scholarly journals Synthesis and characterization of Ge-core/a-Si-shell nanowires with conformal shell thickness deposited after gold removal for high-mobility p-channel field-effect transistors

2020 ◽  
Vol 2 (4) ◽  
pp. 1465-1472
Author(s):  
Marolop Dapot Krisman Simanullang ◽  
G. Bimananda M. Wisna ◽  
Koichi Usami ◽  
Shunri Oda
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Shell Thickness ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Conductance Quantization ◽  
Mode Field ◽  
Multi Mode ◽  
Shell Nanowires

Demonstration of high-performance p-channel depletion mode field-effect transistors and conductance quantization of multi-mode ballistic Ge-core/a-Si shell nanowires.

Pyrene fused perylene diimides: synthesis, characterization and applications in organic field-effect transistors and optical limiting with high performance

2015 ◽  
Vol 51 (33) ◽  
pp. 7156-7159 ◽  
Author(s):  
Xuejun Zhan ◽  
Ji Zhang ◽  
Sheng Tang ◽  
Yuxuan Lin ◽  
Min Zhao ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Optical Limiting ◽  
Organic Field Effect Transistors ◽  
Perylene Diimides

Pyrene fused PDI derivatives are unprecedentedly designed, with the bilateral one possessing a high mobility up to 1.13 cm2 V−1 s−1.

Thin film field-effect transistors of 2,6-diphenyl anthracene (DPA)

2015 ◽  
Vol 51 (59) ◽  
pp. 11777-11779 ◽  
Author(s):  
Jie Liu ◽  
Huanli Dong ◽  
Zongrui Wang ◽  
Deyang Ji ◽  
Changli Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Synthesis And Characterization ◽  
Design Synthesis

The present work showed the design, synthesis and characterization of a high performance anthracene-based semiconductor.

scholarly journals Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors

2018 ◽  
Vol 9 (1) ◽  
pp. 2 ◽  
Author(s):  
Sooji Nam ◽  
Yong Jeong ◽  
Joo Kim ◽  
Hansol Yang ◽  
Jaeyoung Jang
Keyword(s):  
Graphene Oxide ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Operating Voltage ◽  
Organic Field Effect Transistors ◽  
Gate Leakage

Here, we report on the use of a graphene oxide (GO)/polystyrene (PS) bilayer as a gate dielectric for low-voltage organic field-effect transistors (OFETs). The hydrophilic functional groups of GO cause surface trapping and high gate leakage, which can be overcome by introducing a layer of PS—a hydrophobic polymer—onto the top surface of GO. The GO/PS gate dielectric shows reduced surface roughness and gate leakage while maintaining a high capacitance of 37.8 nF cm−2. The resulting OFETs show high-performance operation with a high mobility of 1.05 cm2 V−1 s−1 within a low operating voltage of −5 V.

All-Semiconducting Nanotube Networks: Towards High Performance Printed Nanoelectronics

2011 ◽  
Vol 1283 ◽  
Author(s):  
N. Rouhi ◽  
D. Jain ◽  
K. Zand ◽  
P. J. Burke
Keyword(s):  
Electronic Properties ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Critical Issue ◽  
Channel Length ◽  
Junction Resistance ◽  
Semiconducting Nanotubes ◽  
Ink Formulation

ABSTRACTIn this work, we present progress towards devices fabrication using all semiconducting nanotubes as the starting material. Individual nanotubes are known to have intrinsic mobility of more than 10,000 cm2/V-s but using a network of nanotubes will decrease this mobility because of tube-tube screening effect and junction resistance. Here we are using solution-based deposition of purified 99% semiconducting single-walled nanotubes as the channel in field effect transistors. DC analysis of devices’ characterization shows a high mobility, more than 50 cm2/Vs, and good on/off ratio in the range of more than 103 and 104. A critical issue is the ink formulation and dependence of electronic properties on the nanotube density after deposition. In addition, the channel length also plays an important role in controlling both mobility and on/off ratio.

Synthesis and characterization of carbazolo[2,1-a]carbazole in thin film and single crystal field-effect transistors

2017 ◽  
Vol 5 (28) ◽  
pp. 7020-7027 ◽  
Author(s):  
Miriam Más-Montoya ◽  
José Pedro Cerón-Carrasco ◽  
Shino Hamao ◽  
Ritsuko Eguchi ◽  
Yoshihiro Kubozono ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Synthesis And Characterization ◽  
Organic Field Effect Transistors ◽  
Crystal Field Effect

Carbazole-based azaphenacene with high performance in organic field-effect transistors.

Undoped and catalyst-free germanium nanowires for high-performance p-type enhancement-mode field-effect transistors

2016 ◽  
Vol 4 (22) ◽  
pp. 5102-5108 ◽  
Author(s):  
Marolop Simanullang ◽  
G. Bimananda M. Wisna ◽  
Koichi Usami ◽  
Wei Cao ◽  
Yukio Kawano ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Experimental Demonstration ◽  
Germanium Nanowires ◽  
Enhancement Mode ◽  
Catalyst Free ◽  
Mode Field ◽  
P Type

The experimental demonstration of high-performance p-type enhancement-mode field-effect transistors fabricated from undoped and catalyst-free germanium nanowires.

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