Thermal Quenching and Antiquenching of Photoluminescence in Solution-Grown Cs4PbBr6 Perovskite Single Crystals

2021 ◽  
Author(s):  
Mingming Chen ◽  
Shuaiheng Yang ◽  
Youwen Yuan ◽  
Xuemin Shen ◽  
Yuan Liu ◽  
...  
Keyword(s):  
Single Crystals ◽  
Thermal Quenching

Thermoluminescence study on TlGaSSe layered single crystals

2014 ◽  
Vol 28 (16) ◽  
pp. 1450133 ◽  
Author(s):  
Serdar Delice ◽  
Nizami M. Gasanly
Keyword(s):  
Single Crystals ◽  
Heating Rate ◽  
Thermal Quenching ◽  
Activation Energies ◽  
Temperature Peak ◽  
Heating Rates ◽  
Quenching Effect ◽  
Defect Centers ◽  
General Order ◽  
Maximum Temperatures

The defect centers in TlGaSSe single crystals have been investigated by performing thermoluminescence (TL) measurements with various heating rates between 0.5 K/s and 1.0 K/s in the temperature range of 10–180 K. The TL spectra, with peak maximum temperatures at 39 K and 131 K, revealed the existences of two defect levels. Curve fitting, initial rise and peak shape methods were used to determine the activation energies of two defect centers. The experimental results also showed that the trapping process was dominated by second-order kinetics for the trap related with low temperature peak while the general order (mixed order) kinetics was dominant for the trap donated to high temperature peak. Furthermore, heating rate dependences and traps distributions were studied for two defect centers separately. Thermal quenching effect dominates the behavior of these defects as the heating rate is increased. Also, quasi-continuous distributions were established with the increase of the activation energies from 16 meV to 27 meV and from 97 meV to 146 meV for the traps associated with the peaks observed at low and high temperatures, respectively.

Thermal quenching of 3.0-eV photoluminescence in α-Al2O3 single crystals

2006 ◽  
Vol 32 (1) ◽  
pp. 58-60 ◽  
Author(s):  
I. A. Weinstein ◽  
A. S. Vokhmintsev ◽  
V. S. Kortov
Keyword(s):  
Single Crystals ◽  
Thermal Quenching ◽  
Α Al2o3

scholarly journals Электрически активные состояния захвата и переноса заряда, обусловливающие медленную рекомбинацию в кристаллах бромида таллия при низких температурах

2018 ◽  
Vol 52 (2) ◽  
pp. 171
Author(s):  
В. Кажукаускас ◽  
Р. Гарбачаускас ◽  
С. Савицки
Keyword(s):  
Activation Energy ◽  
Electric Field ◽  
Single Crystals ◽  
Applied Electric Field ◽  
Thermal Activation ◽  
Thermal Quenching ◽  
Activation Energies ◽  
Trap States ◽  
Optical Generation ◽  
Stockbarger Method

AbstractTlBr single crystals grown by the Bridgman–Stockbarger method are studied. It is established that frozen-conductivity effects manifest themselves under interband excitation by light at temperatures below 200 K. Herewith, clearly pronounced superlinear dependences of the induced photoconductivity on the strength of the applied electric field manifest themselves. The results of studying thermally stimulated conductivity evidence that these phenomena can be associated with the filling of trap states with thermal activation energies of 0.08–0.12 eV. This state can be removed due to thermal quenching at temperatures of ≳180 K because of the emptying of energy states with an activation energy of 0.63–0.65 eV filled after optical generation.

scholarly journals THERMAL QUENCHING OF OXYGEN-RELATED CENTERS PHOTOLUMINESCENCE IN AlN SINGLE CRYSTALS

2016 ◽  
Vol 6 (6) ◽  
pp. 95-98
Author(s):  
D.V. Chaikin ◽  
◽  
A.S. Vokhmintsev ◽  
I.A. Weinstein ◽  
◽  
...  
Keyword(s):  
Single Crystals ◽  
Thermal Quenching

scholarly journals Negative Thermal Quenching in FASnI3 Perovskite Single Crystals and Thin Films

2020 ◽  
Vol 5 (8) ◽  
pp. 2512-2519
Author(s):  
Simon Kahmann ◽  
Olga Nazarenko ◽  
Shuyan Shao ◽  
Oleh Hordiichuk ◽  
Mikaël Kepenekian ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystals ◽  
Thermal Quenching

Thermal Quenching and Dose Studies of X-ray Luminescence in Single Crystals of Halide Perovskites

2018 ◽  
Vol 122 (28) ◽  
pp. 16265-16273 ◽  
Author(s):  
Aozhen Xie ◽  
Tien Hoa Nguyen ◽  
Chathuranga Hettiarachchi ◽  
Marcin E. Witkowski ◽  
Winicjusz Drozdowski ◽  
...  
Keyword(s):  
Single Crystals ◽  
Thermal Quenching ◽  
X Ray ◽  
Halide Perovskites

The Microstructure of Shock-Synthesized Diamond

1967 ◽  
Vol 25 ◽  
pp. 324-325
Author(s):  
Lucien F. Trueb
Keyword(s):  
Single Crystals ◽  
Preferred Orientation ◽  
High Magnification ◽  
Texture Pattern ◽  
Shock Process ◽  
New Type ◽  
Diffraction Diagram

A new type of synthetic industrial diamond formed by an explosive shock process has been recently developed by the Du Pont Company. This material consists of a mixture of two basically different forms, as shown in Figure 1: relatively flat and compact aggregates of acicular crystallites, and single crystals in the form of irregular polyhedra with straight edges.Figure 2 is a high magnification micrograph typical for the fibrous aggregates; it shows that they are composed of bundles of crystallites 0.05-0.3 μ long and 0.02 μ. wide. The selected area diffraction diagram (insert in Figure 2) consists of a weak polycrystalline ring pattern and a strong texture pattern with arc reflections. The latter results from crystals having preferred orientation, which shows that in a given particle most fibrils have a similar orientation.

A New Defect in Polyethylene Single Crystals

1973 ◽  
Vol 31 ◽  
pp. 70-71
Author(s):  
E. L. Thomas ◽  
S. L. Sass
Keyword(s):  
Single Crystals ◽  
Screw Dislocation ◽  
Small Distance ◽  
Dipole Model ◽  
Dislocation Dipole ◽  
Chain Folding ◽  
Black And White ◽  
Polymer Crystal ◽  
Different Types

In polyethylene single crystals pairs of black and white lines spaced 700-3,000Å apart, parallel to the [100] and [010] directions, have been identified as microsector boundaries. A microsector is formed when the plane of chain folding changes over a small distance within a polymer crystal. In order for the different types of folds to accommodate at the boundary between the 2 fold domains, a staggering along the chain direction and a rotation of the chains in the plane of the boundary occurs. The black-white contrast from a microsector boundary can be explained in terms of these chain rotations. We demonstrate that microsectors can terminate within the crystal and interpret the observed terminal strain contrast in terms of a screw dislocation dipole model.

Preferential Sputtering of Ni3Al Single Crystals Studied Using Atom-Probe Field-Ion Microscopy and XPS

1981 ◽  
Vol 39 ◽  
pp. 16-17
Author(s):  
M.P. Thomas ◽  
A.R. Waugh ◽  
M.J. Southon ◽  
Brian Ralph
Keyword(s):  
Single Crystals ◽  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Depth Profiling ◽  
Analytical Techniques ◽  
Atom Probe ◽  
Probe Field ◽  
Preferential Sputtering ◽  
Argon Ion Bombardment ◽  
Argon Ion

It is well known that ion-induced sputtering from numerous multicomponent targets results in marked changes in surface composition (1). Preferential removal of one component results in surface enrichment in the less easily removed species. In this investigation, a time-of-flight atom-probe field-ion microscope A.P. together with X-ray photoelectron spectroscopy XPS have been used to monitor alterations in surface composition of Ni3Al single crystals under argon ion bombardment. The A.P. has been chosen for this investigation because of its ability using field evaporation to depth profile through a sputtered surface without the need for further ion sputtering. Incident ion energy and ion dose have been selected to reflect conditions widely used in surface analytical techniques for cleaning and depth-profiling of samples, typically 3keV and 1018 - 1020 ion m-2.

Dislocation structures around SiO2 Particles in aged Cu-Cr-SiO2

1978 ◽  
Vol 36 (1) ◽  
pp. 594-595
Author(s):  
N.J. Long ◽  
M.H. Loretto ◽  
C.H. Lloyd
Keyword(s):  
Flow Stress ◽  
Single Crystals ◽  
Room Temperature ◽  
Thin Foil ◽  
Age Hardening ◽  
Dispersion Strengthening ◽  
Accurate Picture ◽  
The Matrix ◽  
Very High ◽  
Good Agreement

IntroductionThere have been several t.e.m. studies (1,2,3,4) of the dislocation arrangements in the matrix and around the particles in dispersion strengthened single crystals deformed in single slip. Good agreement has been obtained in general between the observed structures and the various theories for the flow stress and work hardening of this class of alloy. There has been though some difficulty in obtaining an accurate picture of these arrangements in the case when the obstacles are large (of the order of several 1000's Å). This is due to both the physical loss of dislocations from the thin foil in its preparation and to rearrangement of the structure on unloading and standing at room temperature under the influence of the very high localised stresses in the vicinity of the particles (2,3).This contribution presents part of a study of the Cu-Cr-SiO2 system where age hardening from the Cu-Cr and dispersion strengthening from Cu-Sio2 is combined.

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