scholarly journals Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition

2000 ◽  
Vol 88 (4) ◽  
pp. 1983-1986 ◽  
Author(s):  
Tamotsu Hashizume ◽  
Egor Alekseev ◽  
Dimitris Pavlidis ◽  
Karim S. Boutros ◽  
Joan Redwing
Keyword(s):  
Chemical Vapor Deposition ◽  
Sapphire Substrate ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metal Insulator ◽  
Semiconductor Structures ◽  
Capacitance Voltage ◽  
Metalorganic Chemical

Preparation and Characterization of RuOxThin Films by Liquid Delivery Metalorganic Chemical Vapor Deposition

2004 ◽  
Vol 43 (5A) ◽  
pp. 2667-2671 ◽  
Author(s):  
Kyoung-Won Kim ◽  
Nam-Soo Kim ◽  
Hyung-Gyoo Lee ◽  
Yeong-Seuk Kim ◽  
Hee-Jae Kang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical ◽  
Liquid Delivery

Fabrication/Characterization of a Pseudomorphic Ga0.1In0.9P/InP MESFET

1993 ◽  
Vol 300 ◽  
Author(s):  
M. S. Feng ◽  
Y. M. Hsin ◽  
C. H. Wu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Energy Gap ◽  
Chemical Vapor ◽  
Drain Current ◽  
Low Pressure ◽  
Inp Substrate ◽  
Metalorganic Chemical

ABSTRACTA pseudomorphic Ga0.1In0.9P/InP MESFET grown by low pressure metalorganic chemical vapor deposition(LP-MOCVD) has been fabricated and characterized. The results indicated a transconductance of 66.7 ms/mm and a saturation drain current (Idss) of 55.6 mA have been achieved; furthermore, the Schottky barrier on InGaP as high as 0.67eV can be obtained using Pt2Si as the gate material. For comparison, a conventional InP MESFET with 5μm gate length has also been fabricated on InP epitaxial layer grown by low pressure metalorganic chemical vapor deposition on Fe-doped semi-insulating InP substrate. The transconductance and Idss were found to be 46.7 mS/mm and 43.1 mA at zero gate, respectively, for the depletion mode n-channel MESFET with Au as the gate metal; whereas, for the MESFET using Pt2Si as the gate metal, a transconductance of 40.3 mS/mm and a saturation drain current of 41.1 mA at zero gate bias have been obtained. The results indicated that Ga0.1In0.9P/lnP MESFET has better performance than InP MESFET because of higher energy gap of Ga0.1In0.9P.

Preparation and characterization of single crystalline anatase TiO2 films on LSAT (001) by MOCVD

RSC Advances ◽  
2016 ◽  
Vol 6 (6) ◽  
pp. 4867-4871 ◽  
Author(s):  
Mingxian Wang ◽  
Weiguang Wang ◽  
Zhao Li ◽  
Xuejian Du ◽  
Xianjin Feng ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Anatase Tio2 ◽  
Tio2 Films ◽  
Anatase Structure ◽  
Metalorganic Chemical

TiO2 thin films with anatase structure have been prepared on [LaAlO3]0.3[SrAl0.5Ta0.5O3]0.7 (LSAT) (001) substrates by metalorganic chemical vapor deposition (MOCVD) in the substrate temperature range of 500–650 °C.

Effect of Slight Misorientation of Sapphire Substrate on Metalorganic Chemical Vapor Deposition Growth of GaN

1999 ◽  
Vol 38 (Part 2, No. 7A) ◽  
pp. L703-L705 ◽  
Author(s):  
Takayuki Yuasa ◽  
Yoshihiro Ueta ◽  
Yuhzoh Tsuda ◽  
Atushi Ogawa ◽  
Mototaka Taneya ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Sapphire Substrate ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Metalorganic Chemical
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