Conical potential model for InGaAs/GaAs quantum dots formed in tetrahedral-shaped recesses

2000 ◽  
Vol 88 (8) ◽  
pp. 4745
Author(s):  
Akira Endoh ◽  
Yoshiki Sakuma ◽  
Motomu Takatsu ◽  
Yuji Awano ◽  
Naoki Yokoyama
Keyword(s):  
Quantum Dots ◽  
Potential Model

A Single-Band Constant-Confining-Potential Model for Self-Assembled InAs/GaAs Quantum Dots

2000 ◽  
Vol 642 ◽  
Author(s):  
M. Califano ◽  
P. Harrison
Keyword(s):  
Quantum Dots ◽  
Bound States ◽  
State Energy ◽  
Potential Model ◽  
Photoluminescence Spectra ◽  
Energy Eigenvalues ◽  
Confining Potential ◽  
Band Mixing ◽  
Structure Calculations ◽  
Good Agreement

ABSTRACTA simple and versatile numerical method for electronic structure calculations in InAs pyramidal dots is presented, and its predictions compared with both theoretical and experimental data. The calculated ground state energy eigenvalues agree well with those of more sophisticated treatments which take into account band mixing and the microscopic effects of the strain distribution. The number of electron bound states predicted is in excellent agreement with very recent calculations for strained quantum dots performed in the framework of the 8-band k · p theory. Very good agreement is obtained with both the number and the energy of the peaks in several experimental photoluminescence spectra. Furthermore our ca agreement with that deduced from capacitance and photoluminescence measurements.

Nanostructure of semiconductor quantum dots in a borosilicate glass matrix by complementary use of HREM and AEM

1990 ◽  
Vol 48 (4) ◽  
pp. 728-729
Author(s):  
M.J. Kim ◽  
L.C. Liu ◽  
S.H. Risbud ◽  
R.W. Carpenter
Keyword(s):  
Quantum Dots ◽  
Borosilicate Glass ◽  
Glass Matrix ◽  
Optical Switching ◽  
Response Times ◽  
Fast Response ◽  
Processing Technique ◽  
Internal Stresses ◽  
Electron Hole ◽  
Spatial Dimensions

When the size of a semiconductor is reduced by an appropriate materials processing technique to a dimension less than about twice the radius of an exciton in the bulk crystal, the band like structure of the semiconductor gives way to discrete molecular orbital electronic states. Clusters of semiconductors in a size regime lower than 2R {where R is the exciton Bohr radius; e.g. 3 nm for CdS and 7.3 nm for CdTe) are called Quantum Dots (QD) because they confine optically excited electron- hole pairs (excitons) in all three spatial dimensions. Structures based on QD are of great interest because of fast response times and non-linearity in optical switching applications.In this paper we report the first HREM analysis of the size and structure of CdTe and CdS QD formed by precipitation from a modified borosilicate glass matrix. The glass melts were quenched by pouring on brass plates, and then annealed to relieve internal stresses. QD precipitate particles were formed during subsequent "striking" heat treatments above the glass crystallization temperature, which was determined by differential thermal analysis.

Attenuation of surface acoustic waves by quantum dots

1998 ◽  
Vol 77 (5) ◽  
pp. 1195-1202
Author(s):  
Andreas Knabchen Yehoshua, B. Levinson, Ora
Keyword(s):  
Quantum Dots ◽  
Acoustic Waves ◽  
Surface Acoustic Waves
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