scholarly journals Selective excitation and thermal quenching of the yellow luminescence of GaN

1999 ◽  
Vol 75 (21) ◽  
pp. 3273-3275 ◽  
Author(s):  
J. S. Colton ◽  
P. Y. Yu ◽  
K. L. Teo ◽  
E. R. Weber ◽  
P. Perlin ◽  
...  
Keyword(s):  
Thermal Quenching ◽  
Selective Excitation ◽  
Yellow Luminescence

Large negative thermal quenching of yellow luminescence in non-polar InGaN/GaN quantum wells

2021 ◽  
Vol 130 (20) ◽  
pp. 205704
Author(s):  
Xiaorui Wang ◽  
Tao Wang ◽  
Dapeng Yu ◽  
Shijie Xu
Keyword(s):  
Quantum Wells ◽  
Thermal Quenching ◽  
Yellow Luminescence

scholarly journals Selective excitation of the yellow luminescence of GaN

1999 ◽  
Vol 273-274 ◽  
pp. 75-79 ◽  
Author(s):  
J.S Colton ◽  
P.Y Yu ◽  
K.L Teo ◽  
P Perlin ◽  
E.R Weber ◽  
...  
Keyword(s):  
Selective Excitation ◽  
Yellow Luminescence

Thermal quenching of the yellow luminescence in GaN

2018 ◽  
Vol 123 (16) ◽  
pp. 161520 ◽  
Author(s):  
M. A. Reshchikov ◽  
N. M. Albarakati ◽  
M. Monavarian ◽  
V. Avrutin ◽  
H. Morkoç
Keyword(s):  
Thermal Quenching ◽  
Yellow Luminescence

Thermal quenching of extrinsic photoluminescence of GaAs-Ga1-x Al x As single quantum well

1988 ◽  
Vol 10 (10) ◽  
pp. 1243-1248 ◽  
Author(s):  
Y. Chen ◽  
A. Hameury ◽  
J. Massies ◽  
C. Neri
Keyword(s):  
Quantum Well ◽  
Thermal Quenching ◽  
Single Quantum ◽  
Single Quantum Well

Thermal Quenching and Antiquenching of Photoluminescence in Solution-Grown Cs4PbBr6 Perovskite Single Crystals

2021 ◽  
Author(s):  
Mingming Chen ◽  
Shuaiheng Yang ◽  
Youwen Yuan ◽  
Xuemin Shen ◽  
Yuan Liu ◽  
...  
Keyword(s):  
Single Crystals ◽  
Thermal Quenching

A Sims Study of Electroluminescent Phosphors: SrS:Cu

1999 ◽  
Vol 560 ◽  
Author(s):  
Lily H. Zhang ◽  
Larry Wang ◽  
Wusheng Tong ◽  
YongBao Xin
Keyword(s):  
Material Characterization ◽  
Secondary Ion Mass Spectrometry ◽  
Dopant Concentration ◽  
Thermal Quenching ◽  
Areal Density ◽  
Device Performance ◽  
Cell Temperature ◽  
Co Doping ◽  
Doping Effects ◽  
Secondary Ion

ABSTRACTThis study has used secondary ion mass spectrometry (SIMS) as a technique for thin film EL material characterization. It has shown that the Cu dopant concentration in the SrS films directly correlates with the luminescent brightness of the EL devices. A series of SrS:Cu,Y were grown using MBE to study the Y co-doping effects. It has been found that Y peak concentration and areal density in the SrS increased as the Y evaporation cell temperature was increased. The maximum PL intensity was found in the sample grown in the middle of the Y cell temperature range used. The Y co-doping has shown to reduce the thermal quenching effects in SrS EL devices. Therefore, in this series of samples, a good correlation has been found between Y and Cu concentration and the EL device performance characteristics.

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