Optical characterization of hydrogenated silicon thin films using interference technique

2000 ◽  
Vol 88 (4) ◽  
pp. 1907-1915 ◽  
Author(s):  
Tatiana Globus ◽  
Gautam Ganguly ◽  
Pere Roca i Cabarrocas
Keyword(s):  
Thin Films ◽  
Optical Characterization ◽  
Hydrogenated Silicon ◽  
Silicon Thin Films

Optical characterization of polycrystalline silicon thin films

1996 ◽  
Author(s):  
William A. McGahan ◽  
Blaine R. Spady ◽  
Blaine D. Johs ◽  
Olivier Laparra
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
Optical Characterization ◽  
Silicon Thin Films

Characterization of microcrystallinity in hydrogenated silicon thin films

1987 ◽  
Vol 155 (2) ◽  
pp. 227-242 ◽  
Author(s):  
C. Godet ◽  
B. Marchon ◽  
M.P. Schmidt
Keyword(s):  
Thin Films ◽  
Hydrogenated Silicon ◽  
Silicon Thin Films

INVESTIGATION OF THE Si:H FILMS DEPOSITED NEAR THE TRANSITION REGION FOR APPLICATION IN SOLAR CELLS

2006 ◽  
Vol 20 (27) ◽  
pp. 1739-1747 ◽  
Author(s):  
QINGSONG LEI ◽  
ZHIMENG WU ◽  
XINHUA GENG ◽  
YING ZHAO ◽  
JIANPING XI
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Transition Region ◽  
Chemical Vapor ◽  
Transition Process ◽  
Very High Frequency ◽  
Working Pressure ◽  
Hydrogenated Silicon ◽  
Silicon Thin Films ◽  
Narrow Region

Hydrogenated silicon thin films (Si:H) have been deposited by using very high-frequency plasma-enhanced chemical vapor deposition (VHF PECVD). The structural, electrical and optical properties of the films were characterized. The transition process and the effect of pressure were studied. Results suggest that a narrow region, in which the transition from microcrystalline to amorphous growth takes place, exists in the regime of silane concentration (SC). This region is influenced by the working pressure (P). At lower pressure, the transition region is shifted to higher SC. Microcrystalline silicon (μ c-Si:H ) thin films deposited near transition region was applied as i-layer to the p-i-n solar cells. An efficiency of about 5.30% was obtained.

Internal structure of mixed phase hydrogenated silicon thin films made at 39°C

2006 ◽  
Vol 89 (5) ◽  
pp. 051922 ◽  
Author(s):  
P. C. P. Bronsveld ◽  
J. K. Rath ◽  
R. E. I. Schropp ◽  
T. Mates ◽  
A. Fejfar ◽  
...  
Keyword(s):  
Thin Films ◽  
Internal Structure ◽  
Mixed Phase ◽  
Hydrogenated Silicon ◽  
Silicon Thin Films

Structural and Optical Characterization of Zinc Telluride Thin Films

2013 ◽  
Vol 665 ◽  
pp. 254-262 ◽  
Author(s):  
J.R. Rathod ◽  
Haresh S. Patel ◽  
K.D. Patel ◽  
V.M. Pathak
Keyword(s):  
Thin Films ◽  
Extinction Coefficient ◽  
Nir Spectroscopy ◽  
Optical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Evaporation Technique ◽  
Film Form ◽  
Znte Thin Films

Group II-VI compounds have been investigated largely in last two decades due to their interesting optoelectronic properties. ZnTe, a member of this family, possesses a bandgap around 2.26eV. This material is now a day investigated in thin film form due to its potential towards various viable applications. In this paper, the authors report their investigations on the preparation of ZnTe thin films using vacuum evaporation technique and their structural and optical characterizations. The structural characterization, carried out using an X-ray diffraction (XRD) technique shows that ZnTe used in present case possesses a cubic structure. Using the same data, the micro strain and dislocation density were evaluated and found to be around 1.465×10-3lines-m2and 1.639×1015lines/m2respecctively. The optical characterization carried out in UV-VIS-NIR region reveals the fact that band gap of ZnTe is around 2.2eV in present case. In addition to this, it was observed that the value of bandgap decreases as the thickness of films increases. The direct transitions of the carries are involved in ZnTe. Using the data of UV-VIS-NIR spectroscopy, the transmission coefficient and extinction coefficient were also calculated for ZnTe thin films. Besides, the variation of extinction coefficient with wavelength has also been discussed here.

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