Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes to GaN:Er on Si

1999 ◽  
Vol 74 (2) ◽  
pp. 182-184 ◽  
Author(s):  
M. Garter ◽  
J. Scofield ◽  
R. Birkhahn ◽  
A. J. Steckl
Keyword(s):  
Rare Earth ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Schottky Diodes

Thermal stability of indium-tin-oxide/n-GaAs Schottky diodes

1992 ◽  
Vol 28 (2) ◽  
pp. 142 ◽  
Author(s):  
Y.H. Aliyu ◽  
D.V. Morgan ◽  
R.W. Bunce
Keyword(s):  
Thermal Stability ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Schottky Diodes ◽  
Thermal Stability Of

scholarly journals Fabrications of Hetero-Junction Schottky Diodes by Electrodeposition of Nano-Structured CuInSe2 Materials Using Different Upper Electrodes

Coatings ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 266
Author(s):  
Jing Liu ◽  
Kuo-Wei Liu ◽  
Mau-Phon Houng ◽  
Cheng-Fu Yang
Keyword(s):  
Aluminum Oxide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Anodic Aluminum Oxide ◽  
Schottky Diodes ◽  
Electrodeposition Method ◽  
Anodic Aluminum ◽  
Junction Device ◽  
Current Voltage ◽  
Negative Electrodes

In this study, CuInSe2 (CIS) films (CIS-TFs) and nanorods (CIS-NRs) were successfully deposited on Mo/glass and p+-silicon (p+-Si) using an electrodeposition method. Anodic aluminum oxide (AAO) was used as the template when the CIS-NRs were deposited. Pt, indium tin oxide (ITO), and Ag were deposited as the upper electrodes using a sputtering method to form the hetero-junction devices of Pt/CIS-NRs/p+-Si, ITO/CIS-NRs/p+-Si, ITO/CIS-TF/Mo/glass, and Ag/CIS-NRs/p+-Si, respectively. When p+-Si was used as the substrate, Al was deposited on p+-Si to form negative electrodes for the devices of Pt/CIS-NRs/p+-Si, ITO/CIS-NRs/p+-Si, and Ag/CIS-NRs/p+-Si. The current–voltage properties of all the hetero-junction devices were measured and we found that the hetero-junction of ITO/CIS-NRs/p+-Si, ITO/CIS-TF/Mo/glass, and Ag/CIS-NRs/p+-Si devices revealed the properties of Schottky diodes but the hetero-junction device of Pt/CIS-NRs/p+-Si device did not. The reason for the cause of the differences between these hetero-junction devices was investigated for this study.

Fan-shaped mid-infrared chiral metamaterials based on indium tin oxide and their circular dichroism

2020 ◽  
Vol 13 (4) ◽  
pp. 722-727
Author(s):  
ZHU Ye-xin ◽  
◽  
◽  
LI Ya-nan ◽  
SHI Wei-jie ◽  
...  
Keyword(s):  
Circular Dichroism ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Mid Infrared ◽  
Chiral Metamaterials ◽  
Circular Dichroïsm

Indium tin oxide/GaAs photodiodes for millimetric-wave applications

1986 ◽  
Vol 22 (23) ◽  
pp. 1266 ◽  
Author(s):  
D.G. Parker ◽  
P.G. Say
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Millimetric Wave

Indium–tin oxide film electrode as catalytic amperometric sensor for hydrogen peroxide

The Analyst ◽  
1995 ◽  
Vol 120 (10) ◽  
pp. 2579-2583 ◽  
Author(s):  
Xiaohua Cai ◽  
Božidar Ogorevc ◽  
Gabrijela Tavčar ◽  
Joseph Wang
Keyword(s):  
Hydrogen Peroxide ◽  
Oxide Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Amperometric Sensor ◽  
Film Electrode

Plasma-assisted deposition of indium tin oxide thin films by sublimation using an anodic vacuum arc discharge

2021 ◽  
pp. 138731
Author(s):  
Bert Scheffel ◽  
Olaf Zywitzki ◽  
Thomas Preußner ◽  
Torsten Kopte
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Arc Discharge ◽  
Vacuum Arc ◽  
Oxide Thin Films
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