scholarly journals Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells

2014 ◽  
Vol 252 (5) ◽  
pp. 940-945 ◽  
Author(s):  
Hideaki Murotani ◽  
Yoichi Yamada ◽  
Yoshio Honda ◽  
Hiroshi Amano
Keyword(s):  
Quantum Wells ◽  
Density Dependence ◽  
Multiple Quantum Wells ◽  
Excitation Density ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Recombination Lifetimes

Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence

1998 ◽  
Vol 73 (25) ◽  
pp. 3689-3691 ◽  
Author(s):  
T. J. Schmidt ◽  
S. Bidnyk ◽  
Yong-Hoon Cho ◽  
A. J. Fischer ◽  
J. J. Song ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Density Dependence ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Excitation Density ◽  
Emission Characteristics ◽  
Multiple Quantum

scholarly journals Excitation density dependence of the photoluminescence from CdxHg1-xTe multiple quantum wells

2008 ◽  
Vol 100 (4) ◽  
pp. 042024 ◽  
Author(s):  
C R Tonheim ◽  
E Selvig ◽  
S Nicolas ◽  
A E Gunnæs ◽  
M Breivik ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Density Dependence ◽  
Multiple Quantum Wells ◽  
Excitation Density ◽  
Multiple Quantum

scholarly journals Well-width dependence of radiative and nonradiative recombination times in ZnO/Mg0.12Zn0.88O multiple quantum wells

2001 ◽  
Vol 90 (7) ◽  
pp. 3650-3652 ◽  
Author(s):  
C. H. Chia ◽  
T. Makino ◽  
Y. Segawa ◽  
M. Kawasaki ◽  
A. Ohtomo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Nonradiative Recombination

Temperature Dependence of Cathodoluminescence From InxGa1-xAs/GaAs Multiple Quantum Wells

1995 ◽  
Vol 379 ◽  
Author(s):  
K. Rammohan ◽  
D.H. Rich ◽  
A. Larsson
Keyword(s):  
Activation Energy ◽  
Quantum Wells ◽  
Temperature Dependence ◽  
Spatial Variations ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Misfit Dislocations ◽  
Nonradiative Recombination ◽  
Intensity Dependence ◽  
Thermally Activated

ABSTRACTThe temperature dependence of the cathodoluminescence (CL) originating from In0.21Ga0.79As/GaAs multiple quantum wells has been studied between 86 and 250 K. The CL intensity exhibits an Arrenhius-type dependence on temperature (T), characterized by two different activation energies. The spatial variations in activation energy caused by the presence of interfacial misfit dislocations is examined. The CL intensity dependence on temperature for T ≲ 150 K is controlled by thermally activated nonradiative recombination. For T ≳ 150 K the decrease in CL intensity is largely influenced by thermal re-emission of carriers out of the quantum wells.

Optical Transitions and Recombination Lifetimes in GaN and InGaN Epilayers, and InGaN/GaN and GaN/AlGaN Multiple Quantum Wells

1996 ◽  
Vol 449 ◽  
Author(s):  
M. Smith ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
A. Khan ◽  
Q. Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Chemical Vapor ◽  
Multiple Quantum Wells ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Optical Transitions ◽  
Time Resolved ◽  
Metal Organic ◽  
Recombination Lifetimes ◽  
Time Resolved Photoluminescence

ABSTRACTTime-resolved photoluminescence (PL) has been employed to study the optical transitions and their dynamical processes in GaN and InxGa1-xN epilayers, and GaN/GaN and GaN/ALxGa1-xN multiple quantum wells (MQW). We compare the results from both metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) grown samples. In addition, results are also compared with GaAs/ALxGa1-xAs MQW. It was found for all samples that the low temperature emission lines were dominated by radiative recombination transitions of either localized or free excitons, which demonstrates the high quality and purity of these III-nitride materials.

Temperature and density dependence of exciton lifetimes in GaAs/AlGaAs multiple quantum wells

1995 ◽  
Vol 27 (5) ◽  
pp. 387-393 ◽  
Author(s):  
Jang Hee Chu ◽  
Jung-Chul Seo ◽  
Eun-Joo Shin ◽  
Sung-Kyu Yu ◽  
Dongho Kim ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Density Dependence ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Amplification Path Length Dependence Studies of Stimulated Emission from Optically Pumped InGaN/GaN Multiple Quantum Wells

1998 ◽  
Vol 537 ◽  
Author(s):  
T.J. Schmidt ◽  
S. Bidnyk ◽  
Yong-Hoon Cho ◽  
A.J. Fischer ◽  
J.J. Song ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Chemical Vapor ◽  
High Energy ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Excitation Density ◽  
Multiple Quantum ◽  
Optically Pumped ◽  
Energy Peak ◽  
The Difference

AbstractOptically pumped stimulated emission (SE) from InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition has been systematically studied as a function of excitation length (Lexc). Two distinct SE peaks were observed from these structures: one that originates at 425 nm at 10 K (430 nm at 300 K) and another that originates at 434 nm at 10 K (438 nm at 300 K). The SE threshold for the high energy peak was observed to always be lower than that of the low energy peak, but the difference was found to decrease greatly with increasing Lexc. A detailed study of the emission intensity of these two SE peaks as a function of excitation density shows that the two peaks compete for gain in the MQW active region.

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