scholarly journals Erratum: “Structure control and characterization of SrBi2Ta2O9 thin films by a modified annealing method” [Appl. Phys. Lett. 74, 1221 (1999)]

1999 ◽  
Vol 75 (14) ◽  
pp. 2151-2151
Author(s):  
G. D. Hu ◽  
I. H. Wilson ◽  
J. B. Xu ◽  
W. Y. Cheung ◽  
S. P. Wong ◽  
...  
Keyword(s):  
Thin Films ◽  
Structure Control ◽  
Annealing Method

Structure control and characterization of SrBi2Ta2O9 thin films by a modified annealing method

1999 ◽  
Vol 74 (9) ◽  
pp. 1221-1223 ◽  
Author(s):  
G. D. Hu ◽  
I. H. Wilson ◽  
J. B. Xu ◽  
W. Y. Cheung ◽  
S. P. Wong ◽  
...  
Keyword(s):  
Thin Films ◽  
Structure Control ◽  
Annealing Method

Characterization of AgGaSe2 thin films grown by post annealing method

2006 ◽  
Vol 515 (2) ◽  
pp. 505-508 ◽  
Author(s):  
H. Matsuo ◽  
K. Yoshino ◽  
T. Ikari
Keyword(s):  
Thin Films ◽  
Post Annealing ◽  
Annealing Method

scholarly journals Characterization of nanostructured VO_2 thin films grown by magnetron controlled sputtering deposition and post annealing method

2009 ◽  
Vol 17 (26) ◽  
pp. 24153 ◽  
Author(s):  
Sihai Chen ◽  
Jianjun Lai ◽  
Jun Dai ◽  
Hong Ma ◽  
Hongchen Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Sputtering Deposition ◽  
Post Annealing ◽  
Annealing Method

Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

1989 ◽  
Vol 47 ◽  
pp. 592-593
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  
Keyword(s):  
Thin Films ◽  
Wide Band ◽  
Deposition Process ◽  
Heteroepitaxial Growth ◽  
Electron Microscopic ◽  
Wide Band Gap ◽  
Lattice Matching ◽  
Different Types ◽  
Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

Deposition and Characterization of Al2O3 and BiFeO3 Thin Films on Titanium Substrates for Tough MEMS Devices

2017 ◽  
Vol 137 (1) ◽  
pp. 46-47
Author(s):  
Takeshi Kohno ◽  
Masato Mihara ◽  
Ataru Tanabe ◽  
Takashi Abe ◽  
Masanori Okuyama ◽  
...  
Keyword(s):  
Thin Films ◽  
Mems Devices ◽  
Titanium Substrates

Vapor Deposition Polymerization and Electrical Characterization of TPD Thin Films

2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Electrical Characterization

Preparation and Characterization of Polymer Blend (PVA/PEO) Filled with Methyl Orange Thin Films

2018 ◽  
Vol 14 (2) ◽  
pp. 221-234
Author(s):  
Ahmed Namah Mohamed ◽  
◽  
Jafer Fahdel Odah ◽  
Haider Tawfiq Naeem
Keyword(s):  
Thin Films ◽  
Methyl Orange ◽  
Polymer Blend
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