Spectral properties of quantum dots influenced by a confining potential model

2012 ◽  
Vol 407 (24) ◽  
pp. 4797-4803 ◽  
Author(s):  
Sameer M. Ikhdair ◽  
Majid Hamzavi
2000 ◽  
Vol 642 ◽  
Author(s):  
M. Califano ◽  
P. Harrison

ABSTRACTA simple and versatile numerical method for electronic structure calculations in InAs pyramidal dots is presented, and its predictions compared with both theoretical and experimental data. The calculated ground state energy eigenvalues agree well with those of more sophisticated treatments which take into account band mixing and the microscopic effects of the strain distribution. The number of electron bound states predicted is in excellent agreement with very recent calculations for strained quantum dots performed in the framework of the 8-band k · p theory. Very good agreement is obtained with both the number and the energy of the peaks in several experimental photoluminescence spectra. Furthermore our ca agreement with that deduced from capacitance and photoluminescence measurements.


1987 ◽  
Vol 02 (03) ◽  
pp. 183-191 ◽  
Author(s):  
S. GHOSH ◽  
A.K. ROY ◽  
S. MUKHERJEE

The effect of the long-range confining potential on the two gluino bound states has been studied in a particular potential model. Some useful inequalities for the value of the wave function at the origin, [Formula: see text] have been derived for a more general class of potentials. The results will be useful for estimating various decay widths.


2010 ◽  
Vol 46 (4) ◽  
pp. 233-238 ◽  
Author(s):  
A. E. Raevskaya ◽  
G. Ya. Grodzyuk ◽  
A. L. Stroyuk ◽  
S. Ya. Kuchmii ◽  
V. N. Dzhagan

2000 ◽  
Vol 88 (8) ◽  
pp. 4745
Author(s):  
Akira Endoh ◽  
Yoshiki Sakuma ◽  
Motomu Takatsu ◽  
Yuji Awano ◽  
Naoki Yokoyama
Keyword(s):  

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 335-339 ◽  
Author(s):  
Minhan Chen ◽  
Wolfgang Porod

We present numerical simulations for the design of gated few-electron quantum dot structures in the Si/SiO2 material system. Because of the vicinity of the quantum dots to the exposed surface, we take special care in treating the boundary conditions at the oxide/vacuum interfaces. In our simulations, the confining potential is obtained from the Poisson equation with a Thomas-Fermi charge model. We find that the dot occupancy can be effectively controlled in the few-electron regime.


ACS Nano ◽  
2009 ◽  
Vol 3 (9) ◽  
pp. 2539-2546 ◽  
Author(s):  
Arun Narayanaswamy ◽  
L. F. Feiner ◽  
A. Meijerink ◽  
P. J. van der Zaag

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