Optical properties of a high-quality insulating GaN epilayer

1999 ◽  
Vol 74 (25) ◽  
pp. 3821-3823 ◽  
Author(s):  
K. C. Zeng ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
Wei Yang
Keyword(s):  
Optical Properties ◽  
High Quality

Microstructural and optical properties of high-quality Mg–Zn oxide thin films

2021 ◽  
Vol 127 ◽  
pp. 105690
Author(s):  
A. Sáenz-Trevizo ◽  
D. Kuchle-Mena ◽  
P. Pizá-Ruiz ◽  
P. Amézaga-Madrid ◽  
O. Solís-Canto ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Oxide Thin Films ◽  
High Quality

Dependence of Scintillators Optical Properties on Intrinsic Structural Defects

1994 ◽  
Vol 348 ◽  
Author(s):  
N.V. Kilassen
Keyword(s):  
Plastic Deformation ◽  
Optical Properties ◽  
Crystal Growth ◽  
Spectral Distribution ◽  
Light Output ◽  
Structural Defects ◽  
High Quality ◽  
Intrinsic Defects ◽  
Distribution Kinetics ◽  
Wide Range

ABSTRACTThe studies of the dependence of the optical properties of various scintillators on intrinsic structural defects have been reviewed. The greater part of the review is devoted to the defects introduced by plastic deformation. A wide range of variations in the light output, spectral distribution, kinetics and other properties has been observed. These defects can be induced during crystal growth, annealing, processing, etc. The proper regulation of the superstructure of intrinsic defects can ensure the production of high quality scintillators having required properties.

Material and optical properties of GaAs grown on (001) Ge/Si pseudo-substrate

2004 ◽  
Vol 809 ◽  
Author(s):  
Yves Chriqui ◽  
Ludovic Largeau ◽  
Gilles Patriarche ◽  
Guillaume Saint-Girons ◽  
Sophie Bouchoule ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dislocation Density ◽  
High Speed ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Lattice Parameter ◽  
Photoluminescence Intensity ◽  
High Quality ◽  
Light Emitting ◽  
Thermal Expansion Coefficients

ABSTRACTOne of the major challenges during recent years was to achieve the compatibility of III-V semiconductor epitaxy on silicon substrates to combine opto-electronics with high speed circuit technology. However, the growth of high quality epitaxial GaAs on Si is not straightforward due to the intrinsic differences in lattice parameters and thermal expansion coefficients of the two materials. Moreover, antiphase boundaries (APBs) appear that are disadvantageous for the fabrication of light emitting devices. Recently the successful fabrication of high quality germanium layers on exact (001) Si by chemical vapor deposition (CVD) was reported. Due to the germanium seed layer the lattice parameter is matched to the one of GaAs providing for excellent conditions for the subsequent GaAs growth. We have studied the material morphology of GaAs grown on Ge/Si PS using atomic layer epitaxy (ALE) at the interface between Ge and GaAs. We present results on the reduction of APBs and dislocation density on (001) Ge/Si PS when ALE is applied. The ALE allows the reduction of the residual dislocation density in the GaAs layers to 105 cm−2 (one order of magnitude as compared to the dislocation density of the Ge/Si PS). The optical properties are improved (ie. increased photoluminescence intensity). Using ALE, light emitting diodes based on strained InGaAs/GaAs quantum well as well as of In(Ga)As quantum dots on an exactly oriented (001) Ge/Si pseudo-substrate were fabricated and characterized.

scholarly journals Structural and optical properties of Be-doped high-quality self-catalyzed GaAs nanowires

2021 ◽  
Author(s):  
Yubin Kang ◽  
Haolin li ◽  
Jilong Tang ◽  
Huimin Jia ◽  
Xiaobing Hou ◽  
...  
Keyword(s):  
Optical Properties ◽  
Structural And Optical Properties ◽  
High Quality ◽  
Gaas Nanowires

Phosphine-Free Synthesis of High Quality CdSe Nanocrystals and Their Optical Properties

2010 ◽  
Vol 26 (03) ◽  
pp. 691-694
Author(s):  
ZHAO Hui-Ling ◽  
◽  
◽  
SHEN Huai-Bin ◽  
WANG Hong-Zhe ◽  
...  
Keyword(s):  
Optical Properties ◽  
Cdse Nanocrystals ◽  
High Quality

scholarly journals Fluorine-Doped Tin Oxide Colloidal Nanocrystals

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 863 ◽  
Author(s):  
Owen Kendall ◽  
Pierce Wainer ◽  
Steven Barrow ◽  
Joel van Embden ◽  
Enrico Della Gaspera
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Surface Plasmon Resonance ◽  
Surface Plasmon ◽  
Tin Oxide ◽  
Near Infrared ◽  
Transparent Electrode ◽  
High Quality ◽  
Detailed Characterization

Fluorine-doped tin oxide (FTO) is one of the most studied and established materials for transparent electrode applications. However, the syntheses for FTO nanocrystals are currently very limited, especially for stable and well-dispersed colloids. Here, we present the synthesis and detailed characterization of FTO nanocrystals using a colloidal heat-up reaction. High-quality SnO2 quantum dots are synthesized with a tuneable fluorine amount up to ~10% atomic, and their structural, morphological and optical properties are fully characterized. These colloids show composition-dependent optical properties, including the rise of a dopant-induced surface plasmon resonance in the near infrared.

Optical properties of narrow high quality GaAs/AlGaAs quantum wells grown by MOVPE

1986 ◽  
Vol 2 (6) ◽  
pp. 501-505 ◽  
Author(s):  
M.-E. Pistol ◽  
S. Nilsson ◽  
P. Silverberg ◽  
L. Samuelson ◽  
M. Rask ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
High Quality

GaN On 6H-SiC – Structural And Optical Properties

1994 ◽  
Vol 339 ◽  
Author(s):  
C. Wetzel ◽  
D. Volm ◽  
B. K. Meyer ◽  
K. Pressel ◽  
S. Nilsson ◽  
...  
Keyword(s):  
Optical Properties ◽  
Transition Metal Ions ◽  
Substrate Material ◽  
X Ray Diffraction ◽  
High Quality ◽  
Paramagnetic Resonance ◽  
Lattice Constants ◽  
Donor Acceptor ◽  
Related Donor

ABSTRACTRecent progress in the growth of high quality 6H-SiC single crystals has led to an ideal substrate material for GaN epitaxial films. Nearly matching lattice constants of wurzite GaN to 6H-SiC in the hexagonal plane can reduce strain effects at the interface. We employed the sublimation sandwich method to grow single crystal layers at reasonable growth rates with free carrier concentrations of 2×1017 cm-3. Very sharp x-ray diffraction peaks of the GaN (0002) plane are obtained indicating the high quality of this system (Δ(2θ) < 0.1 degrees). These findings are directly reflected in the optical properties. The photoluminescence is dominated by a single sharp exciton line, impurity related donor acceptor transitions are seen with very weak intensities. However, at lower energies the internal luminescence transitions of the 3d transition metal ions Fe and V are observable. The incorporation of Fe is confirmed by electron paramagnetic resonance.

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