Conductance quantization in nanoscale vertical structure silicon field-effect transistors with a wrap gate

2000 ◽  
Vol 76 (20) ◽  
pp. 2922-2924 ◽  
Author(s):  
K. Nishiguchi ◽  
S. Oda
Keyword(s):  
Field Effect ◽  
Vertical Structure ◽  
Field Effect Transistors ◽  
Conductance Quantization

scholarly journals Synthesis and characterization of Ge-core/a-Si-shell nanowires with conformal shell thickness deposited after gold removal for high-mobility p-channel field-effect transistors

2020 ◽  
Vol 2 (4) ◽  
pp. 1465-1472
Author(s):  
Marolop Dapot Krisman Simanullang ◽  
G. Bimananda M. Wisna ◽  
Koichi Usami ◽  
Shunri Oda
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Shell Thickness ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Conductance Quantization ◽  
Mode Field ◽  
Multi Mode ◽  
Shell Nanowires

Demonstration of high-performance p-channel depletion mode field-effect transistors and conductance quantization of multi-mode ballistic Ge-core/a-Si shell nanowires.

Air-Stable n-Channel Organic Single-Crystal Field-Effect Transistors

2008 ◽  
Author(s):  
Takafumi Uemura ◽  
Masakazu Yamagishi ◽  
Yukihiro Tominari ◽  
Jun Takeya
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Crystal Field Effect ◽  
Organic Single Crystal

Organic Three-dimensional Field-effect Transistors

2008 ◽  
Author(s):  
M. Uno ◽  
I. Doi ◽  
K. Takimiya ◽  
Jun Takeya
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Three Dimensional
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