Time-resolved reflectivity characterization of polycrystalline low-temperature-grown GaAs

1999 ◽  
Vol 74 (17) ◽  
pp. 2462-2464 ◽  
Author(s):  
Jean-François Roux ◽  
Jean-Louis Coutaz ◽  
Arunas Krotkus
Keyword(s):  
Low Temperature ◽  
Time Resolved ◽  
Low Temperature Grown Gaas

Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements

1996 ◽  
Vol 35 (Part 1, No. 12A) ◽  
pp. 5955-5963 ◽  
Author(s):  
Hajime Abe ◽  
Hiroshi Harima ◽  
Shin-ichi Nakashima ◽  
Masahiko Tani ◽  
Kiyomi Sakai ◽  
...  
Keyword(s):  
Low Temperature ◽  
Raman Scattering ◽  
Time Resolved ◽  
Low Temperature Grown Gaas

Characterization of Femtosecond Low-Temperature-Grown GaAs Photoconductive Switch

2002 ◽  
Vol 19 (4) ◽  
pp. 557-559 ◽  
Author(s):  
Lin Wei-Zhu ◽  
Liu Zhi-Gang ◽  
Liao Rui ◽  
Zhang Hai-Chao ◽  
Guo Bing ◽  
...  
Keyword(s):  
Low Temperature ◽  
Photoconductive Switch ◽  
Low Temperature Grown Gaas

Variable energy positron beam characterization of defects in as-grown and annealed low temperature grown GaAs

1993 ◽  
Vol 22 (12) ◽  
pp. 1405-1408 ◽  
Author(s):  
M. T. Umlor ◽  
D. J. Keeble ◽  
P. W. Cooke ◽  
P. Asoka-Kumar ◽  
K. G. Lynn
Keyword(s):  
Low Temperature ◽  
Positron Beam ◽  
Beam Characterization ◽  
Low Temperature Grown Gaas ◽  
Variable Energy

Spectroscopic Ellipsometric Characterization of Low Temperature GaAs

1995 ◽  
Vol 378 ◽  
Author(s):  
X. Gao ◽  
P. G. Snyder ◽  
P. W. Yu ◽  
Y. Q. Zhang ◽  
Z. F. Peng
Keyword(s):  
Low Temperature ◽  
Red Shift ◽  
Strain Effect ◽  
Lorentz Oscillator ◽  
Ellipsometric Characterization ◽  
C 30 ◽  
Low Temperature Gaas ◽  
Low Temperature Grown Gaas ◽  
Lt Gaas

AbstractPseudodielectric functions of low temperature grown GaAs (LT GaAs) measured by spectroscopic ellipsometry are presented. The spectral range includes the El (2.92eV) and El+ΔAl (3.13eV) critical point structure of GaAs. A Lorentz-oscillator model was used to fit the dielectric function of LT GaAs for samples with nominal growth temperatures (Tg) varying from 200°C to 580°C. For Tg of 200°C, 30% and 19% broadenings and −0.01 leV and −0.007eV red shifts were found for the El and El+Δl structures respectively, compared with normal GaAs. The red shift can be explained in terms of a strain effect in the LT layer. In annealed LT GaAs the broadening decreased significantly and no red shift was found.

Low-temperature and time-resolved spectroscopic characterization of the LOV2 domain of Avena sativa phototropin 1

2004 ◽  
Author(s):  
Magdalena Gauden ◽  
Sean Crosson ◽  
I. H. M. van Stokkum ◽  
Rienk van Grondelle ◽  
Keith Moffat ◽  
...  
Keyword(s):  
Low Temperature ◽  
Avena Sativa ◽  
Spectroscopic Characterization ◽  
Time Resolved
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