Single step process for epitaxial lateral overgrowth of GaN on SiC and sapphire substrates

1999 ◽  
Vol 75 (24) ◽  
pp. 3820-3822 ◽  
Author(s):  
J. A. Smart ◽  
E. M. Chumbes ◽  
A. T. Schremer ◽  
J. R. Shealy
Keyword(s):  
Single Step ◽  
Epitaxial Lateral Overgrowth ◽  
Step Process ◽  
Sapphire Substrates ◽  
Lateral Overgrowth

Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates

2006 ◽  
Vol 203 (7) ◽  
pp. 1632-1635 ◽  
Author(s):  
K. Nakano ◽  
M. Imura ◽  
G. Narita ◽  
T. Kitano ◽  
Y. Hirose ◽  
...  
Keyword(s):  
Epitaxial Lateral Overgrowth ◽  
Sapphire Substrates ◽  
Lateral Overgrowth ◽  
Patterned Sapphire Substrates

Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates

1998 ◽  
Vol 537 ◽  
Author(s):  
Zhonghai Yu ◽  
M.A.L. Johnson ◽  
J.D. Brown ◽  
N.A. El-Masry ◽  
J. F. Muth ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Lateral Overgrowth ◽  
Threading Dislocations ◽  
Growth Processes ◽  
Mbe Growth ◽  
Sapphire Substrates ◽  
Lateral Overgrowth ◽  
Movpe Growth ◽  
Gan Film ◽  
Growth Experiments

AbstractThe epitaxial lateral overgrowth (ELO) process for GaN has been studied using SiC and sapphire substrates. Both MBE and MOVPE growth processes were employed in the study. The use of SiO2 versus SiNx insulator stripes was investigated using window/stripe widths ranging from 2 μm/4 μm to 3 μm/15 μm. GaN film depositions were completed at temperatures ranging from 800°C to 1120°C. Characterization experiments included RHEED, TEM, SEM and cathodolumenescence studies. The MBE growth experiments produced polycrystalline GaN over the insulator stripes even at deposition temperatures as high as 990°C. In contrast, MOVPE growth produced single-crystal GaN stripes with no observable threading dislocations.

Epitaxial lateral overgrowth of GaN on sapphire substrates using in-situ carbonized photoresist mask

2011 ◽  
Vol 326 (1) ◽  
pp. 200-204 ◽  
Author(s):  
Sang-il Kim ◽  
Bumjoon Kim ◽  
Samseok Jang ◽  
A-young Kim ◽  
Jihun Park ◽  
...  
Keyword(s):  
Epitaxial Lateral Overgrowth ◽  
Sapphire Substrates ◽  
Lateral Overgrowth ◽  
Photoresist Mask

scholarly journals Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates

1999 ◽  
Vol 4 (S1) ◽  
pp. 447-452
Author(s):  
Zhonghai Yu ◽  
M.A.L. Johnson ◽  
J.D. Brown ◽  
N.A. El-Masry ◽  
J. F. Muth ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Lateral Overgrowth ◽  
Threading Dislocations ◽  
Growth Processes ◽  
Mbe Growth ◽  
Sapphire Substrates ◽  
Lateral Overgrowth ◽  
Movpe Growth ◽  
Gan Film ◽  
Growth Experiments

The epitaxial lateral overgrowth (ELO) process for GaN has been studied using SiC and sapphire substrates. Both MBE and MOVPE growth processes were employed in the study. The use of SiO2 versus SiNx insulator stripes was investigated using window/stripe widths ranging from 20 μm/4 μm to 3 μm/15 μm. GaN film depositions were completed at temperatures ranging from 800 °C to 1120 °C. Characterization experiments included RHEED, TEM, SEM and cathodolumenescence studies. The MBE growth experiments produced polycrystalline GaN over the insulator stripes even at deposition temperatures as high as 990 °C. In contrast, MOVPE growth produced single-crystal GaN stripes with no observable threading dislocations.

Epitaxial lateral overgrowth of GaN on nano-cavity patterned sapphire substrates

2019 ◽  
Vol 507 ◽  
pp. 103-108 ◽  
Author(s):  
Donghyun Lee ◽  
Seungmin Lee ◽  
Giwoong Kim ◽  
Jongmyeong Kim ◽  
Jeonghwan Jang ◽  
...  
Keyword(s):  
Epitaxial Lateral Overgrowth ◽  
Sapphire Substrates ◽  
Lateral Overgrowth ◽  
Patterned Sapphire Substrates

Study on shallow donor-type impurities of GaN epilayer regrown by epitaxial lateral overgrowth technique

2021 ◽  
Vol 118 (1) ◽  
pp. 012105
Author(s):  
Wenxin Tang ◽  
Fu Chen ◽  
Li zhang ◽  
Kun Xu ◽  
Xuan Zhang ◽  
...  
Keyword(s):  
Shallow Donor ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Donor Type
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