scholarly journals High-power laser light source for near-field optics and its application to high-density optical data storage

1999 ◽  
Vol 75 (11) ◽  
pp. 1515-1517 ◽  
Author(s):  
Afshin Partovi ◽  
David Peale ◽  
Matthias Wuttig ◽  
Cherry A. Murray ◽  
George Zydzik ◽  
...  
Keyword(s):  
Data Storage ◽  
High Power ◽  
Laser Light ◽  
Near Field ◽  
Optical Data Storage ◽  
Optical Data ◽  
High Power Laser ◽  
Power Laser ◽  
Near Field Optics ◽  
Laser Light Source

Near field analysis of CSG and BSG combined element under high power laser condition

2006 ◽  
Author(s):  
Xin Yao ◽  
Fuhua Gao ◽  
Yixiao Zhang ◽  
Lei Wang ◽  
Yongkang Guo ◽  
...  
Keyword(s):  
High Power ◽  
Near Field ◽  
Field Analysis ◽  
High Power Laser ◽  
Power Laser ◽  
Laser Condition

Numerical analysis of micro-aperture laser for near field optical data storage

2002 ◽  
Author(s):  
Xiaojin Jiao ◽  
Yonghua Lu ◽  
Hai Ming ◽  
Jiangping Xie
Keyword(s):  
Numerical Analysis ◽  
Data Storage ◽  
Near Field ◽  
Optical Data Storage ◽  
Optical Data

Identifying Defects in Thin Film of High Power Laser Lens by Using Near Field Microimaging Method

2017 ◽  
Vol 44 (1) ◽  
pp. 0103001
Author(s):  
白忠臣 Bai Zhongchen ◽  
黄兆岭 Huang Zhaoling ◽  
郝礼才 Hao Licai ◽  
陆安江 Lu Anjiang ◽  
秦水介 Qin Shuijie
Keyword(s):  
Thin Film ◽  
High Power ◽  
Near Field ◽  
High Power Laser ◽  
Power Laser

Improving near field of high-power laser beams

2011 ◽  
Vol 23 (4) ◽  
pp. 959-962
Author(s):  
谢娜 Xie Na ◽  
黄晚晴 Huang Wanqing ◽  
郭仪 Guo Yi ◽  
王晓东 Wang Xiaodong ◽  
方香云 Fang Xiangyun ◽  
...  
Keyword(s):  
High Power ◽  
Near Field ◽  
Laser Beams ◽  
High Power Laser ◽  
Power Laser

Electronic and Optoelectronic Devices Based on GaN-AIGaN Heterostructures

1994 ◽  
Vol 339 ◽  
Author(s):  
M. Asif Khan ◽  
J. N. Kuznia ◽  
S. Krishnankutty ◽  
R. A. Skogman ◽  
D. T. Olson ◽  
...  
Keyword(s):  
Solid State ◽  
Data Storage ◽  
High Power ◽  
Oil And Gas ◽  
Optical Data Storage ◽  
Optical Data ◽  
Future Research ◽  
Material System ◽  
Ir Radiation ◽  
Processing Technologies

ABSTRACTAvailability of optoelectronic components operating in the U V-Visible part of the spectrum opens several exciting and important system applications. Solid state ultraviolet and blue-green lasers can increase the optical data storage density of CDROM/WORM and magneto-optical disks by a factor of four. They are also ideally suited for environmental pollutant identification and monitoring. On the other hand, solid state ultraviolet detectors that do not respond to visible or IR radiation are highly desirable for various commercial systems. These include medical imaging, industrial boiler systems, fire/flame safeguard systems around oil and gas installations and several military applications. A key requirement for these ultraviolet laser and sensor devices is the availability of a semiconductor material system with high quality controlled doping and fabrication technology.AlxGa1−xN and InxGa1−xN for which the direct bandgap can be tailored from the visible to the deep UV is such a material system. Ours and several other research groups (nationally and internationally) have been developing AlxGa1−xN materials and processing technologies over the past several years. Recently, by employing innovative approaches, significant advances have been made in heteroepitaxy of AlxGa1−xN on sapphire substrates. Also, controlled n and p-type doping has been achieved. Several high performance devices that form the basis of exciting future research have been demonstrated. These include high responsivity visible blind ultraviolet sensors, basic transistor structures and high power blue light emitting diodes. These pave the way for future research leading to exciting products such as blue-green lasers and UV-imaging arrays. The demonstrated transistor structures are foundation for building AlxGa1−xN -GaN based high power, high frequency and high temperature electronic components. In this paper, we will summarize some of our recent work and reflect on the potential and the issues in AlxGa1−xN-InxGa1−xN based device development.

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