Long wavelength (1.3 and 1.5 μm) photoluminescence from InGaAs/GaPAsSb quantum wells grown on GaAs

1999 ◽  
Vol 75 (9) ◽  
pp. 1267-1269 ◽  
Author(s):  
P. Dowd ◽  
W. Braun ◽  
David J. Smith ◽  
C. M. Ryu ◽  
C.-Z. Guo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Long Wavelength

Low-Lattice-Strain Long-Wavelength GaAsSb/GaInAs Type-II Quantum Wells Grown on GaAs Substrates

2002 ◽  
Vol 41 (Part 2, No. 10A) ◽  
pp. L1040-L1042 ◽  
Author(s):  
Makoto Kudo ◽  
Kiyoshi Ouchi ◽  
Jun-ichi Kasai ◽  
Tomoyoshi Mishima
Keyword(s):  
Quantum Wells ◽  
Lattice Strain ◽  
Type Ii ◽  
Long Wavelength ◽  
Gaas Substrates ◽  
Type Ii Quantum Wells

scholarly journals Long wavelength stacking induced shift of the near-infrared photoluminescence from unintentional MOVPE grown InGaSb/GaSb quantum wells

AIP Advances ◽  
2018 ◽  
Vol 8 (7) ◽  
pp. 075004 ◽  
Author(s):  
Chinedu Christian Ahia ◽  
Ngcali Tile ◽  
Amalia Navarro ◽  
Beatriz Galiana Blanco ◽  
Johannes Reinhardt Botha
Keyword(s):  
Quantum Wells ◽  
Near Infrared ◽  
Long Wavelength

Temperature Dependence of Photoresponse in p-Type GaAs/AlGaAs Multiple Quantum Wells: Theory and Experiment

1999 ◽  
Vol 607 ◽  
Author(s):  
F. Szmulowicz ◽  
A. Shen ◽  
H. C. Liu ◽  
G. J. Brown ◽  
Z. R. Wasilewski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Bound States ◽  
Light Hole ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Long Wavelength ◽  
Hole Level ◽  
Polarization Characteristics ◽  
P Type

AbstractThis paper describes a study of the photoresponse of long-wavelength (LWIR) and mid-infrared (MWIR) p-type GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) as a function of temperature and QWIP parameters. Using an 8x8 envelope-function model (EFA), we designed and calculated the optical absorption of several bound-to-continuum (BC) structures, with the optimum designs corresponding to the second light hole level (LH2) coincident with the top of the well. For the temperature-dependent study, one non-optimized LWIR and one optimized MWIR samples were grown by MBE and their photoresponse and absorption characteristics measured to test the theory. The theory shows that the placement of the LH2 resonance at the top of the well for the optimized sample and the presence of light-hole-like quasi-bound states within the heavy-hole continuum for the nonoptimized sample account for their markedly different thermal and polarization characteristics. In particular, the theory predicts that, for the LWIR sample, the LH-like quasi-bound states should lead to an increased Ppolarized photoresponse as a function of temperature. Our temperature dependent photoresponse measurements corroborate most of the theoretical findings with respect to the long-wavelength threshold, shape, and polarization and temperature dependence of the spectra.

Long-wavelength emission in InGaAsN/GaAs heterostructures with quantum wells

2000 ◽  
Vol 26 (5) ◽  
pp. 443-445
Author(s):  
B. V. Volovik ◽  
A. R. Kovsh ◽  
W. Passenberg ◽  
H. Kuenzel ◽  
N. N. Ledentsov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Long Wavelength ◽  
Wavelength Emission

Molecular beam epitaxial growth window for high-quality (Ga,In)(N,As) quantum wells for long wavelength emission

2006 ◽  
Vol 88 (19) ◽  
pp. 191115 ◽  
Author(s):  
Fumitaro Ishikawa ◽  
Michael Höricke ◽  
Uwe Jahn ◽  
Achim Trampert ◽  
Klaus H. Ploog
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
High Quality ◽  
Long Wavelength ◽  
Molecular Beam Epitaxial ◽  
Wavelength Emission ◽  
Molecular Beam Epitaxial Growth

Long-wavelength quantum-well infrared detectors based on intersubband transitions in InGaAs/InP quantum wells

1993 ◽  
Author(s):  
Jan Y. Andersson ◽  
Lennart Lundqvist ◽  
Z. F. Paska ◽  
Klaus P. Streubel ◽  
Johan Wallin
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Infrared Detectors ◽  
Intersubband Transitions ◽  
Long Wavelength

Specific features of the spectra and relaxation kinetics of long-wavelength photoconductivity in narrow-gap HgCdTe epitaxial films and heterostructures with quantum wells

2013 ◽  
Vol 47 (11) ◽  
pp. 1438-1441 ◽  
Author(s):  
V. V. Rumyantsev ◽  
A. V. Ikonnikov ◽  
A. V. Antonov ◽  
S. V. Morozov ◽  
M. S. Zholudev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Epitaxial Films ◽  
Narrow Gap ◽  
Relaxation Kinetics ◽  
Long Wavelength ◽  
Kinetics Of

Mechanical, Thermal and Flow Dynamics Issues in Compound Semiconductor MOCVD Reactor Design

1994 ◽  
Vol 340 ◽  
Author(s):  
A.I. Gurary ◽  
G.S. Tompa ◽  
K. Moy ◽  
P. Zawadzki
Keyword(s):  
Quantum Wells ◽  
High Speed ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Rotating Disk ◽  
Compound Semiconductor ◽  
Element Analysis ◽  
Long Wavelength ◽  
Mocvd Reactor ◽  
Reactor Geometry

ABSTRACTIn recent years Metalorganic Chemical Vapor Deposition (MOCVD) becomes a key epitaxial process for a variety of compound semiconductor devices such as: GaAs/AlGaAs lasers, HEMTs, LEDs, photocathodes, solar cells, and MESFETs; InP/InGaAsP long wavelength lasers and detectors; InP/InGaAs quantum wells and detectors, etc. Development of reliable, high throughput equipment is a major task in the implementation of MOCVD into cost-effective manufacturings. We have used Computational Fluid Dynamics (CFD) and Finite Element Analysis (FEA) software to model thermal, structural, and flow processes for the scaling of EMCORE vertical, high speed rotating disk reactor (RDR) to large dimensions (four 4″ wafers located on 12″ wafer carrier). Flow modeling was used to determine basic reactor geometry and the relation between process parameters such as total reactant flow, temperature, pressure, and rotation speed. Thermal and structural analysis was used to produce a uniform substrate temperature, avoid reactor overheating and decrease thermal stress. Flow and temperature distribution predicted by the modeling were found to be well correlated with experimental results.

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