Temperature dependence of continuous wave threshold current for 2.3–2.6 μm InGaAsSb/AlGaAsSb separate confinement heterostructure quantum well semiconductor diode lasers

1999 ◽  
Vol 74 (20) ◽  
pp. 2990-2992 ◽  
Author(s):  
D. Garbuzov ◽  
M. Maiorov ◽  
H. Lee ◽  
V. Khalfin ◽  
R. Martinelli ◽  
...  
Keyword(s):  
Quantum Well ◽  
Temperature Dependence ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Threshold Current ◽  
Semiconductor Diode ◽  
Semiconductor Diode Lasers

Mode-locked semiconductor diode lasers

1980 ◽  
Vol 298 (1439) ◽  
pp. 257-266 ◽  
Keyword(s):  
Semiconductor Laser ◽  
Pulse Width ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Laser Diodes ◽  
Mode Locking ◽  
Semiconductor Diode ◽  
External Resonator ◽  
Semiconductor Diode Lasers ◽  
Semiconductor Laser Diodes

The reasoning that led to the first successful mode-locking of continuous wave (c.w.) semiconductor laser diodes is described. The theory of forced mode-locking, as modified for semiconductor laser diodes in an external resonator, is outlined. Experiments on GaAlAs and InGaAsP diodes are summarized. The shortest pulses to date are 16 ps f.w.h.m. Limitations on pulse width are discussed and ways of producing shorter pulses are suggested.

Modulation Properties of Self-Injected Quantum-Dot Semiconductor Diode Lasers

2013 ◽  
Vol 19 (4) ◽  
pp. 1900812-1900812 ◽  
Author(s):  
F. Grillot ◽  
Cheng Wang ◽  
N. A. Naderi ◽  
J. Even
Keyword(s):  
Quantum Dot ◽  
Diode Lasers ◽  
Semiconductor Diode ◽  
Semiconductor Diode Lasers

Peer Reviewed: Semiconductor Diode Lasers in Atomic Spectrometry

1996 ◽  
Vol 68 (11) ◽  
pp. 351A-356A ◽  
Author(s):  
Kay Niemax ◽  
Aleksandr Zybin ◽  
Christoph Schnürer-Patschan ◽  
Henning Groll
Keyword(s):  
Diode Lasers ◽  
Atomic Spectrometry ◽  
Semiconductor Diode ◽  
Semiconductor Diode Lasers

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

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