Ultrafast carrier trapping in Be-doped low-temperature-grown GaAs

1999 ◽  
Vol 75 (21) ◽  
pp. 3336-3338 ◽  
Author(s):  
A. Krotkus ◽  
K. Bertulis ◽  
L. Dapkus ◽  
U. Olin ◽  
S. Marcinkevičius
Keyword(s):  
Low Temperature ◽  
Carrier Trapping ◽  
Ultrafast Carrier ◽  
Low Temperature Grown Gaas

Influence of Be Doping on Material Properties of Low-Temperature-Grown GaAs

2002 ◽  
Vol 719 ◽  
Author(s):  
Saulius Marcinkevièius ◽  
Andreas Gaarder ◽  
Jörg Siegert ◽  
Jean-Fraņois Roux ◽  
Jean-Louis Coutaz ◽  
...  
Keyword(s):  
Low Temperature ◽  
Material Properties ◽  
Doping Level ◽  
Carrier Dynamics ◽  
Electron Trapping ◽  
Structural Quality ◽  
Trapping Time ◽  
Ultrafast Carrier ◽  
Antisite Defects ◽  
Low Temperature Grown Gaas

AbstractA number of experimental techniques were used to characterize structural quality, ultrafast carrier dynamics and deep center properties of low-temperature-grown GaAs doped with Be. GaAs layers grown at 280 °C, doped with the Be concentration from 5×1017 cm-3 to 2×1019 cm-3 and annealed at temperatures between 500 and 800 °C were studied. Electron trapping times in these samples varied from hundreds of femtoseconds to several picoseconds. A non-monotonous electron trapping time dependence on Be doping level is explained by the influence of triple-charged gallium vacancies and single-charged Be-acceptors on the number of ionized As antisite defects.

Pump and Probe Terahertz Generation Study of Ultrafast Carrier Dynamics in Low-Temperature Grown-GaAs

2002 ◽  
Vol 41 (Part 2, No. 6B) ◽  
pp. L706-L709 ◽  
Author(s):  
Masayoshi Tonouchi ◽  
Naohiro Kawasaki ◽  
Takahiro Yoshimura ◽  
Hagen Wald ◽  
Paul Seidel
Keyword(s):  
Low Temperature ◽  
Carrier Dynamics ◽  
Terahertz Generation ◽  
Ultrafast Carrier Dynamics ◽  
Pump And Probe ◽  
Ultrafast Carrier ◽  
Low Temperature Grown Gaas

The role of point defects and arsenic precipitates in carrier trapping and recombination in low‐temperature grown GaAs

1996 ◽  
Vol 69 (10) ◽  
pp. 1465-1467 ◽  
Author(s):  
A. J. Lochtefeld ◽  
M. R. Melloch ◽  
J. C. P. Chang ◽  
E. S. Harmon
Keyword(s):  
Low Temperature ◽  
Point Defects ◽  
Carrier Trapping ◽  
Low Temperature Grown Gaas

Ultrafast carrier lifetime in low-temperature grown GaAs, InP and InGaP

2002 ◽  
Author(s):  
Y. Kostoulas ◽  
K.B. Ucer ◽  
L. Waxer ◽  
G.W. Wicks ◽  
L.A. Walmsley ◽  
...  
Keyword(s):  
Low Temperature ◽  
Carrier Lifetime ◽  
Ultrafast Carrier ◽  
Low Temperature Grown Gaas

Ultrafast photoconductors from low-temperature-grown GaAs for terahertz components activated by femtosecond 1-μm wavelength laser pulses

2012 ◽  
Vol 9 (7) ◽  
pp. 1693-1695
Author(s):  
Juozas Adamonis ◽  
Klemensas Bertulis ◽  
Andrius Bičiūnas ◽  
Ramūnas Adomavičius ◽  
Arūnas Krotkus
Keyword(s):  
Low Temperature ◽  
Laser Pulses ◽  
Low Temperature Grown Gaas

Interaction of localized spins in low-temperature-grown GaAs layers

2010 ◽  
Vol 405 (19) ◽  
pp. 4133-4138 ◽  
Author(s):  
D.W. Jung ◽  
J.P. Noh ◽  
N. Otsuka
Keyword(s):  
Low Temperature ◽  
Low Temperature Grown Gaas

Ohmic nanocontacts to GaAs using undoped and p-doped layers of low-temperature-grown GaAs

2000 ◽  
Vol 76 (2) ◽  
pp. 212-214 ◽  
Author(s):  
Takhee Lee ◽  
Nien-Po Chen ◽  
Jia Liu ◽  
R. P. Andres ◽  
D. B. Janes ◽  
...  
Keyword(s):  
Low Temperature ◽  
Low Temperature Grown Gaas
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