Epitaxial Bi3Fe5O12(001) films grown by pulsed laser deposition and reactive ion beam sputtering techniques

2000 ◽  
Vol 88 (5) ◽  
pp. 2734-2739 ◽  
Author(s):  
N. Adachi ◽  
V. P. Denysenkov ◽  
S. I. Khartsev ◽  
A. M. Grishin ◽  
T. Okuda
1995 ◽  
Vol 388 ◽  
Author(s):  
James A. Greer ◽  
M. D. Tabat

AbstractOver the past few years Pulsed Laser Deposition (PLD) has become a popular technique for the deposition of a wide variety of thin films, and PLD systems are currently found in numerous industrial, government, university, and military laboratories. At present, it is estimated that well over 200 different materials have been deposited by PLD and the list keeps growing. However, even with all the interest in laser deposition the technique has not yet emerged as an industrial process. At the moment, industry still prefers standard thin film growth techniques such as magnetron and ion beam sputtering, chemical vapor deposition, and electron beam evaporation for production applications. These processes have been in use for decades and have demonstrated the ability to deposit films of most materials over large areas with excellent uniformity at reasonable cost and deposition rates. Furthermore, an entire infrastructure has been built up to support these processes including standardization of deposition rate monitors, power sources, target and crucible sizes, etc. On the other hand, laser-deposition is still an emerging technology, and relatively little infrastructure exists to adequately support either research or industrial applications. Since there are several materials which are difficult if not impossible to grow in thin-film form by more conventional techniques, it is expected that as pulsed laser-deposition matures this unique process will take its rightful place on the manufacturing line.


2000 ◽  
Vol 636 ◽  
Author(s):  
Richard F. Haglund ◽  
Robert A. Weller ◽  
Cynthia E. Heiner ◽  
Matthew D. McMahon ◽  
Robert H. Magruder ◽  
...  

AbstractWe describe recent experiments in which we attempted the initial steps for fabricating twodimensional arrays of metal nanocrystals. We use a commercial pulsed-laser deposition system in concert with a focused ion beam to attempt control over both lateral and vertical dimensions at the nanometer length scale. In our experiments, regular arrays of holes typically 80 nm in diameter were drilled in Si substrates using the focused ion beam. Silver atoms were then deposited onto these substrates by pulsed laser evaporation from a metallic target in high vacuum. Under certain conditions of substrate temperature, laser pulse repetition rate, and fluence, small silver nanoclusters form preferentially around the structures previously etched in the silicon surfaces by the focused ion beam.


2005 ◽  
Vol 97 (2) ◽  
pp. 023512 ◽  
Author(s):  
M. Khanlary ◽  
P. Townsend ◽  
B. Ullrich ◽  
D. E. Hole

1993 ◽  
Vol 327 ◽  
Author(s):  
Randolph E. Treece ◽  
James S. Horwitz ◽  
Douglas B. Chrisey

AbstractThin films of diamond and diamond-like carbon (DLC) are technologically important materials that serve as hard, scratch resistant and chemically inert coatings for tools and optics. Recent calculations suggest that β-C3N4 should be harder than diamond. We have deposited carbon nitride (CNx) thin films by pulsed laser deposition. The films were grown from a graphite target in a nitrogen background. The nitrogen source was either (a) a N2 gas atmosphere, or (b) a N2+/N+ ion beam generated by a Kaufman ion gun. A wide range of deposition parameters were investigated, such as deposition pressure (0.3-900 mTorr N2), substrate temperature (50 and 600°C), and laser fluence (1-4 J/cm2) and laser repetition rate (1-10 Hz). The films have been characterized by Rutherford Backscattering Spectroscopy, thin-film X-ray diffraction, scanning electron microscopy, and micro-Raman spectroscopy. In general, the films were nitrogen deficient with a maximum nitrogen to carbon ratio (N/C) of 0.45 and a shift in the G band Raman peak consistent with amorphous CNx (a-CNx).


2008 ◽  
Vol 103 (2) ◽  
pp. 024902 ◽  
Author(s):  
A. A. Voevodin ◽  
J. G. Jones ◽  
J. S. Zabinski ◽  
A. R. Waite

1993 ◽  
Vol 311 ◽  
Author(s):  
D.D. Medlin ◽  
T.T. Friedmann ◽  
P.P. Mirkarimi ◽  
K.K. Mccarty ◽  
M.M. Mills

ABSTRACTWe present a microstructural study of boron nitride films grown by ion-assisted pulsed laser deposition. Fourier transform infra-red spectroscopy, electron energy loss spectroscopy, and electron diffraction measurements indicate that within the irradiated region of the substrate, the film consists of high fraction of cBN with a small amount of the turbostratic phase; outside of the irradiated region, only the turbostratic phase is detected. Conventional and high resolution electron microscopic observations of the boron nitride microstructure indicate that the cBN is in the form of twinned crystallites, up to 30 nm in diameter. We also observe particulates, formed by the laser pulse, that reduce the yield of cBN in the irradiated regions by shadowing local areas from the ion beam.


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