High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n-GaN/sapphire (0001): Doping dependence

2000 ◽  
Vol 88 (6) ◽  
pp. 3295-3300 ◽  
Author(s):  
D. I. Florescu ◽  
V. M. Asnin ◽  
Fred H. Pollak ◽  
R. J. Molnar ◽  
C. E. C. Wood
Keyword(s):  
Thermal Conductivity ◽  
Raman Spectroscopy ◽  
Spatial Resolution ◽  
Vapor Phase ◽  
High Spatial Resolution ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Doping Dependence

Plasma-Induced Effects on The Thermal Conductivity of Hydride Vapor Phase Epitaxy Grown n-GaN/Sapphire (0001)

2000 ◽  
Vol 639 ◽  
Author(s):  
D.I. Florescu ◽  
Fred H. Pollak ◽  
William B. Lanfor ◽  
Farid Khan ◽  
I. Adesida ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Vapor Phase ◽  
High Power ◽  
Gas Flow ◽  
Depth Resolution ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Processing Parameter ◽  
Ar Gas ◽  
Spatial Depth

ABSTRACTWe have measured high spatial/depth resolution (2-3 [.proportional]m) thermal conductivity (κk) at 300K before and after plasma-induced effects on a series of n-GaN/sapphire (0001) samples fabricated by hydride vapor phase epitaxy (HVPE) using a ThermoMicroscope'as scanning thermal microscope (SThM). The sample thicknesses were 50 ± 5 [.proportional]m and the carrier concentrations ~ 8 × 1016 cm-3, as determined by Hall effect measurements. The thermal conductivity before treatment was found to be in the 1.70 – 1.75 W/cm-K range, similar to that previously reported for HVPE material with this carrier concentration and thickness [D. I. Florescu et al., J. Appl. Phys. 88, 3295 (2000)]. The samples were processed under constant Ar gas flow and pressure fora fixed period of time (5 min). The only variable processing parameter was the DC bias voltage (125 – 500 V). After the initial 125 V procedure κ exhibited a decrease linear in the DC voltage in the investigated range. At 125 V the thermal conductivity was only slightly less (κ ~ 1.65 W/cm-K) than the untreated case. κ had dropped to ~ 0.3 W/cm-K for the 500 V situation. The implications of these results for device applications in the area of high power opto-electronics and high power electronics will be discussed.

Raman spectroscopy of GaN nucleation and free-standing layers grown by hydride vapor phase epitaxy on oxidized silicon

2003 ◽  
Vol 83 (4) ◽  
pp. 629-631 ◽  
Author(s):  
E. V. Konenkova ◽  
Yu. V. Zhilyaev ◽  
V. A. Fedirko ◽  
D. R. T. Zahn
Keyword(s):  
Raman Spectroscopy ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Free Standing

Doping Dependence of the Thermal Conductivity of Hydride Vapor Phase Epitaxy Grown n-GaN/Sapphire (0001) Using a Scanning Thermal Microscope

1999 ◽  
Vol 595 ◽  
Author(s):  
D.I. Florescu ◽  
V.A. Asnin ◽  
L.G. Mourokh ◽  
Fred H. Pollak ◽  
R. J. Molnar
Keyword(s):  
Thermal Conductivity ◽  
Vapor Phase ◽  
Room Temperature ◽  
Doping Concentration ◽  
Phonon Scattering ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Electronic Contribution ◽  
Free Electrons ◽  
Lattice Component

AbstractWe have measured the doping concentration dependence of the room temperature thermal conductivity (κ) of two series of n-GaN/sapphire (0001) fabricated by hydride vapor phase epitaxy (HVPE). In both sets n decreased linearly with log n, the variation being about a factor two decrease in κ for every decade increase in n. κ ≈ 1.95 W/cm-K was obtained for one of the most lightly doped samples (n = 6.9×1016 cm−3), higher than the previously reported κ ≈ 1.7-1.8 W/cm-K on lateral epitaxial overgrown material [V.A. Asnin et al, Appl. Phys. Lett. 75, 1240 (1999)] and κ κ 1.3 W/cm-K on a thick HVPE sample [E.K. Sichel and J.I. Pankove, J. Phys. Chem. Solids 38, 330 (1977)]. The decrease in the lattice component of κ due to increased phonon scattering from both the impurities and free electrons outweighs the increase in the electronic contribution to κ.

scholarly journals Doping Dependence Of The Thermal Conductivity Of Hydride Vapor Phase Epitaxy Grown n-GaN/Sapphire (0001) Using A Scanning Thermal Microscope

2000 ◽  
Vol 5 (S1) ◽  
pp. 336-342 ◽  
Author(s):  
D.I. Florescu ◽  
V.A. Asnin ◽  
L.G. Mourokh ◽  
Fred H. Pollak ◽  
R. J. Molnar
Keyword(s):  
Thermal Conductivity ◽  
Vapor Phase ◽  
Room Temperature ◽  
Doping Concentration ◽  
Phonon Scattering ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Electronic Contribution ◽  
Free Electrons ◽  
Lattice Component

We have measured the doping concentration dependence of the room temperature thermal conductivity (κ) of two series of n-GaN/sapphire (0001) fabricated by hydride vapor phase epitaxy (HVPE). In both sets κ decreased linearly with log n, the variation being about a factor two decrease in κ for every decade increase in n. κ ≈ 1.95 W/cm-K was obtained for one of the most lightly doped samples (n = 6.9×1016 cm−3), higher than the previously reported κ ≈ 1.7-1.8 W/cm-K on lateral epitaxial overgrown material [V.A. Asnin et al, Appl. Phys. Lett. 75, 1240 (1999)] and κ ≈ 1.3 W/cm-K on a thick HVPE sample [E.K. Sichel and J.I. Pankove, J. Phys. Chem. Solids 38, 330 (1977)]. The decrease in the lattice component of κ due to increased phonon scattering from both the impurities and free electrons outweighs the increase in the electronic contribution to κ.

Growth of GaN Nanorods by a Hydride Vapor Phase Epitaxy Method

2002 ◽  
Vol 14 (13-14) ◽  
pp. 991-993 ◽  
Author(s):  
H.-M. Kim ◽  
D.S. Kim ◽  
Y.S. Park ◽  
D.Y. Kim ◽  
T.W. Kang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Control of Surface Morphology during the Growth of (110)-Oriented GaAs by Hydride Vapor Phase Epitaxy

2021 ◽  
Author(s):  
Wondwosen Metaferia ◽  
Anna K. Braun ◽  
John Simon ◽  
Corinne E. Packard ◽  
Aaron J. Ptak ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy
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