Dependence of Al layer growth mode on Cr underlayer thickness in molecular-beam epitaxy of (001) Al/Cr superlattices

2000 ◽  
Vol 88 (4) ◽  
pp. 1838-1843 ◽  
Author(s):  
Toshiki Kingetsu ◽  
Yasuhiro Kamada ◽  
Masahiko Yamamoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Layer Growth ◽  
Growth Mode

Epitaxial Solid-Solution Films of Immiscible MgO and CaO

1994 ◽  
Vol 341 ◽  
Author(s):  
E. S. Hellman ◽  
E. H. Hartford
Keyword(s):  
Solid Solution ◽  
Molecular Beam Epitaxy ◽  
Lattice Constant ◽  
Solid Solutions ◽  
Molecular Beam ◽  
Building Blocks ◽  
Layer Growth ◽  
Growth Mode ◽  
Miscibility Gap ◽  
Layer By Layer

AbstractMetastable solid-solutions in the MgO-CaO system grow readily on MgO at 300°C by molecular beam epitaxy. We observe RHEED oscillations indicating a layer-by-layer growth mode; in-plane orientation can be described by the Matthews theory of island rotations. Although some films start to unmix at 500°C, others have been observed to be stable up to 900°C. The Mgl-xCaxO solid solutions grow despite a larger miscibility gap in this system than in any system for which epitaxial solid solutions have been grown. We describe attempts to use these materials as adjustable-lattice constant epitaxial building blocks

Elementary Processes in Molecular Beam Epitaxy Studied by in situ Scanning Electron Microscopy

1998 ◽  
Vol 05 (03n04) ◽  
pp. 881-897 ◽  
Author(s):  
N. Inoue
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nucleation And Growth ◽  
Layer Growth ◽  
Growth Mode ◽  
Propagation Mode ◽  
Scanning Electron

The recent advancement in the in situ scanning electron microscopy of molecular beam epitaxy of GaAs is reviewed. The topics include two-dimensional (2D) nucleation and growth, three-dimensional (3D) roughening processes, 2D-to-step-propagation growth mode change and annealing processes after growth. In the nucleation-and-growth mode, delayed island nucleation and nonlinear change of surface coverage are found. The mechanism of delayed nucleation is discussed in terms of site-dependent successive atomic layer growth processes. It is shown that under a critical growth condition between the 2D mode and the step propagation mode, the local growth mode changes from the 2D mode to the step propagation mode. It is found that there are three types of surface roughening, or onset of 3D growth. A 3D/2D/1D growth mode phase diagram is obtained. Some of the results are compared with the growth of Si on (111) surface. The behavior of monolayer-deep holes during postgrowth annealing is observed. It is found that some holes are left for a long time and form big holes with each other. They extend in the [110] direction but, at the same time, shrink in the [1-10] direction. Finally, they shrink in both directions and disappear .It takes about 10 min for all the holes to disappear. Related work by other authors is briefly described.

GaSb layers with low defect density deposited on (001) GaAs substrate in two-dimensional growth mode using molecular beam epitaxy

2019 ◽  
Vol 19 (4) ◽  
pp. 542-547
Author(s):  
Agata Jasik ◽  
Iwona Sankowska ◽  
Andrzej Wawro ◽  
Jacek Ratajczak ◽  
Dariusz Smoczyński ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Defect Density ◽  
Growth Mode ◽  
Two Dimensional ◽  
Dimensional Growth

Growth mode and strain relaxation of InAs on InP (111)A grown by molecular beam epitaxy

1999 ◽  
Vol 74 (10) ◽  
pp. 1388-1390 ◽  
Author(s):  
Hanxuan Li ◽  
Theda Daniels-Race ◽  
Zhanguo Wang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Growth Mode

ECR-MBE and GSMBE of Gallium nitride on Si(111)

1995 ◽  
Vol 395 ◽  
Author(s):  
U. Rossner ◽  
J.-L. Rouviere ◽  
A. Bourret ◽  
A. Barski
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Deep Level ◽  
High Energy ◽  
Emission Peak ◽  
Growth Mode ◽  
Cross Sectional ◽  
Dimensional Growth

ABSTRACTElectron Cyclotron Resonance Plasma Assisted Molecular Beam Epitaxy (ECR-MBE) and Gas Source Molecular Beam Epitaxy (GSMBE) have been used to grow hexagonal GaN on Si (111). In the ECR-MBE configuration high purity nitrogen has been used as nitrogen source. In GSMBE ammonia was supplied directly to the substrate to be thermally cracked in the presence of gallium.By a combined application of in-situ reflection high-energy electron-diffraction (RHEED) and cross-sectional transmission electron microscopy (TEM) the growth mode and structure of GaN were determined. The growth mode strongly depends on growth conditions. Quasi two dimensional growth was observed in ECR-MBE configuration for a substrate temperature of 640°C while three dimensional growth occured in GSMBE configuration in the temperature range from 640 to 800°C.Low temperature (9 K) photoluminescence spectra show that for samples grown by ECR-MBE and GSMBE a strong near band gap emission peak dominates while transitions due to deep level states are hardly detectable. The best optical results (the highest near band gap emission peak intensity) have been observed for samples grown by GSMBE at high temperature (800°C). This could be explained by the increase of grain dimensions (up to 0,3 – 0,5 μm) observed in samples grown by GSMBE at 800°C.

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