Scanning reflection electron microscopy study of surface defects in GaN films formed by epitaxial lateral overgrowth

2000 ◽  
Vol 77 (12) ◽  
pp. 1786 ◽  
Author(s):  
Heiji Watanabe ◽  
Naotaka Kuroda ◽  
Haruo Sunakawa ◽  
Akira Usui
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Reflection Electron Microscopy

UHV Electron Microscopy study of in situ annealed (100) surfaces of MgO

1991 ◽  
Vol 49 ◽  
pp. 624-625
Author(s):  
M. Gajdardziska-Josifovska ◽  
M. R. McCartney ◽  
J. M. Cowley
Keyword(s):  
Electron Microscopy ◽  
Surface Characterization ◽  
High Vacuum ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Ultra High Vacuum ◽  
Frequent Use ◽  
Reflection Electron Microscopy ◽  
Catalyst Systems

The (100) surface of magnesium oxide is of considerable interest because of its frequent use as substrate for epitaxial growth of metal films, high Tc superconductors and model catalyst systems. A large number of surface characterization techniques have been used to determine the atomic structure of the cleaved (100) surface. Clean surfaces have been produced either by cleaving MgO crystals in-situ under ultra-high vacuum (UHV) conditions, or more frequently, by cleaving in air and subsequent annealing in UHV. A wide variety of annealing temperatures and times have been used by different researchers, the upper limit on the temperature being set at ≈900°C to avoid segregation of Ca to the surface. Calcium is the main impurity in even the purest MgO crystals and a few studies have dealt with the structure of the Ca-rich (100) surface of MgO. All of the existing studies have used diffraction and spectroscopy techniques without imaging of the surface. It is the purpose of this work to study the topography of the UHV-annealed (100) surface by reflection electron microscopy (REM).

Gold-induced faceting on a Si(001) vicinal surface: Spot-profile-analyzing LEED and reflection-electron-microscopy study

1999 ◽  
Vol 59 (3) ◽  
pp. 2363-2375 ◽  
Author(s):  
H. Minoda ◽  
K. Yagi ◽  
F.-J. Meyer zu Heringdorf ◽  
A. Meier ◽  
D. Kähler ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Vicinal Surface ◽  
Surface Spot ◽  
Reflection Electron Microscopy

Characteristics of Fielo-GaN Grown by Hydride Vapor Phase Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Akira Usui ◽  
Haruo Sunakawa ◽  
Kenji Kobayashi ◽  
Heiji Watanabe ◽  
Masashi Mizuta
Keyword(s):  
Electron Microscopy ◽  
Dislocation Density ◽  
Hydride Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Rocking Curve ◽  
X Ray ◽  
Lateral Overgrowth ◽  
Dislocation Behavior ◽  
Reflection Electron Microscopy

ABSTRACTThe crystal quality of facet-initiated epitaxial lateral overgrowth (FIELO) -GaN, in particular, that in the vicinity of the GaN surface, is reported. It is shown that the surface smoothness of FIELO-GaN enables us to use it as an “epi-ready” substrate. The crystallinity of FIELO-GaN is evaluated by x-ray rocking curve (XRC) measurements. We indicate that the FWHM of XRC should be reduced with the decrease of the dislocation density. We previously reported that the dislocation behavior of FIELO-GaN causes the tilting of the c-axis in the overgrown regions. By using scanning reflection electron microscopy (SREM), however, we show that the tilting on the surface of thick FIELO-GaN was negligibly small.

Reflection electron microscopy study of thin film growth

1993 ◽  
Vol 228 (1-2) ◽  
pp. 12-17 ◽  
Author(s):  
Katsumichi Yagi ◽  
Hiroki Minoda ◽  
Masashi Shima
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Film Growth ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Thin Film Growth ◽  
Reflection Electron Microscopy
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