scholarly journals Effect of dopant atoms on the roughness of III–V semiconductor cleavage surfaces

2000 ◽  
Vol 76 (3) ◽  
pp. 300-302 ◽  
Author(s):  
P. Quadbeck ◽  
Ph. Ebert ◽  
K. Urban ◽  
J. Gebauer ◽  
R. Krause-Rehberg
Keyword(s):  
Dopant Atoms

Effects of dopant concentration on the microstructure of tin- doped indium oxide thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 716-717
Author(s):  
I. A. Rauf
Keyword(s):  
Thin Films ◽  
Indium Oxide ◽  
Ionic Radius ◽  
Free Carrier ◽  
Electron Gun ◽  
Periodic Lattice ◽  
Oxide Thin Films ◽  
Transmission Electron ◽  
The Difference ◽  
Dopant Atoms

To understand the electronic conduction mechanism in Sn-doped indium oxide thin films, it is important to study the effect of dopant atoms on the neighbouring indium oxide lattice. Ideally Sn is a substitutional dopant at random indium sites. The difference in valence (Sn4+ replaces In3+) requires that an extra electron is donated to the lattice and thus contributes to the free carrier density. But since Sn is an adjacent member of the same row in the periodic table, the difference in the ionic radius (In3+: 0.218 nm; Sn4+: 0.205 nm) will introduce a strain in the indium oxide lattice. Free carrier electron waves will no longer see a perfect periodic lattice and will be scattered, resulting in the reduction of free carrier mobility, which will lower the electrical conductivity (an undesirable effect in most applications).One of the main objectives of the present investigation is to understand the effects of the strain (produced by difference in the ionic radius) on the microstructure of the indium oxide lattice when the doping level is increased to give high carrier densities. Sn-doped indium oxide thin films were prepared with four different concentrations: 9, 10, 11 and 12 mol. % of SnO2 in the starting material. All the samples were prepared at an oxygen partial pressure of 0.067 Pa and a substrate temperature of 250°C using an Edwards 306 coating unit with an electron gun attachment for heating the crucible. These deposition conditions have been found to give optimum electrical properties in Sn-doped indium oxide films. A JEOL 2000EX transmission electron microscope was used to investigate the specimen microstructure.

scholarly journals Effect of the number of nitrogen dopants on the electronic and magnetic properties of graphitic and pyridinic N-doped graphene – a density-functional study

RSC Advances ◽  
2021 ◽  
Vol 11 (30) ◽  
pp. 18371-18380
Author(s):  
Erik Bhekti Yutomo ◽  
Fatimah Arofiati Noor ◽  
Toto Winata
Keyword(s):  
Magnetic Properties ◽  
Density Functional ◽  
Functional Study ◽  
Density Functional Study ◽  
Electronic And Magnetic Properties ◽  
Doped Graphene ◽  
Dopant Atoms ◽  
Pyridinic N

The number of dopant atoms is a parameter that can effectively tune the electronic and magnetic properties of graphitic and pyridinic N-doped graphene.

scholarly journals Study of the Molecule Adsorption Process during the Molecular Doping

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1899
Author(s):  
Mattia Pizzone ◽  
Maria Grazia Grimaldi ◽  
Antonino La La Magna ◽  
Neda Rahmani ◽  
Silvia Scalese ◽  
...  
Keyword(s):  
Density Functional ◽  
Electrical Characterization ◽  
Molecular Surface ◽  
Doping Profile ◽  
Electrical Measurements ◽  
Self Assembled Monolayer ◽  
Depth Study ◽  
Molecular Doping ◽  
Dopant Atoms ◽  
Molecular Layers

Molecular Doping (MD) involves the deposition of molecules, containing the dopant atoms and dissolved in liquid solutions, over the surface of a semiconductor before the drive-in step. The control on the characteristics of the final doped samples resides on the in-depth study of the molecule behaviour once deposited. It is already known that the molecules form a self-assembled monolayer over the surface of the sample, but little is known about the role and behaviour of possible multiple layers that could be deposited on it after extended deposition times. In this work, we investigate the molecular surface coverage over time of diethyl-propyl phosphonate on silicon, by employing high-resolution morphological and electrical characterization, and examine the effects of the post-deposition surface treatments on it. We present these data together with density functional theory simulations of the molecules–substrate system and electrical measurements of the doped samples. The results allow us to recognise a difference in the bonding types involved in the formation of the molecular layers and how these influence the final doping profile of the samples. This will improve the control on the electrical properties of MD-based devices, allowing for a finer tuning of their performance.

scholarly journals Mechanism of Electron-Beam Manipulation of Single-Dopant Atoms in Silicon

2021 ◽  
Author(s):  
Alexander Markevich ◽  
Bethany M. Hudak ◽  
Jacob Madsen ◽  
Jiaming Song ◽  
Paul C. Snijders ◽  
...  
Keyword(s):  
Electron Beam ◽  
Dopant Atoms ◽  
Electron Beam Manipulation ◽  
Beam Manipulation

scholarly journals Lattice relaxations around individual dopant atoms in SrTiO3

2019 ◽  
Vol 3 (11) ◽  
Author(s):  
Salva Salmani-Rezaie ◽  
Honggyu Kim ◽  
Kaveh Ahadi ◽  
Susanne Stemmer
Keyword(s):  
Dopant Atoms

scholarly journals Reversal of the Charge Transfer between Host and Dopant Atoms in Semiconductor Nanocrystals

Nano Letters ◽  
2004 ◽  
Vol 4 (11) ◽  
pp. 2251-2254 ◽  
Author(s):  
Torbjörn Blomquist ◽  
George Kirczenow
Keyword(s):  
Charge Transfer ◽  
Semiconductor Nanocrystals ◽  
Dopant Atoms

Pts-Oi Complex Formation in Platinum Diffused Silicon

2005 ◽  
Vol 864 ◽  
Author(s):  
Wilfried Vervisch ◽  
Laurent Ventura ◽  
Bernard Pichaud ◽  
Gérard Ducreux ◽  
André Lhorte
Keyword(s):  
Thermal Treatment ◽  
Complex Formation ◽  
Cooling Rate ◽  
Point Defects ◽  
Diffusion Processes ◽  
Silicon Wafers ◽  
Doping Behaviour ◽  
Simulation Results ◽  
Dopant Atoms ◽  
P Type

AbstractWhen platinum is diffused at temperatures higher than 900°C in Cz or FZ low doped n-type silicon samples, which are then cooled slowly in the range [1-10]°C/min, a p-type doping leading to the formation of a pn junction can be observed by spreading resistance measurement. The lower the cooling rate, the deeper the junction is. This junction disappears after a second thermal treatment finishing with a quenching step. A platinum related complex formation is considered to explain this reversible doping behaviour. Different possible interactions between platinum and other impurities such as dopant atoms, intrinsic point defects, and common residual impurities (C, Oi, transition metallic atoms) are studied here. Experimental results from Pt diffusion processes in different qualities of silicon wafers, and simulation results, lead to the conclusion that the platinum related p-type doping effect is due to the formation of a Pts-Oi complex.

Reactions of point defects and dopant atoms in silicon

1992 ◽  
Vol 69 (1) ◽  
pp. 116-119 ◽  
Author(s):  
N. E. B. Cowern ◽  
G. F. A. van de Walle ◽  
P. C. Zalm ◽  
D. J. Oostra
Keyword(s):  
Point Defects ◽  
Dopant Atoms

Scalable quantum computing with ion-implanted dopant atoms in silicon

2018 ◽  
Author(s):  
A. Morello ◽  
G. Tosi ◽  
F.A. Mohiyaddin ◽  
V. Schmitt ◽  
V. Mourik ◽  
...  
Keyword(s):  
Quantum Computing ◽  
Dopant Atoms ◽  
Ion Implanted
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