low Thermal Budget ◽  
Silicon Surface Passivation

Silicon surface passivation is studied using Al2O3 films by the thermal ALD process. A surface recombination velocity of below 10 cm s−1 is realized for short annealing times (∼100 s). As-deposited and annealed films show the presence of positive fixed charges.

Comparison of Efficiencies of Different Surface Passivations Applied to Crystalline Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 585-590 ◽  
Author(s):  
Olivier Palais ◽  
Mustapha Lemiti ◽  
Jean-Francois Lelievre ◽  
Santo Martinuzzi
Keyword(s):  
Silicon Surface ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Phosphorus Diffusion ◽  
Type Silicon ◽  
Good Surface ◽  
Recombination Velocity ◽  
P Type

In this work the efficiencies of different surface passivation techniques are compared. This paper emphasizes on the passivation provided by SiNx:H layers that is commonly used in photovolaic industry as surface passivation and anti reflection layer. The method used to evaluate the surface recombination velocity is detailed and discussed. It is shown that light phosphorus diffusion at 850°C – 20 min provides good surface passivation of n-type silicon surface and noticeable passivation of p-type, that can be improved by SiNx:H Layer.

Modelling of the Dislocation Influence on Electrical Properties of Polycrystalline Silicon Cells

1987 ◽  
Vol 106 ◽  
Author(s):  
H. El Ghitani ◽  
S. Martinuzzi
Keyword(s):  
Polycrystalline Silicon ◽  
Near Infrared ◽  
Diffusion Length ◽  
Dislocation Line ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Spectral Variation ◽  
Recombination Activity ◽  
Electron Diffusion Length ◽  
Recombination Velocity

ABSTRACTThe influence of the density Ndis and recombination activity Sd of dislocations on the photocurrent Jsc, the spectral variation of Jsc and electron diffusion length Ln are computed by means of the Green's function. Sd is the surface recombination velocity of the space charge cylinder surrounding a dislocation line, assumed to be perpendicular to the illuminated surface of the cells.It is found that the value and the spectral variation in the near infrared of Jsc and that of Ln, are dependent on Ndis and Sd, specially when Ndis and Sd are higher than 104 cm−2 and 104 cm s−1 respectively. A reasonnable agreement is obtained with experimental results.

scholarly journals Numerical Simulation Analysis of Ag Crystallite Effects on Interface of Front Metal and Silicon in the PERC Solar Cell

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 592
Author(s):  
Myeong Sang Jeong ◽  
Yonghwan Lee ◽  
Ka-Hyun Kim ◽  
Sungjin Choi ◽  
Min Gu Kang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Surface Recombination ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Metal Interface ◽  
Ag Crystallites ◽  
Recombination Velocity

In the fabrication of crystalline silicon solar cells, the contact properties between the front metal electrode and silicon are one of the most important parameters for achieving high-efficiency, as it is an integral element in the formation of solar cell electrodes. This entails an increase in the surface recombination velocity and a drop in the open-circuit voltage of the solar cell; hence, controlling the recombination velocity at the metal-silicon interface becomes a critical factor in the process. In this study, the distribution of Ag crystallites formed on the silicon-metal interface, the surface recombination velocity in the silicon-metal interface and the resulting changes in the performance of the Passivated Emitter and Rear Contact (PERC) solar cells were analyzed by controlling the firing temperature. The Ag crystallite distribution gradually increased corresponding to a firing temperature increase from 850 ∘C to 950 ∘C. The surface recombination velocity at the silicon-metal interface increased from 353 to 599 cm/s and the open-circuit voltage of the PERC solar cell decreased from 659.7 to 647 mV. Technology Computer-Aided Design (TCAD) simulation was used for detailed analysis on the effect of the surface recombination velocity at the silicon-metal interface on the PERC solar cell performance. Simulations showed that the increase in the distribution of Ag crystallites and surface recombination velocity at the silicon-metal interface played an important role in the decrease of open-circuit voltage of the PERC solar cell at temperatures of 850–900 ∘C, whereas the damage caused by the emitter over fire was determined as the main cause of the voltage drop at 950 ∘C. These results are expected to serve as a steppingstone for further research on improvement in the silicon-metal interface properties of silicon-based solar cells and investigation on high-efficiency solar cells.

Investigation of Surface Passivation in InAs/GaSb Strained-Layer-Superlattices Using Picosecond Excitation Correlation Measurement and Variable-Area Diode Array Surface Recombination Velocity Measurement

2005 ◽  
Vol 891 ◽  
Author(s):  
Zhimei Zhu ◽  
Elena Plis ◽  
Abdenour Amtout ◽  
Pallab Bhattacharya ◽  
Sanjay Krishna
Keyword(s):  
Infrared Detectors ◽  
Surface Passivation ◽  
Surface Recombination ◽  
Surface States ◽  
Depletion Region ◽  
Surface Recombination Velocity ◽  
Diode Array ◽  
Ammonium Sulfide ◽  
Picosecond Excitation ◽  
Recombination Velocity

ABSTRACTThe effect of ammonium sulfide passivation on InAs/GaSb superlattice infrared detectors was investigated using two complementary techniques, namely, picosecond excitation correlation (PEC) measurement and variable-area diode array (VADA) surface recombination velocity (SRV) measurement. PEC measurements were conducted on etched InAs/GaSb superlattice mesas, which were passivated in aqueous ammonium sulfide solutions of various strengths for several durations. The PEC signal's decay time constant (DTC) is proportional to carrier lifetimes. At 77 K the PEC signal's DTC of the as-grown InAs/GaSb superlattice sample was 2.0 ns, while that of the unpassivated etched sample was reduced to 1.2 ns by the surface states at the mesa sidewalls. The most effective ammonium sulfide passivation process increased the PEC signal's DTC to 10.4 ns. However it is difficult to isolate surface recombination from other processes that contribute to the lifetime using the PEC data, therefore a VADA SRV measurement was undertaken to determine the effect of passivation on surface recombination. The obtained SRV in the depletion region of the InAs/GaSb superlattice and GaSb junction was 1.1×106 cm/s for the unpassivated sample and 4.6×105 cm/s for the passivated sample. At 77 K the highest R0A value measured in our passivated devices was 2540 W cm2 versus 0.22 W cm2 for the unpassivated diodes. The results of the lifetime, the SRV and the R0A measurements indicate that ammonium sulfide passivation will improve the performance of InAs/GaSb superlattice infrared detectors.

IR and MW Absorption Techniques for Bulk and Surface Recombination Control in High-Quaiity Silicon

1995 ◽  
Vol 386 ◽  
Author(s):  
A. Kaniava ◽  
U. Menczigar ◽  
J. Vanhellemont ◽  
J. Poortmans ◽  
A. L. P. Rotondaro ◽  
...  
Keyword(s):  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Silicon Substrates ◽  
Injection Level ◽  
Effective Lifetime ◽  
Carrier Recombination ◽  
High Injection Level ◽  
High Injection ◽  
Wide Range ◽  
Recombination Velocity

ABSTRACTThe carrier recombination rate in high-quality FZ and Cz silicon substrates is studied by contactless infrared and microwave absorption techniques. Different surface treatments covering a wide range of surface recombination velocity have been used for the separation of bulk and surface recombination components and evaluating of the efficiency of passivation. Limitations of effective lifetime approach are analyzed specific for low and high injection level. Sensitivity limits of the techniques for iron contamination are discussed

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