Excitation energy-dependent optical characteristics of InGaN/GaN multiple quantum wells

1998 ◽  
Vol 73 (22) ◽  
pp. 3181-3183 ◽  
Author(s):  
Yong-Hoon Cho ◽  
J. J. Song ◽  
S. Keller ◽  
U. K. Mishra ◽  
S. P. DenBaars
Keyword(s):  
Excitation Energy ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Optical Characteristics ◽  
Multiple Quantum ◽  
Energy Dependent

Optical characteristics of a-plane ZnO/Zn0.8Mg0.2O multiple quantum wells grown by pulsed laser deposition

2010 ◽  
Vol 108 (7) ◽  
pp. 073504 ◽  
Author(s):  
T. S. Ko ◽  
T. C. Lu ◽  
L. F. Zhuo ◽  
W. L. Wang ◽  
M. H. Liang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Multiple Quantum Wells ◽  
Optical Characteristics ◽  
Multiple Quantum

Structural and optical characteristics of InxGa1−xN/GaN multiple quantum wells with different In compositions

1999 ◽  
Vol 75 (17) ◽  
pp. 2545-2547 ◽  
Author(s):  
Yong-Hwan Kwon ◽  
G. H. Gainer ◽  
S. Bidnyk ◽  
Y. H. Cho ◽  
J. J. Song ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Optical Characteristics ◽  
Multiple Quantum

Optical characteristics of a-plane InGaN∕GaN multiple quantum wells with different well widths

2007 ◽  
Vol 90 (18) ◽  
pp. 181122 ◽  
Author(s):  
T. S. Ko ◽  
T. C. Lu ◽  
T. C. Wang ◽  
M. H. Lo ◽  
J. R. Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Optical Characteristics ◽  
Multiple Quantum

Optical Characteristics Of Mocvd-Grown Ingan/Gan Multiple Quantum Wells Investigated By Excitation Energy Dependent Pl And Ple Spectroscopy

1998 ◽  
Vol 512 ◽  
Author(s):  
Yong-Hoon Cho ◽  
J. J. Song ◽  
S. Keller ◽  
U. K. Mishra ◽  
S. P. DenBaars
Keyword(s):  
Excitation Energy ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Secondary Peak ◽  
Main Peak ◽  
Multiple Quantum ◽  
Excitation Energies ◽  
Capping Layer ◽  
Pl Emission ◽  
Excitation Conditions

ABSTRACTWe have systematically studied the optical properties of InGaN/GaN multiple quantum wells (MQWs) at 10 K under different excitation conditions using photoluminescence (PL) and PL excitation (PLE) spectroscopy. The MQWs were grown on 1.8-μm-thick GaN on c-plane sapphire films by metal-organic chemical vapor deposition. Structures consist of 12 MQWs with 3-nm-thick In0.2Ga0.8N wells, 4.5-nm-thick GaN barriers, and a 100-nm-thick A10.07Ga0.93N capping layer. We found that the PL emission consists of a strong main peak at 2.80 eV and a much weaker and broader secondary peak at ˜ 2.25 eV. We observed that both the peak position and the spectral width of the main peak vary with the excitation energy. The PL peak blueshifts and narrows when the excitation energies are varied from 3.81 eV (above the bandgap of the AlGaN capping layer) to 2.99 eV (below the bandgap of the GaN barrier layers). The intensity ratio of the main peak to the secondary peak also varied with excitation energy. The PLE studies, combined with the excitation dependent PL emission studies, reveal that the two observed emission peaks originate from different layers of the MQWs. In addition, we found that the InGaN-related spontaneous emission processes are strongly affected by different carrier generation conditions with further complications associated with compositional fluctuations and possible carrier localization. The differences in the observed emission processes under varying excitation conditions can be explained by considering the transfer of carriers between the different layers of the MQW structures.

scholarly journals Optical characteristics of 1.55μm GaInNAs multiple quantum wells

2004 ◽  
Vol 85 (18) ◽  
pp. 4013-4015 ◽  
Author(s):  
H. D. Sun ◽  
A. H. Clark ◽  
H. Y. Liu ◽  
M. Hopkinson ◽  
S. Calvez ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Optical Characteristics ◽  
Multiple Quantum
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