Raman characterization of the structural evolution in amorphous and partially nanocrystalline hydrogenated silicon thin films prepared by PECVD

2011 ◽  
Vol 42 (3) ◽  
pp. 415-421 ◽  
Author(s):  
Zhi Li ◽  
Wei Li ◽  
Yadong Jiang ◽  
Haihong Cai ◽  
Yuguang Gong ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Evolution ◽  
Hydrogenated Silicon ◽  
Silicon Thin Films ◽  
Raman Characterization

Optical characterization of hydrogenated silicon thin films using interference technique

2000 ◽  
Vol 88 (4) ◽  
pp. 1907-1915 ◽  
Author(s):  
Tatiana Globus ◽  
Gautam Ganguly ◽  
Pere Roca i Cabarrocas
Keyword(s):  
Thin Films ◽  
Optical Characterization ◽  
Hydrogenated Silicon ◽  
Silicon Thin Films

Characterization of microcrystallinity in hydrogenated silicon thin films

1987 ◽  
Vol 155 (2) ◽  
pp. 227-242 ◽  
Author(s):  
C. Godet ◽  
B. Marchon ◽  
M.P. Schmidt
Keyword(s):  
Thin Films ◽  
Hydrogenated Silicon ◽  
Silicon Thin Films

INVESTIGATION OF THE Si:H FILMS DEPOSITED NEAR THE TRANSITION REGION FOR APPLICATION IN SOLAR CELLS

2006 ◽  
Vol 20 (27) ◽  
pp. 1739-1747 ◽  
Author(s):  
QINGSONG LEI ◽  
ZHIMENG WU ◽  
XINHUA GENG ◽  
YING ZHAO ◽  
JIANPING XI
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Transition Region ◽  
Chemical Vapor ◽  
Transition Process ◽  
Very High Frequency ◽  
Working Pressure ◽  
Hydrogenated Silicon ◽  
Silicon Thin Films ◽  
Narrow Region

Hydrogenated silicon thin films (Si:H) have been deposited by using very high-frequency plasma-enhanced chemical vapor deposition (VHF PECVD). The structural, electrical and optical properties of the films were characterized. The transition process and the effect of pressure were studied. Results suggest that a narrow region, in which the transition from microcrystalline to amorphous growth takes place, exists in the regime of silane concentration (SC). This region is influenced by the working pressure (P). At lower pressure, the transition region is shifted to higher SC. Microcrystalline silicon (μ c-Si:H ) thin films deposited near transition region was applied as i-layer to the p-i-n solar cells. An efficiency of about 5.30% was obtained.

Internal structure of mixed phase hydrogenated silicon thin films made at 39°C

2006 ◽  
Vol 89 (5) ◽  
pp. 051922 ◽  
Author(s):  
P. C. P. Bronsveld ◽  
J. K. Rath ◽  
R. E. I. Schropp ◽  
T. Mates ◽  
A. Fejfar ◽  
...  
Keyword(s):  
Thin Films ◽  
Internal Structure ◽  
Mixed Phase ◽  
Hydrogenated Silicon ◽  
Silicon Thin Films

Raman characterization of Bi12SiO20 thin films obtained by pulsed laser deposition

1997 ◽  
Vol 109-110 ◽  
pp. 359-361 ◽  
Author(s):  
J.C. Alonso ◽  
R. Diamant ◽  
E. Haro-Poniatowski ◽  
M. Fernández-Guasti ◽  
G. Muñoz ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Raman Characterization

Structural Evolution Upon Annealing of Multi-Layer Si/Fe Thin Films Prepared by Magnetron Sputtering

2007 ◽  
Vol 561-565 ◽  
pp. 1161-1164
Author(s):  
Xiao Na Li ◽  
Bing Hu ◽  
Chuang Dong ◽  
Xin Jiang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Structural Evolution ◽  
Radio Frequency Magnetron Sputtering ◽  
Transmission Electron ◽  
Direct Band ◽  
The Stability ◽  
Sputtering System

Fe/Si multi-layer films were fabricated on Si (100) substrates utilizing radio frequency magnetron sputtering system. Si/β-FeSi2 structure was found in the films after the deposition. Structural characterization of Fe-silicide sample was performed by transmission electron microscopy, to explore the dependence of the microstructure of β-FeSi2 film on the preparation parameters. It was found that β-FeSi2 particles were formed after the deposition without annealing, whose size is less than 20nm ,with a direct band-gap of 0.94eV in room temperature. After annealing at 850°C, particles grow lager, however the stability of thin films was still good.

XRD and micro Raman characterization of epitaxial Bi-2201, Bi-2212 and Bi-2223 thin films

1997 ◽  
Vol 282-287 ◽  
pp. 583-584 ◽  
Author(s):  
M. Holiastou ◽  
N. Poulakis ◽  
D. Palles ◽  
E. Liarokapis ◽  
D. Niarchos ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Characterization
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