Room-temperature negative differential resistance in nanoscale molecular junctions

J. Chen; W. Wang; M. A. Reed; A. M. Rawlett; D. W. Price; J. M. Tour

doi:10.1063/1.1289650

Room-temperature negative differential resistance in nanoscale molecular junctions

Applied Physics Letters ◽

10.1063/1.1289650 ◽

2000 ◽

Vol 77 (8) ◽

pp. 1224-1226 ◽

Cited By ~ 361

Author(s):

J. Chen ◽

W. Wang ◽

M. A. Reed ◽

A. M. Rawlett ◽

D. W. Price ◽

...

Keyword(s):

Negative Differential Resistance ◽

Room Temperature ◽

Differential Resistance ◽

Molecular Junctions

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Room-Temperature Negative Differential Resistance in Amorphous Carbon: The Role of Electron Trapping Defects at Device Interfaces

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3044021 ◽

2020 ◽

pp. 1-6

Author(s):

Phuong Y. Le ◽

Amanda Gazzana ◽

Billy J. Murdoch ◽

Dougal G. McCulloch ◽

David R. McKenzie ◽

...

Keyword(s):

Amorphous Carbon ◽

Negative Differential Resistance ◽

Room Temperature ◽

Differential Resistance ◽

Electron Trapping

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Current-induced forces: a new mechanism to induce negative differential resistance and current-switching effect in molecular junctions

Nanotechnology ◽

10.1088/0957-4484/26/48/485703 ◽

2015 ◽

Vol 26 (48) ◽

pp. 485703 ◽

Cited By ~ 1

Author(s):

Lei Gu ◽

Hua-Hua Fu

Keyword(s):

Negative Differential Resistance ◽

Differential Resistance ◽

Molecular Junctions ◽

Switching Effect ◽

Current Switching

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A GSMBE grown GaInP/GaAs narrow base DHBT exhibiting N-shape negative differential resistance with variable peak-to-valley current ratio up to 1/spl times/10/sup 7/ at room temperature

IEEE Electron Device Letters ◽

10.1109/55.285373 ◽

1994 ◽

Vol 15 (2) ◽

pp. 60-62 ◽

Cited By ~ 19

Author(s):

S.S. Lu ◽

Y.J. Wang

Keyword(s):

Negative Differential Resistance ◽

Room Temperature ◽

Differential Resistance ◽

Current Ratio ◽

Narrow Base

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Light-controllable room temperature negative differential resistance in deep-trench type nitride–oxide tunneling device and its applications

Applied Physics Letters ◽

10.1063/1.1476959 ◽

2002 ◽

Vol 80 (18) ◽

pp. 3271-3273 ◽

Cited By ~ 2

Author(s):

Fen Chen ◽

Baozhen Li ◽

Kai D Feng

Keyword(s):

Negative Differential Resistance ◽

Room Temperature ◽

Differential Resistance ◽

Deep Trench ◽

Nitride Oxide

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Tunable Negative Differential Resistance in van der Waals Heterostructures at Room Temperature by Tailoring the Interface

ACS Nano ◽

10.1021/acsnano.9b03342 ◽

2019 ◽

Vol 13 (7) ◽

pp. 8193-8201 ◽

Cited By ~ 14

Author(s):

Sidi Fan ◽

Quoc An Vu ◽

Sanghyub Lee ◽

Thanh Luan Phan ◽

Gyeongtak Han ◽

...

Keyword(s):

Negative Differential Resistance ◽

Room Temperature ◽

Van Der Waals ◽

Differential Resistance ◽

Van Der Waals Heterostructures

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Controlling Phase‐Coherent Electron Transport in III‐Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures

Advanced Functional Materials ◽

10.1002/adfm.202007216 ◽

2020 ◽

pp. 2007216

Author(s):

Ding Wang ◽

Zhaoying Chen ◽

Juan Su ◽

Tao Wang ◽

Baoqing Zhang ◽

...

Keyword(s):

Electron Transport ◽

Negative Differential Resistance ◽

Room Temperature ◽

Differential Resistance ◽

Double Barrier

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Room temperature negative differential resistance in molecular nanowires

Journal of Materials Chemistry ◽

10.1039/b203047k ◽

2002 ◽

Vol 12 (10) ◽

pp. 2927-2930 ◽

Cited By ~ 62

Author(s):

Irena Kratochvilova ◽

Milan Kocirik ◽

Adriana Zambova ◽

Jeremiah Mbindyo ◽

Thomas E. Mallouk ◽

...

Keyword(s):

Negative Differential Resistance ◽

Room Temperature ◽

Differential Resistance

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Solvent-induced current-voltage hysteresis and negative differential resistance in molecular junctions

Physical Review B ◽

10.1103/physrevb.85.033408 ◽

2012 ◽

Vol 85 (3) ◽

Cited By ~ 11

Author(s):

Alan A. Dzhioev ◽

D. S. Kosov

Keyword(s):

Negative Differential Resistance ◽

Differential Resistance ◽

Molecular Junctions ◽

Induced Current ◽

Current Voltage ◽

Voltage Hysteresis

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Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD

Active and Passive Electronic Components ◽

10.1080/08827510213497 ◽

2002 ◽

Vol 25 (3) ◽

pp. 245-248

Author(s):

K. F. Yarn

Keyword(s):

Schottky Diode ◽

Negative Differential Resistance ◽

Room Temperature ◽

Thermionic Emission ◽

Differential Resistance ◽

Tunneling Effect ◽

Peak Current Density ◽

Interband Tunneling ◽

First Time ◽

Peak To Valley Ratio

An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of1KA/cm2were achieved at room temperature. In addition, the maximum available power is estimated up to5W/cm2. The mechanism for such performance is phenomenologically analyzed by the combination of resonant interband tunneling (RIT) and thermionic emission processes associated with tunneling effect on the metal-semiconductor (MS) interface.

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