Investigation of deep levels in rapid thermally annealed SiO2-capped n-GaAs grown by metal-organic chemical vapor deposition
1999 ◽
Vol 38
(Part 1, No. 5A)
◽
pp. 2835-2836
2000 ◽
Vol 7
(1)
◽
pp. 12
2021 ◽
Vol 15
(6)
◽
pp. 2170024